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1. 发明公开

EP0545694A3 Image display device with reduced cell gap variation and method of manufacturing the same 失效
标题翻译：具有减少细胞间隙变化的图像显示装置及其制造方法
公开(公告)号：EP0545694A3
公开(公告)日：1993-10-27
申请号：EP92311015.9
申请日：1992-12-02
申请人： CANON KABUSHIKI KAISHA
发明人： Miyawaki, Mamoru , Kondo, Shigeki , Nakamura, Yoshio , Kouchi, Tetsunobu
IPC分类号： G02F1/136
CPC分类号： G02F1/13454 , G02F1/133512 , G02F2201/48 , G02F2202/105 , H01L27/1214 , H01L27/1266 , H01L2221/68363
摘要： Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing an electrode for applying a voltage to a liquid crystal on the other surface thereof. One major electrode portion of the transistor and the liquid crystal voltage applying electrode are connected to each other using an electrode via an opening. Also, the electrode for connecting the major electrode portion 3 to the liquid crystal voltage applying electrode is provided on the other surface of the insulating layer such that it shield the transistor from light.

2. 发明公开

EP0463741A3 Method of manufacturing a semiconductor memory device containing a capacitor 失效
标题翻译：包含电容器的半导体存储器件及其制造方法
公开(公告)号：EP0463741A3
公开(公告)日：1992-11-19
申请号：EP91304867.4
申请日：1991-05-29
申请人： CANON KABUSHIKI KAISHA
发明人： Inoue, Shunsuke , Sakashita, Yukihiko , Nakamura, Yoshio , Kikuchi, Shin , Yuzurihara, Hiroshi
IPC分类号： H01L27/108 , H01L21/82 , H01L29/92 , H01L21/90
CPC分类号： H01L27/10829 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film. The Al region can be grown selectively to produce freestanding mushroom-like structures without further pattering steps.

3. 发明公开

EP0274236A3 Photoelectric converting apparatus 失效
标题翻译：光电转换装置
公开(公告)号：EP0274236A3
公开(公告)日：1988-07-20
申请号：EP87310803
申请日：1987-12-09
申请人： CANON KABUSHIKI KAISHA
发明人： Nakamura, Yoshio , Sugawa, Shigetoshi
IPC分类号： H01L27/14
CPC分类号： H04N5/3591 , H01L27/14681 , H04N5/3692 , H04N5/374
摘要： A photoelectric converting cell has a control electrode region of a semiconductor transistor (S₁). The carriers generated in the control electrode region by the light excitation are accumulated, and the accumulation voltage generated by this accumulation is read out from one of the main electrode regions of the semiconductor transistor. The control electrode region is connected to an excess carrier eliminating circuit (D₁, Lrh, Ve) to perform the switching operation in dependence on the potential difference across the control electrode region.

4. 发明公开

EP0253678A2 Photoelectric conversion device 失效
标题翻译：光电转换装置
公开(公告)号：EP0253678A2
公开(公告)日：1988-01-20
申请号：EP87306360.6
申请日：1987-07-17
申请人： CANON KABUSHIKI KAISHA
发明人： Tanaka, Nobuyoshi , Nakamura, Yoshio , Sugawa, Shigetoshi , Ohzu, Hayao
IPC分类号： H01L27/14 , H04N3/15
CPC分类号： H01L27/14681 , H04N5/3692 , H04N5/374
摘要： A photoelectric conversion device includes a first main electrode region of a first conductivity type; a second main electrode region of a first conductivity type; a control electrode region of a second conductivity type opposite to the first conductivity type serving as an accumulation region for carriers induced by an electromagnetic wave; a first circuit for setting the control electrode region selectively at a constant potential and at a floating state; and a second circuit for setting the first main electrode region selectively at a low impedance state and at a floating state; whereby the first and second circuits control the carrier removal, accumulation and readout operations in accordance with the selection conditions by the first and second circuits.
摘要翻译：一种光电转换装置，包括：第一导电型的第一主电极区域; 第一导电类型的第二主电极区域; 与第一导电类型相反的第二导电类型的控制电极区域，用作由电磁波引起的载流子的累积区域; 第一电路，用于选择性地将所述控制电极区域设定为恒定电位和浮置状态; 以及第二电路，用于将所述第一主电极区域选择性地设置在低阻抗状态和浮置状态; 由此第一和第二电路根据第一和第二电路的选择条件来控制载体移除，累积和读出操作。

5. 发明授权

EP0275217B1 Photoelectric converting apparatus 失效
标题翻译：一种光电转换
公开(公告)号：EP0275217B1
公开(公告)日：1998-07-22
申请号：EP88300346.9
申请日：1988-01-15
申请人： CANON KABUSHIKI KAISHA
发明人： Sugawa, Shigetoshi , Tanaka, Nobuyoshi , Nakamura, Yoshio , Ueno, Isamu
IPC分类号： H01L27/146 , H04N3/15 , H04N5/217
CPC分类号： H01L27/14681 , H04N5/3692

6. 发明公开

EP0680087A3 Semiconductor devices utilising silicide reaction for manufacturing adaptable interconnections 失效
标题翻译：一种半导体器件，其利用以形状配合连接的硅化物反应。
公开(公告)号：EP0680087A3
公开(公告)日：1996-10-02
申请号：EP95302874.3
申请日：1995-04-27
申请人： CANON KABUSHIKI KAISHA , TADAHIRO OHMI
发明人： Ohmi, Tadahiro , Suzuki, Hiroshi, c/o Department of Electronics , Yamashita, Takeo , c/o Department of Electronics , Miyawaki, Mamoru , Nakamura, Yoshio
IPC分类号： H01L23/525
CPC分类号： H01L27/112 , G11C17/16 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device provided with a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the pair of conductors is made of a metal, and the semiconductor layer comprises an amorphous silicon that can form a silicide region with the metal as reacting at a reaction rate of not less than 10 m/sec. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is made of a metal silicide-reacting with the amorphous silicon, and in that the silicide region formed is conic. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is formed of a metal silicide-reacting with the amorphous silicon, and in that a film-formed surface is produced without being exposed to an oxide atmosphere, between a step of forming the amorphus silicon and a step of forming the metal.

