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1. 发明申请

WO2009114446A2 A SOLAR CELL AND FABRICATION METHOD USING CRYSTALLINE SILICON BASED ON LOWER GRADE FEEDSTOCK MATERIALS 审中-公开
标题翻译：一种基于较低级材料的晶体硅太阳能电池和制造方法
公开(公告)号：WO2009114446A2
公开(公告)日：2009-09-17
申请号：PCT/US2009036469
申请日：2009-03-09
申请人： CALISOLAR INC , OUNADJELA KAMEL , RAKOTONIAINA JEAN PATRICE , KAES MARTIN , ZICKERMANN DIRK , BLOSSE ALAIN , ZERGA ABDELLATIF , HEUER MATTHIAS , KIRSCHT FRITZ
发明人： OUNADJELA KAMEL , RAKOTONIAINA JEAN PATRICE , KAES MARTIN , ZICKERMANN DIRK , BLOSSE ALAIN , ZERGA ABDELLATIF , HEUER MATTHIAS , KIRSCHT FRITZ
IPC分类号： H01L31/00 , H01L31/042
CPC分类号： C23C18/1692 , C23C18/1603 , C23C18/1605 , C23C18/1653 , C23C18/32 , C25D7/12 , H01L31/02168 , H01L31/02245 , H01L31/0236 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti- reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form back surface field temperatures sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the coating. The process may anneal the low contact resistance metal layer to form n- doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,
摘要翻译：从升级的冶金级硅形成太阳能电池装置，其已经接收了至少一个缺陷工程过程并且包括低接触电阻的电路径。在发射极层上形成抗反射涂层，在体硅衬底的后表面上形成背面触点。该光伏器件可以被烧制以形成足够低的背表面场温度，以避免先前的缺陷工程过程的逆转。该方法在涂层的开口上进一步形成抗反射涂层中的开口和低接触电阻金属层，例如镍层。该工艺可以使低接触电阻金属层退火以形成n掺杂部分并且完成到n掺杂层的导电路径。这种低温金属化（例如，<700℃）支持使用UMG硅用于太阳能装置形成，而不会改变早期的缺陷工程过程。

2. 发明申请

WO2010005736A3 GERMANIUM-ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS 审中-公开
标题翻译：富含锗的硅材料用于制备太阳能电池
公开(公告)号：WO2010005736A3
公开(公告)日：2010-03-04
申请号：PCT/US2009047539
申请日：2009-06-16
申请人： CALISOLAR INC , KIRSCHT FRITZ , ABROSIMOVA VERA , HEUER MATTHIAS , JOUINI ANIS , LINKE DIETER , KAES MARTIN , RAKOTONIAINA JEAN PATRICE , OUNADJELA KAMEL
发明人： KIRSCHT FRITZ , ABROSIMOVA VERA , HEUER MATTHIAS , JOUINI ANIS , LINKE DIETER , KAES MARTIN , RAKOTONIAINA JEAN PATRICE , OUNADJELA KAMEL
IPC分类号： H01L31/00
CPC分类号： C30B29/06 , C30B11/00 , C30B11/04 , C30B11/08 , C30B13/00 , C30B13/08 , C30B13/10 , C30B15/00 , C30B15/02 , C30B15/04 , C30B29/52 , H01L31/028 , Y02E10/547 , Y10T117/1024 , Y10T117/1068
摘要： Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.
摘要翻译：描述了使用各种等级的硅原料形成硅锭和晶体的技术。共同的特征是向熔体添加预定量的锗，并执行结晶以将锗掺入相应晶体硅材料的硅晶格中。这种掺入的锗导致各个硅材料特性的改进，主要是材料强度的增加。这导致在太阳能电池制造中应用这些材料以及从这些太阳能电池制造模块时产生积极效果。锗浓度在（50-200）ppmw范围内的硅材料表现出增加的材料强度，其中最佳实际范围取决于所产生的材料质量。

