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1. 发明申请

US20180175103A1 IMAGING DEVICE, METHOD OF DRIVING IMAGING DEVICE, AND IMAGING SYSTEM 审中-公开
公开(公告)号：US20180175103A1
公开(公告)日：2018-06-21
申请号：US15824053
申请日：2017-11-28
申请人： CANON KABUSHIKI KAISHA
发明人： Tatsuya Ryoki , Daisuke Kobayashi , Tetsunobu Kochi
IPC分类号： H01L27/148 , H04N5/378 , H01L27/146
CPC分类号： H01L27/14812 , H01L27/14609 , H01L27/14643 , H04N5/378
摘要： An imaging device includes pixels each including a photoelectric converter generating charges, a holding portion holding charges transferred from the photoelectric converter, and an amplifier unit outputting a signal based on charges transferred from the holding portion. Each pixel outputs, to an output line, a signal based on charges generated by the photoelectric converter during an exposure period including a first period during which the photoelectric converter holds charges generated in the first period and a second period during which the photoelectric converter or the holding portion holds charges generated in the second period while the holding portion is holding charges generated in the first period, and resets the holding portion after outputting a signal based on charges held in the holding portion in the first period and before transferring charges generated in the first period from the photoelectric converter to the holding portion.

2. 发明授权

US09270905B2 Readout circuit, solid-state imaging apparatus, and method for driving readout circuit 有权
标题翻译：读出电路，固态成像装置和驱动读出电路的方法
公开(公告)号：US09270905B2
公开(公告)日：2016-02-23
申请号：US13919810
申请日：2013-06-17
申请人： CANON KABUSHIKI KAISHA
发明人： Masanori Ogura , Hideo Kobayashi , Tetsunobu Kochi
IPC分类号： H04N5/335 , H03F3/45 , H04N5/232 , H04N5/378
CPC分类号： H04N5/335 , H03F3/45179 , H03F2203/45101 , H04N5/23245 , H04N5/378
摘要： A readout circuit includes: an amplifier (408); and offset controllers (415 and 416) configured to set an output offset voltage of the amplifier, wherein the readout circuit operates in first and second modes, in the first mode, a first voltage, and thereafter a second voltage lower than the first voltage, are input into the amplifier, in the second mode, a third voltage, and thereafter a fourth voltage higher than the third voltage, are input into the amplifier, and the offset controller switches the output offset voltage of the amplifier, between the first and second modes.
摘要翻译：读出电路包括：放大器（408）; 和配置成设置放大器的输出偏移电压的偏移控制器（415和416），其中读出电路在第一模式中以第一模式和第二模式工作，第一电压，此后低于第一电压的第二电压，被输入到放大器中，在第二模式中，第三电压，然后高于第三电压的第四电压被输入到放大器中，并且偏移控制器在第一和第二电压之间切换放大器的输出偏移电压模式。

3. 发明授权

US09257479B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US09257479B2
公开(公告)日：2016-02-09
申请号：US14138277
申请日：2013-12-23
申请人： CANON KABUSHIKI KAISHA
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/146 , H01L27/148 , H01L31/0352
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.
摘要翻译：一种制造具有多个像素的有源像素传感器的方法，每个像素具有由第一导电类型的第一半导体区域和第二导电类型的第二半导体区域的一部分形成的光电二极管，以及转移晶体管用于从光电二极管传输电荷载体的步骤包括以下步骤：制备其上形成有第一导电类型的第一半导体区域的衬底，形成掩模以在衬底上形成第二半导体区域，使用掩模，并且在形成第二半导体区域之后形成转移晶体管的栅极。转移晶体管的栅极在平面图中与第二半导体区域重叠。

4. 发明授权

US10249678B2 Imaging device, method of driving imaging device, and imaging system 有权
公开(公告)号：US10249678B2
公开(公告)日：2019-04-02
申请号：US15824053
申请日：2017-11-28
申请人： CANON KABUSHIKI KAISHA
发明人： Tatsuya Ryoki , Daisuke Kobayashi , Tetsunobu Kochi
IPC分类号： H01L27/146 , H01L27/148 , H04N5/378
摘要： An imaging device includes pixels each including a photoelectric converter generating charges, a holding portion holding charges transferred from the photoelectric converter, and an amplifier unit outputting a signal based on charges transferred from the holding portion. Each pixel outputs, to an output line, a signal based on charges generated by the photoelectric converter during an exposure period including a first period during which the photoelectric converter holds charges generated in the first period and a second period during which the photoelectric converter or the holding portion holds charges generated in the second period while the holding portion is holding charges generated in the first period, and resets the holding portion after outputting a signal based on charges held in the holding portion in the first period and before transferring charges generated in the first period from the photoelectric converter to the holding portion.

5. 发明授权

US09136403B2 Semiconductor device with wirings of differing young's modulus and method for fabricating the same 有权
标题翻译：具有不同年龄模量的布线的半导体器件及其制造方法
公开(公告)号：US09136403B2
公开(公告)日：2015-09-15
申请号：US13830586
申请日：2013-03-14
申请人： CANON KABUSHIKI KAISHA
发明人： Masanori Ogura , Hideo Kobayashi , Tetsunobu Kochi , Masashi Kitani
IPC分类号： H01L31/02 , H01L23/532 , H01L27/146
CPC分类号： H01L31/02002 , H01L23/53214 , H01L23/53233 , H01L23/53271 , H01L27/14603 , H01L27/14636 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli.
摘要翻译：在包括沿一个方向排列的单元电池的半导体器件中，沿着一个方向的端部设置的布线具有高的杨氏模量。

