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    • 4. 发明授权
    • Semiconductor memory device having pick-up structure
    • 具有拾取结构的半导体存储器件
    • US07098520B2
    • 2006-08-29
    • US10875748
    • 2004-06-23
    • Byung-Kwon ParkKyung-Wook Park
    • Byung-Kwon ParkKyung-Wook Park
    • H01L21/8249
    • H01L27/10897H01L21/761H01L21/823878H01L27/0203
    • A semiconductor memory device includes a first transistor area doped by a first-type dopant for having a plurality of second-type transistors; a second transistor area doped by a second-type dopant for having a plurality of first-type transistors; a first guardring area doped by the first-type dopant between the first and second transistor areas; and a second guardring area doped by the second-type dopant between the first and second transistor areas, wherein the second guardring area runs parallel with the first guardring area in the direction from the first transistor area to the second transistor area.
    • 半导体存储器件包括由第一类型掺杂剂掺杂的第一晶体管区域,用于具有多个第二类型晶体管; 由具有多个第一型晶体管的第二类型掺杂剂掺杂的第二晶体管区域; 在所述第一和第二晶体管区域之间由所述第一类型掺杂剂掺杂的第一保护区; 以及在所述第一和第二晶体管区域之间由所述第二类型掺杂剂掺杂的第二防护区域,其中所述第二防护区域在从所述第一晶体管区域到所述第二晶体管区域的方向上与所述第一防护区域平行。