3. 发明申请

WO2011056200A3 POLARIZATION RESISTANT SOLAR CELL WITH OXYGEN RICH INTERFACE 审中-公开
标题翻译：具有富含界面的耐极化太阳能电池
公开(公告)号：WO2011056200A3
公开(公告)日：2011-08-11
申请号：PCT/US2010002844
申请日：2010-10-27
申请人： CALISOLAR INC , PHAN BILL , ZHANG RENHUA , GORMAN JOHN , SIDELKHEIR OMAR , RAKOTONIAINA JEAN PATRICE , BLOSSE ALAIN PAUL , KAES MARTIN
发明人： PHAN BILL , ZHANG RENHUA , GORMAN JOHN , SIDELKHEIR OMAR , RAKOTONIAINA JEAN PATRICE , BLOSSE ALAIN PAUL , KAES MARTIN
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A polarization resistant solar cell using an oxygen-rich interface layer (209) is provided. The oxygen-rich interface layer may be comprised of SiOxNy, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer (601) may be interposed between the solar cell and the SiOxNy graded dielectric layer. The graded SiOxNy dielectric layer may be replaced with a non-graded SiOxNy dielectric layer and a SiN AR coating (703).
摘要翻译：提供了使用富氧界面层（209）的耐极化太阳能电池。富氧界面层可以由SiO x N y组成，其可以具有在太阳能电池附近的富含氧和太阳能电池远端富氮之间变化的分级分布。氧化硅钝化层（601）可以介于太阳能电池和SiO x N y梯度电介质层之间。分级的SiO x N y介电层可以用非梯度的SiO x N y介电层和SiN-AR涂层（703）代替。

4. 发明专利

BRPI0910387A2 célula dolar e método de fabricação usando silício cristalino baseado em matérias-primas de grau inferior 未知
公开(公告)号：BRPI0910387A2
公开(公告)日：2015-10-06
申请号：BRPI0910387
申请日：2009-03-09
申请人： CALISOLAR INC
发明人： ZERGA ABDELLATIF , BLOSSE ALAIN , ZICKERMANN DIRK , KIRSCHT FRITZ , RAKOTONIAINA JEAN PATRICE , OUNADJELA KAMEL , KAES MARTIN , HEUER MATTHIAS
IPC分类号： H01L31/00

5. 发明专利

ES2383928T3 Procedimiento y sistema para formar un lingote de silicio usando una materia prima de silicio de bajo grado 未知
公开(公告)号：ES2383928T3
公开(公告)日：2012-06-27
申请号：ES08796655
申请日：2008-07-25
申请人： CALISOLAR INC
发明人： KIRSCHT FRITZ , HEUER MATTHIAS , ABROSIMOVA VERA , LINKE DIETER , RAKOTONIAINA JEAN PATRICE , OUNADJELA KAMEL
IPC分类号： C30B29/06 , C30B11/00
摘要： Un procedimiento para formar un lingote de silicio usando una materia prima de silicio de bajo grado, comprendiendo el lingote de silicio un silicio de mayor grado que la materia prima de silicio de bajo grado, que comprende las etapas de: formar en un dispositivo de crisol (112), (142), (170) un silicio fundido a partir de una materia prima de silicio de bajo grado (34), (52), (84); realizar una solidificación direccional del silicio fundido para formar un lingote de silicio en el dispositivo de crisol, formando la solidificación direccional una cantidad generalmente solidificada de silicio (116) y una cantidad generalmente fundida de silicio (118), aumentando la solidificación direccional la altura de la cantidad combinada solidificada y fundida de silicio (102); retirar del dispositivo de crisol al menos una porción de la cantidad generalmente fundida de silicio mientras que se conserva en el dispositivo de crisol la cantidad generalmente solidificada de silicio (104), en el que dicha retirada comprende que fluya la al menos una porción de la cantidad generalmente fundida de silicio a través de un paso (132) (150) (182) asociado con dicho dispositivo de crisol, en el que el aumento de la altura permite que la al menos una porción de la cantidad generalmente fundida de silicio (118) alcance la altura del paso; y controlar dicha solidificación direccional de dicha cantidad generalmente solidificada de silicio para formar un lingote de silicio (36) (108) que posee un grado de silicio generalmente superior que dicha materia prima de silicio de bajo grado.

