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1. 发明申请

WO2010086594A1 METHOD OF FORMING SOURCE AND DRAIN ELECTRODES OF ORGANIC THIN FILM TRANSISTORS BY ELECTROLESS PLATING 审中-公开
标题翻译：通过电镀法形成有机薄膜晶体管的源极和漏极电极的方法
公开(公告)号：WO2010086594A1
公开(公告)日：2010-08-05
申请号：PCT/GB2010/000120
申请日：2010-01-27
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , BURROUGHES, Jeremy , CARTER, Julian , WHITING, Gregory , HALLS, Jonathan, James, Michael , WEBER, Karl , WHITING, Gregory
发明人： BURROUGHES, Jeremy , CARTER, Julian , WHITING, Gregory , HALLS, Jonathan, James, Michael , WEBER, Karl , WHITING, Gregory
IPC分类号： H01L51/10 , H01L51/05
CPC分类号： H01L51/0021 , H01L51/0003 , H01L51/002 , H01L51/0022 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode over a substrate using a solution processing technique; forming a work function modifying layer over the source and drain electrodes using a solution processing technique; and depositing an organic semi-conductive material in a channel region between the source and drain electrode using a solution processing technique.
摘要翻译：一种制造有机薄膜晶体管的方法，所述方法包括：使用溶液处理技术在源极和漏极上沉积衬底; 使用溶液处理技术在所述源极和漏极上形成功函数修饰层; 以及使用溶液处理技术将有机半导体材料沉积在所述源极和漏极之间的沟道区域中。

2. 发明申请

WO2009068869A1 ORGANIC THIN FILM TRANSISTORS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：WO2009068869A1
公开(公告)日：2009-06-04
申请号：PCT/GB2008/003941
申请日：2008-11-27
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , WHITING, Gregory , HALLS, Jonathan , BURROUGHES, Jeremy , MURPHY, Craig
发明人： WHITING, Gregory , HALLS, Jonathan , BURROUGHES, Jeremy , MURPHY, Craig
IPC分类号： H01L51/10
CPC分类号： H01L51/105 , H01L51/002 , H01L51/0036 , H01L51/0039 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor, and a method of making the same, comprising a source (2) and drain (4) electrode and organic semi-conductive material (8) disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer (14) of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3eV relative to a saturated calomel electrode in acetonitrile.
摘要翻译：一种有机薄膜晶体管及其制造方法，包括源极（2）和漏极（4）电极以及设置在沟道区域内的有机半导体材料（8），其中源极和漏极具有在其上设置薄的自组装层（14），其包含掺杂剂部分，用于通过接受电子来化学掺杂有机半导体材料，所述掺杂剂部分相对于饱和甘汞电极具有至少0.3eV的氧化还原电位在乙腈中。

3. 发明申请

WO2009098477A1 METHOD OF FABRICATING TOP GATE ORGANIC SEMICONDUCTOR TRANSISTORS 审中-公开
标题翻译：制造顶栅有机半导体晶体管的方法
公开(公告)号：WO2009098477A1
公开(公告)日：2009-08-13
申请号：PCT/GB2009/000342
申请日：2009-02-06
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , BURROUGHES, Jeremy , WHITING, Gregory , HALLS, Jonathan
发明人： BURROUGHES, Jeremy , WHITING, Gregory , HALLS, Jonathan
IPC分类号： H01L51/05 , H01L51/00
CPC分类号： H01L51/0541 , H01L27/283 , H01L51/0017
摘要： The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.
摘要翻译：本发明提供一种制造顶栅有机半导体晶体管的方法，包括：提供衬底; 在所述衬底上沉积源极和漏极; 将有机半导体材料沉积在源电极和漏电极之间的沟道中以及在源电极和漏电极的至少一部分上方; 在所述有机半导体材料上沉积电介质材料; 在沟道中的电介质材料和有机半导体材料上沉积栅电极; 去除介电材料和有机半导体材料的一部分，其中栅极用作掩模以在去除步骤期间屏蔽下面的有机半导体材料和电介质材料。

4. 发明申请

WO2008122774A1 ORGANIC THIN FILM TRANSISTORS 审中-公开
标题翻译：有机薄膜晶体管
公开(公告)号：WO2008122774A1
公开(公告)日：2008-10-16
申请号：PCT/GB2008/001183
申请日：2008-04-03
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , HALLS, Jonathan , WHITING, Gregory
发明人： HALLS, Jonathan , WHITING, Gregory
IPC分类号： H01L51/05
CPC分类号： H01L51/052 , H01L51/0018 , H01L51/0541 , H01L51/0545
摘要： A method of forming an organic thin film transistor comprising: providing a structure comprising source (2) and drain (4) electrodes with a channel region therebetween, a gate electrode (1), and a dielectric layer (10) disposed between the source (2) and drain (4) electrodes and the gate electrode (1); and patterning the dielectric layer (10) using the source (2) and drain (4) electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.
摘要翻译：一种形成有机薄膜晶体管的方法，包括：提供包括源极（2）和漏极（4）电极的结构，其间具有沟道区，栅电极（1）和介于电介质层（10）之间的电介质层（10） 2）和漏极（4）电极和栅电极（1）; 以及使用所述源极（2）和所述漏极（4）电极作为掩模对所述介电层（10）进行构图，以在所述沟道区域中形成比所述沟道区域相邻的介电材料区域更薄的电介质材料区域。

