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1. 发明专利

SG11202004183TA COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS EXHIBITING REDUCED SURFACE SCRATCHING 未知
公开(公告)号：SG11202004183TA
公开(公告)日：2020-06-29
申请号：SG11202004183T
申请日：2018-10-25
申请人： CABOT MICROELECTRONICS CORP
发明人： ZHANG KE
IPC分类号： C09G1/02 , C09G1/04 , C09K3/14 , H01L21/306
摘要： The invention provides a chemical-mechanical polishing composition comprising (a) wet-process silica, (b) a combination of (i) an alcohol of formula (I) and (ii) an alcohol of formula (II), (c) hydrogen peroxide, (d) a mineral acid, and (e) water, wherein the polishing composition has a pH from about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

2. 发明专利

SG11201809942WA CHEMICAL-MECHANICAL PROCESSING SLURRY AND METHODS FOR PROCESSING A NICKEL SUBSTRATE SURFACE 未知
公开(公告)号：SG11201809942WA
公开(公告)日：2018-12-28
申请号：SG11201809942W
申请日：2017-06-06
申请人： CABOT MICROELECTRONICS CORP
发明人： ZHANG KE
IPC分类号： C09G1/02 , C09K3/14 , H01L21/306 , H01L21/321
摘要： Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low pH.

3. 发明专利

SG11201602877RA POLISHING COMPOSITION AND METHOD FOR NICKEL-PHOSPHOROUS COATED MEMORY DISKS 未知
公开(公告)号：SG11201602877RA
公开(公告)日：2016-05-30
申请号：SG11201602877R
申请日：2014-10-08
申请人： CABOT MICROELECTRONICS CORP
发明人： LAU HON-WU , PALANISAMY CHINNATHAMBI SELVARAJ , ZHANG KE
IPC分类号： H01L21/304
摘要： The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

4. 发明专利

SG11201909469WA CHEMICAL-MECHANICAL PROCESSING SLURRY AND METHODS 未知
公开(公告)号：SG11201909469WA
公开(公告)日：2019-11-28
申请号：SG11201909469W
申请日：2018-04-12
申请人： CABOT MICROELECTRONICS CORP
发明人： TIAN LU , ZHANG KE , HAERLE ANDREW , LAU HON WU
IPC分类号： C09G1/02 , C09K3/14 , H01L21/306
摘要： INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 18 October 2018 (18.10.2018) W I PO I PCT omit VIII °nolo mu 010 IH voimiflo oimIE (10) International Publication Number WO 2018/191454 Al (51) International Patent Classification: CO9G 1/02 (2006.01) HOlL 21/306 (2006.01) C09K 3/14 (2006.01) (21) International Application Number: PCT/US2018/027234 (22) International Filing Date: 12 April 2018 (12.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/485,441 14 April 2017 (14.04.2017) US (71) Applicant: CABOT MICROELECTRONICS CORPO- RATION [US/US]; 870 North Commons Drive, Aurora, Illinois 60504 (US). (72) Inventors: TIAN, Lu; Cabot Microelectronics Corpora- tion, 870 North Commons Drive, Aurora, Illinois 60504 (US). ZHANG, Ke; Cabot Microelectronics Corporation, 870 North Commons Drive, Aurora, Illinois 60504 (US). HAERLE, Andrew; Cabot Microelectronics Corporation, 870 North Commons Drive, Aurora, Illinois 60504 (US). LAU, Hon Wu; Cabot Microelectronics Corporation, 870 North Commons Drive, Aurora, Illinois 60504 (US). (74) Agent: OMHOLT, Thomas; Cabot Microelectronics Cor- poration, 870 North Commons Drive, Aurora, Illinois 60504 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, (54) Title: CHEMICAL-MECHANICAL PROCESSING SLURRY AND METHODS ME 100nm 5/912016 X 30,000 2.00kV SEI GB_HIGH WD 7.8mm 13:49:52 cr Figure 2 (57) : Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and © methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein f'1 the compositions contain highly irregular-shaped fused silica abrasive particles. o [Continued on next page] WO 2018/191454 Al MIDEDIMOMOIDIONDEIDIOMOHHOIDEINDOHEMOVOIMIE MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(11)) Published: with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))

5. 发明专利

SG11201702051VA NICKEL PHOSPHOROUS CMP COMPOSITIONS AND METHODS 未知
公开(公告)号：SG11201702051VA
公开(公告)日：2017-04-27
申请号：SG11201702051V
申请日：2015-10-13
申请人： CABOT MICROELECTRONICS CORP
发明人： ZHANG KE , PALANISAMY CHINNATHAMBI SELVARAJ
IPC分类号： C09K3/14 , H01L21/304
摘要： A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.

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