6. 发明申请

US20130285189A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130285189A1
公开(公告)日：2013-10-31
申请号：US13830586
申请日：2013-03-14
申请人： CANON KABUSHIKI KAISHA
发明人： Masanori Ogura , Hideo Kobayashi , Tetsunobu Kochi , Masashi Kitani
IPC分类号： H01L31/02
CPC分类号： H01L31/02002 , H01L23/53214 , H01L23/53233 , H01L23/53271 , H01L27/14603 , H01L27/14636 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli.
摘要翻译：在包括沿一个方向排列的单元电池的半导体器件中，沿着一个方向的端部设置的布线具有高的杨氏模量。

7. 发明申请

US20140016007A1 READOUT CIRCUIT, SOLID-STATE IMAGING APPARATUS, AND METHOD FOR DRIVING READOUT CIRCUIT 有权
标题翻译：读出电路，固态成像装置和驱动读出电路的方法
公开(公告)号：US20140016007A1
公开(公告)日：2014-01-16
申请号：US13919810
申请日：2013-06-17
申请人： CANON KABUSHIKI KAISHA
发明人： Masanori Ogura , Hideo Kobayashi , Tetsunobu Kochi
IPC分类号： H04N5/335 , H03F3/45
CPC分类号： H04N5/335 , H03F3/45179 , H03F2203/45101 , H04N5/23245 , H04N5/378
摘要： A readout circuit includes: an amplifier (408); and offset controllers (415 and 416) configured to set an output offset voltage of the amplifier, wherein the readout circuit operates in first and second modes, in the first mode, a first voltage, and thereafter a second voltage lower than the first voltage, are input into the amplifier, in the second mode, a third voltage, and thereafter a fourth voltage higher than the third voltage, are input into the amplifier, and the offset controller switches the output offset voltage of the amplifier, between the first and second modes.
摘要翻译：读出电路包括：放大器（408）; 和配置成设置放大器的输出偏移电压的偏移控制器（415和416），其中读出电路在第一模式中以第一模式和第二模式工作，第一电压，此后低于第一电压的第二电压，被输入到放大器中，在第二模式中，第三电压，然后高于第三电压的第四电压被输入到放大器中，并且偏移控制器在第一和第二电压之间切换放大器的输出偏移电压模式。

8. 发明申请

US20130187199A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20130187199A1
公开(公告)日：2013-07-25
申请号：US13753682
申请日：2013-01-30
申请人： CANON KABUSHIKI KAISHA
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type forming a pn-junction with the first semiconductor region, and a third semiconductor region of the first conductive type disposed on the second semiconductor region. In addition, a transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region of the second conductivity type, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region, disposed under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置包括：具有第一导电类型的第一半导体区域的第一半导体区域和与第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元和第三半导体区域位于第二半导体区域上的第一导电类型的区域。另外，传输栅电极设置在绝缘膜上并将载体从第二半导体区转移到第二导电类型的第四半导体区，具有栅电极的放大MOS晶体管连接到第四半导体区，并且第二导电类型的第五半导体区域连续地设置在设置在栅电极下方的第二半导体区域上。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

9. 发明授权

US09967497B2 Imaging apparatus and driving method for imaging apparatus 有权
公开(公告)号：US09967497B2
公开(公告)日：2018-05-08
申请号：US14039183
申请日：2013-09-27
申请人： CANON KABUSHIKI KAISHA
发明人： Hideo Kobayashi , Tetsunobu Kochi , Masanori Ogura
IPC分类号： H01L27/00 , H04N5/378 , H04N5/357 , H04N5/369
CPC分类号： H04N5/378 , H04N5/357 , H04N5/3698
摘要： An aspect of the present disclosure is directed to an imaging apparatus capable of reducing fluctuation in voltage in a current supply line due to fluctuation in a current consumption amount generated when an output circuit shifts from a first state to a second state, and a method for driving the imaging apparatus.

10. 发明申请

US20160355008A1 SEMICONDUCTOR DEVICE, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE CARTRIDGE, AND LIQUID DISCHARGE APPARATUS 有权
标题翻译：半导体器件，液体放电头，液体放电盒和液体放电装置
公开(公告)号：US20160355008A1
公开(公告)日：2016-12-08
申请号：US15162690
申请日：2016-05-24
申请人： CANON KABUSHIKI KAISHA
发明人： Kazunari Fujii , Tetsunobu Kochi , Wataru Endo , Takaaki Yamaguchi
IPC分类号： B41J2/045 , H01L27/06
CPC分类号： B41J2/04541 , B41J2/04543 , B41J2/0455 , B41J2/0458 , H01L27/0629
摘要： A semiconductor device for a liquid discharge head is provided. The device includes first transistors configured to receive a first voltage at a first terminal and second transistors configured to receive a second voltage at a first terminal. The device further includes discharge elements configured to discharge a liquid. Each discharge element is connected between a second terminal of a first transistor and a second terminal of a second transistor. A first control circuit is configured to supply a first control signal for controlling a conductive state of the first transistors via a common signal. A stabilization circuit is configured to stabilize a voltage of at least one of the second terminal of the first transistor or the control terminal of the first transistor.
摘要翻译：提供了一种用于液体排出头的半导体器件。该器件包括被配置为在第一端子处接收第一电压的第一晶体管和被配置为在第一端子处接收第二电压的第二晶体管。该装置还包括被配置为排出液体的排出元件。每个放电元件连接在第一晶体管的第二端子和第二晶体管的第二端子之间。第一控制电路被配置为经由公共信号提供用于控制第一晶体管的导通状态的第一控制信号。稳定电路被配置为稳定第一晶体管的第二端子或第一晶体管的控制端子中的至少一个的电压。

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