5. 发明申请

WO2009077742A1 ELECTRONIC DEVICES AND METHODS OF MAKING THE SAME USING SOLUTION PROCESSING TECHNIQUES 审中-公开
标题翻译：电子设备及其使用解决方案处理技术制备相同方法
公开(公告)号：WO2009077742A1
公开(公告)日：2009-06-25
申请号：PCT/GB2008/004141
申请日：2008-12-17
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , HALLS, Jonathan , WHITING, Gregory
发明人： HALLS, Jonathan , WHITING, Gregory
IPC分类号： H01L51/40
CPC分类号： H01L51/0012 , H01L51/0541 , H01L51/0545 , H01L51/56
摘要： A method of manufacturing an electronic device, the method comprising: providing a substrate (200); forming a patterned layer of removable material (202) on the substrate; depositing, using an indiscriminate deposition method, a layer of a surface energy modifying material (204) over the substrate comprising the patterned layer of removable material; removing the removable material from the substrate thereby forming a patterned surface of the substrate with surface energy modifying material in those areas not previously covered by the removable material and no surface energy modifying material in those areas previously covered by the removable material; and depositing one or more active components (206, 208) from solution on the patterned surface of the substrate using an indiscriminate deposition technique whereby a patterned layer of the one or more active components is formed based on the pattern of surface energy modifying material on the substrate
摘要翻译：一种制造电子器件的方法，所述方法包括：提供衬底（200）; 在所述衬底上形成可移除材料（202）的图案化层; 使用不加选择的沉积方法沉积在包含可移除材料的图案化层的衬底上的表面能改性材料层（204）; 从衬底移除可移除材料，从而在先前未被可除去材料覆盖的那些区域中形成具有表面能改性材料的衬底的图案化表面，并且在先前被可除去材料覆盖的那些区域中没有表面能改变材料; 以及使用不加选择的沉积技术将溶液中的溶液中的一种或多种活性组分（206,208）沉积在所述图案化的表面上，由此基于所述表面能改变材料的图案形成所述一种或多种活性组分的图案化层基质

6. 发明申请

WO2008025989A2 ORGANIC ELECTRONIC DEVICE 审中-公开
标题翻译：有机电子器件
公开(公告)号：WO2008025989A2
公开(公告)日：2008-03-06
申请号：PCT/GB2007/003283
申请日：2007-08-30
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LIMITED , WHITING, Gregory , SMITH, Euan
发明人： WHITING, Gregory , SMITH, Euan
IPC分类号： H01L51/10
CPC分类号： H01L51/057 , H01L27/283 , H01L27/3244 , H01L51/0036
摘要： This invention generally relates to organic electronic devices and to methods for their fabrication. More particularly we will describe organic thin film transistor (TFT) structures and their fabrication. An organic electronic device, the device comprising: a substrate supporting a first electrode; a spacer structure over said substrate; a second electrode over said spacer structure and at a height above said first electrode; and a layer of organic semiconducting material over said first and second electrodes to provide a conducting channel between said first and second electrodes; and wherein a majority of said first electrode is laterally positioned to one side of said channel and a majority of said second electrode is laterally positioned to the other side of said channel.
摘要翻译：本发明一般涉及有机电子器件及其制造方法。更具体地说，我们将描述有机薄膜晶体管（TFT）结构及其制造。一种有机电子器件，该器件包括：支撑第一电极的衬底; 在所述衬底上的间隔物结构; 在所述隔离物结构上并且在所述第一电极上方的高度处的第二电极; 和在所述第一和第二电极上的一层有机半导体材料，以在所述第一和第二电极之间提供导电通道; 并且其中大部分所述第一电极横向地位于所述沟道的一侧，并且大部分所述第二电极横向位于所述沟道的另一侧。