6. 发明专利

BR112012009877A2 "célula solar resistente à polarização com interface rica em oxigênio" 未知
公开(公告)号：BR112012009877A2
公开(公告)日：2016-08-09
申请号：BR112012009877
申请日：2010-10-27
申请人： CALISOLAR INC
发明人： BLOSSE ALAIN PAUL , PHAN BILL , RAKOTONIAINA JEAN PATRICE , GORMAN JOHN , KAES MARTIN , SIDELKHEIR OMAR , ZHANG RENHUA
IPC分类号： H01L31/0216 , H01L31/18
摘要： "célula solar resistente à polarização com interface rica em oxigênio" trata-se de uma célula solar resistente à polarização que usa uma camada de interface rica em oxigênio. a camada de interface rica em oxigênio pode ser compreendida de sioxny, que pode ter um perfil graduado que varia entre próximo à célula solar rica em oxigênio e distal à célula solar rica em nitrogênio. uma camada de passivação de óxido de silício pode ser interposta entre a célula solar e a camada dielétrica graduada de sioxny. a camada dielétrica graduadade sioxny pode ser substituída por uma camada dielétrica não graduada de sioxny e um revestimento ar de sin.

7. 发明专利

CA2718012A1 A SOLAR CELL AND FABRICATION METHOD USING CRYSTALLINE SILICON BASED ON LOWER GRADE FEEDSTOCK MATERIALS 未知
公开(公告)号：CA2718012A1
公开(公告)日：2009-09-17
申请号：CA2718012
申请日：2009-03-09
申请人： CALISOLAR INC
发明人： OUNADJELA KAMEL , RAKOTONIAINA JEAN PATRICE , KAES MARTIN , ZICKERMANN DIRK , BLOSSE ALAIN , ZERGA ABDELLATIF , HEUER MATTHIAS , KIRSCHT FRITZ
IPC分类号： H01L31/00 , H01L31/042
摘要： Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti- reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form back surface field temperatures sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the coating. The process may anneal the low contact resistance metal layer to form n- doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,

8. 发明专利

AU2009223574A1 A solar cell and fabrication method using crystalline silicon based on lower grade feedstock materials 未知
公开(公告)号：AU2009223574A1
公开(公告)日：2009-09-17
申请号：AU2009223574
申请日：2009-03-09
申请人： CALISOLAR INC
发明人： KAES MARTIN , OUNADJELA KAMEL , HEUER MATTHIAS , RAKOTONIAINA JEAN PATRICE , BLOSSE ALAIN , ZICKERMANN DIRK , ZERGA ABDELLATIF , KIRSCHT FRITZ
IPC分类号： H01L31/00
摘要： Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti-reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form a back surface field at a temperature sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the anti-reflective coating. The process may anneal the low contact resistance metal layer to form n-doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,

9. 发明公开

EP2173660A4 METHOD AND SYSTEM FOR CONTROLLING RESISTIVITY IN INGOTS MADE OF COMPENSATED FEEDSTOCK SILICON 有权
标题翻译：方法和系统比电阻在阻止使用补偿的可控硅
公开(公告)号：EP2173660A4
公开(公告)日：2010-08-04
申请号：EP08772195
申请日：2008-06-27
申请人： CALISOLAR INC
发明人： KIRSCHT FRITZ , ABROSIMOVA VERA , HEUER MATTHIAS , LINKE DIETER , RAKOTONIAINA JEAN PATRICE , OUNADJELA KAMEL
IPC分类号： C01B33/26
CPC分类号： C30B29/06 , C30B11/006 , Y10T117/1024

10. 发明公开

EP2179078A4 METHOD AND SYSTEM FOR FORMING A SILICON INGOT USING A LOW-GRADE SILICON FEEDSTOCK 有权
标题翻译：方法和系统锭BASIS低等生产SILICIUMMAMTERIAL
公开(公告)号：EP2179078A4
公开(公告)日：2010-08-04
申请号：EP08796655
申请日：2008-07-25
申请人： CALISOLAR INC
发明人： KIRSCHT FRITZ , HEUER MATTHIAS , ABROSIMOVA VERA , LINKE DIETER , RAKOTONIAINA JEAN PATRICE , OUNADJELA KAMEL
IPC分类号： C30B29/06 , C30B11/00
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T117/1024

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