7. 发明公开

EP0275217A3 Photoelectric converting apparatus 失效
标题翻译：光电转换装置
公开(公告)号：EP0275217A3
公开(公告)日：1989-12-13
申请号：EP88300346.9
申请日：1988-01-15
申请人： CANON KABUSHIKI KAISHA
发明人： Sugawa, Shigetoshi , Tanaka, Nobuyoshi , Nakamura, Yoshio , Ueno, Isamu
IPC分类号： H01L27/14 , H04N3/15 , H04N5/217
CPC分类号： H01L27/14681 , H04N5/3692
摘要： In a photoelectric converting apparatus having a plurality of photosensors (S d , S f , S₁...S n ) divided into an opening portion (S₁-S n ) and a light shielding portion (S d & S f ), a carrier eliminating structure (S f ) to block the inflow of photosignals from the opening portion is provided between the photosensor in the light shielding portion (S d ) and the photosensors in the opening portion (S₁). The photosensor consists of a photoelectric converting transistor having a control electrode region (103) to accumulate the carriers generated by the light excitation. The carrier eliminating structure has the same constitution as that of the photosensor. The potential of the control electrode region (103) is fixed to a constant potential so as to attract the carriers from the opening portion.
摘要翻译：在具有分成开口部分（S 1 -S n）和光屏蔽部分（S d＆S f）的多个光敏元件（S d，S f，S 1 ...... Sn）的光电转换装置中，载波消除结构（Sf）到在光屏蔽部分（Sd）中的光电传感器和开口部分（S 1）中的光电传感器之间提供阻止来自开口部分的光信号流入。光电传感器由具有控制电极区（103）的光电转换晶体管组成，以累积由光激励产生的载流子。载体消除结构具有与光电传感器相同的构造。控制电极区域（103）的电位被固定为恒定的电位，以从开口部分吸引载流子。

8. 发明公开

EP0274236A2 Photoelectric converting apparatus 失效
标题翻译： Photoelektrischer Wandler。
公开(公告)号：EP0274236A2
公开(公告)日：1988-07-13
申请号：EP87310803.9
申请日：1987-12-09
申请人： CANON KABUSHIKI KAISHA
发明人： Nakamura, Yoshio , Sugawa, Shigetoshi
IPC分类号： H01L27/14
CPC分类号： H04N5/3591 , H01L27/14681 , H04N5/3692 , H04N5/374
摘要： A photoelectric converting cell has a control electrode region of a semiconductor transistor (S₁). The carriers generated in the control electrode region by the light excitation are accumulated, and the accumulation voltage generated by this accumulation is read out from one of the main electrode regions of the semiconductor transistor. The control electrode region is connected to an excess carrier eliminating circuit (D₁, Lrh, Ve) to perform the switching operation in dependence on the potential difference across the control electrode region.
摘要翻译：光电转换单元具有半导体晶体管的控制电极区域（S1）。通过光激励在控制电极区域中产生的载流子被累积，并且从该半导体晶体管的主电极区域之一读出由该累积产生的累积电压。控制电极区域与过量的载波消除电路（D1，Lrh，Ve）连接，根据控制电极区域的电位差进行切换动作。

9. 发明授权

EP0545694B1 Liquid crystal display device with reduced cell gap variation and method of manufacturing the same 失效
标题翻译：用其制备降低的单元间距的变化和处理的液晶显示
公开(公告)号：EP0545694B1
公开(公告)日：1998-05-06
申请号：EP92311015.9
申请日：1992-12-02
申请人： CANON KABUSHIKI KAISHA
发明人： Miyawaki, Mamoru , Kondo, Shigeki , Nakamura, Yoshio , Kouchi, Tetsunobu
IPC分类号： G02F1/136
CPC分类号： G02F1/13454 , G02F1/133512 , G02F2201/48 , G02F2202/105 , H01L27/1214 , H01L27/1266 , H01L2221/68363
摘要： Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing an electrode for applying a voltage to a liquid crystal on the other surface thereof. One major electrode portion of the transistor and the liquid crystal voltage applying electrode are connected to each other using an electrode via an opening. Also, the electrode for connecting the major electrode portion 3 to the liquid crystal voltage applying electrode is provided on the other surface of the insulating layer such that it shield the transistor from light.

10. 发明授权

EP0463741B1 Method of manufacturing a semiconductor memory device containing a capacitor 失效
标题翻译：一种用于具有半导体存储器件的电容器制造方法
公开(公告)号：EP0463741B1
公开(公告)日：1997-07-23
申请号：EP91304867.4
申请日：1991-05-29
申请人： CANON KABUSHIKI KAISHA
发明人： Inoue, Shunsuke , Sakashita, Yukihiko , Nakamura, Yoshio , Kikuchi, Shin , Yuzurihara, Hiroshi
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10829 , H01L2924/0002 , H01L2924/00

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