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    • 3. 发明申请
    • COMMON GATE WITH RESISTIVE FEED-THROUGH LOW NOISE AMPLIFIER
    • 具有阻性低噪声放大器的共栅
    • WO2004062093A3
    • 2004-09-16
    • PCT/US0339174
    • 2003-12-09
    • CALIFORNIA INST OF TECHNHAJIMIRI SEYED-ALIGUAN XIANG
    • HAJIMIRI SEYED-ALIGUAN XIANG
    • H03F3/193
    • H03F3/193H03F2200/294H03F2200/372
    • A radio-frequency amplifier is provided. The radiofrequency amplifier includes a transistor having an input terminal, an output terminal, a control terminal, and a transconductance gm. A series-connected feed-through resistance Rf and feed-through capacitance Cf is connected in parallel with the input terminal and the output terminal of the transistor. A load resistance RL is connected to the output terminal. The control terminal of the transistor is biased at a fixed voltage. Part of the transistor noise follows the looped path through the feed-through resistor instead of passing on to the load, which reduces the noise figure of the amplifier. The value of gm, Rf and RL are chosen in a way to keep the input impedance of the amplifier matched to a well-defined signal source impedance.
    • 提供射频放大器。 射频放大器包括具有输入端子,输出端子,控制端子和跨导gm的晶体管。 串联连接的馈通电阻Rf和馈通电容Cf与晶体管的输入端子和输出端子并联连接。 负载电阻RL连接到输出端子。 晶体管的控制端子被偏置在固定电压。 部分晶体管噪声遵循通过馈通电阻器的环路而不是传递到负载,这降低了放大器的噪声系数。 选择gm,Rf和RL的值是为了保持放大器的输入阻抗与定义良好的信号源阻抗相匹配。
    • 10. 发明申请
    • HIGHLY EFFICIENT CAPACITOR STRUCTURES WITH ENHANCED MATCHING PROPERTIES
    • 具有增强匹配特性的高效电容结构
    • WO0227770A3
    • 2003-02-27
    • PCT/US0128693
    • 2001-09-14
    • CALIFORNIA INST OF TECHN
    • HAJIMIRI SEYED-ALIAPARICIO ROBERTO
    • H01G15/00H01L21/02
    • H01L28/82
    • The present specification discloses highly efficient capacitor structures. One embodiment of the present invention is referred to herein as a vertical parallel plate (VPP) structure. In accordance with this embodiment, a capacitor structure comprises a plurality of vertical plates. The vertical plates are substantially parallel to each other, and each vertical plate comprises multiple conducting strips. These conducting strips are substantially parallel to each other and are connected to each other by one or more vias. The vertical plates are alternately connected to each other, creating a first portion of the vertical plates and a second portion of the vertical plates, such that the first portion of the vertical plates forms a first terminal of the capacitor structure, and the second portion of the vertical plates forms a second terminal of the capacitor structure. Either slotted vias or individual vias can be used to connect the conducting strips. Another embodiment of the present invention is referred to herein as a vertical bars (VB) structure. In accordance with this embodiment of the present invention, a capacitor structure comprises a plurality of rows of vertical bars, wherein within each row, the vertical bars are parallel to each other, and each vertical bar comprises multiple conducting patches. These conducting patches are connected to each other by one or more vias.
    • 本说明书公开了高效电容器结构。 本发明的一个实施例在本文中被称为垂直平行板(VPP)结构。 根据本实施例,电容器结构包括多个垂直板。 垂直板基本上彼此平行,并且每个垂直板包括多个导电条。 这些导电条基本上彼此平行并且通过一个或多个通孔彼此连接。 垂直板交替地彼此连接,形成垂直板的第一部分和垂直板的第二部分,使得垂直板的第一部分形成电容器结构的第一端,并且第二部分 垂直板形成电容器结构的第二端子。 可以使用开槽的通孔或单独的通孔来连接导电条。 本发明的另一实施例在此被称为垂直杆(VB)结构。 根据本发明的这个实施例,电容器结构包括多排垂直条,其中在每一行内,垂直条彼此平行,并且每个垂直条包括多个导电贴片。 这些导电贴片通过一个或多个通孔相互连接。