7. 发明申请

WO2009000683A1 ORGANIC THIN FILM TRANSISTORS, ORGANIC LIGHT-EMISSIVE DEVICES AND ORGANIC LIGHT-EMISSIVE DISPLAYS 审中-公开
标题翻译：有机薄膜晶体管，有机发光器件和有机发光显示器
公开(公告)号：WO2009000683A1
公开(公告)日：2008-12-31
申请号：PCT/EP2008/057517
申请日：2008-06-13
申请人： CAMBRIDGE DISPLAY TECHNOLOGY LTD , PANASONIC CORPORATION , HOTTA, Sadayoshi , HALLS, Jonathan , WHITING, Gregory
发明人： HOTTA, Sadayoshi , HALLS, Jonathan , WHITING, Gregory
IPC分类号： H01L51/10
CPC分类号： H01L51/0545 , H01L51/0005 , H01L51/105
摘要： A method of manufacturing an organic thin film transistor, the method comprising: depositing a source (2) and drain (4) electrode; forming a thin self-assembled layer (14) of material on the source and drain electrodes, the thin self-assembled layer of material comprising a dopant moiety for chemically doping an organic semi-conductive material by accepting or donating charge and a separate attachment moiety bonded to the dopant moiety and selectively bonded to the source and drain electrodes, and depositing a solution comprising a solvent and an organic semi- conductive material (8) in a channel region between the source and drain electrode.
摘要翻译：一种制造有机薄膜晶体管的方法，所述方法包括：沉积源极（2）和漏极（4）电极; 在源电极和漏电极上形成薄的材料自组装层（14），薄的自组装材料层包括掺杂剂部分，用于通过接受或提供电荷和单独的附着部分化学掺杂有机半导体材料键合到掺杂剂部分并且选择性地键合到源极和漏极，以及在源极和漏极之间的沟道区域中沉积包含溶剂和有机半导体材料（8）的溶液。

8. 发明公开

EP2059957A2 ORGANIC ELECTRONIC DEVICE 有权
标题翻译：有机电子器件
公开(公告)号：EP2059957A2
公开(公告)日：2009-05-20
申请号：EP07804092.0
申请日：2007-08-30
申请人： Cambridge Display Technology Limited
发明人： WHITING, Gregory , SMITH, Euan
IPC分类号： H01L51/10
CPC分类号： H01L51/057 , H01L27/283 , H01L27/3244 , H01L51/0036
摘要： This invention generally relates to organic electronic devices and to methods for their fabrication. More particularly we will describe organic thin film transistor (TFT) structures and their fabrication. An organic electronic device, the device comprising: a substrate supporting a first electrode; a spacer structure over said substrate; a second electrode over said spacer structure and at a height above said first electrode; and a layer of organic semiconducting material over said first and second electrodes to provide a conducting channel between said first and second electrodes; and wherein a majority of said first electrode is laterally positioned to one side of said channel and a majority of said second electrode is laterally positioned to the other side of said channel.
摘要翻译：本发明一般涉及有机电子器件及其制造方法。更具体地说，我们将描述有机薄膜晶体管（TFT）结构及其制造。一种有机电子器件，该器件包括：支撑第一电极的衬底; 在所述衬底上的间隔物结构; 在所述隔离物结构上并且在所述第一电极上方的高度处的第二电极; 和在所述第一和第二电极上的一层有机半导体材料，以在所述第一和第二电极之间提供导电通道; 并且其中大部分所述第一电极横向地位于所述沟道的一侧，并且大部分所述第二电极横向位于所述沟道的另一侧。

9. 发明授权

EP2132798B1 ORGANIC THIN FILM TRANSISTORS 有权
标题翻译：有机薄膜晶体管
公开(公告)号：EP2132798B1
公开(公告)日：2012-06-20
申请号：EP08736884.1
申请日：2008-04-03
申请人： Cambridge Display Technology Limited
发明人： HALLS, Jonathan , WHITING, Gregory
IPC分类号： H01L51/05
CPC分类号： H01L51/052 , H01L51/0018 , H01L51/0541 , H01L51/0545
摘要： A method of forming an organic thin film transistor comprising: providing a structure comprising source (2) and drain (4) electrodes with a channel region therebetween, a gate electrode (1), and a dielectric layer (10) disposed between the source (2) and drain (4) electrodes and the gate electrode (1); and patterning the dielectric layer (10) using the source (2) and drain (4) electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

10. 发明公开

EP2132798A1 ORGANIC THIN FILM TRANSISTORS 有权
标题翻译：有机薄膜晶体管
公开(公告)号：EP2132798A1
公开(公告)日：2009-12-16
申请号：EP08736884.1
申请日：2008-04-03
申请人： Cambridge Display Technology Limited
发明人： HALLS, Jonathan , WHITING, Gregory
IPC分类号： H01L51/05
CPC分类号： H01L51/052 , H01L51/0018 , H01L51/0541 , H01L51/0545
摘要： A method of forming an organic thin film transistor comprising: providing a structure comprising source (2) and drain (4) electrodes with a channel region therebetween, a gate electrode (1), and a dielectric layer (10) disposed between the source (2) and drain (4) electrodes and the gate electrode (1); and patterning the dielectric layer (10) using the source (2) and drain (4) electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

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