专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130182502A1 Operating Methods of Nonvolatile Memory Devices 有权
标题翻译：非易失性存储器件的操作方法
公开(公告)号：US20130182502A1
公开(公告)日：2013-07-18
申请号：US13784969
申请日：2013-03-05
申请人： Byeong-in Cheo , Jaehoon Jang , Kihyun Kim , Sunil Shim , Woonkyung Lee
发明人： Byeong-in Cheo , Jaehoon Jang , Kihyun Kim , Sunil Shim , Woonkyung Lee
IPC分类号： G11C16/14 , G11C7/14
CPC分类号： G11C16/14 , G11C7/14 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/30 , H01L27/11582 , H01L29/7926
摘要： Disclosed are methods of operating a nonvolatile memory device which includes a substrate and a plurality of cell strings provided on the substrate, each cell string including a plurality of memory cells stacked in a direction perpendicular to the substrate. The methods may include applying a word line erase voltage to word lines connected to memory cells of the plurality of cell strings; floating ground selection lines connected to ground selection transistors of the plurality of cell strings and string selection lines connected to string selection transistors of the plurality of cell strings; applying a ground voltage to at least one lower dummy word line connected to at least one lower dummy memory cell between memory cells and a ground selection transistor in each of the plurality of cell strings; applying an erase voltage to the substrate; and floating the at least one lower dummy word line after applying of the erase voltage.
摘要翻译：公开了一种非易失性存储器件的操作方法，其包括衬底和设置在衬底上的多个单元串，每个单元串包括沿垂直于衬底的方向堆叠的多个存储单元。所述方法可以包括将字线擦除电压施加到连接到所述多个单元串的存储单元的字线; 连接到多个单元串的接地选择晶体管的浮动接地选择线和连接到多个单元串的串选择晶体管的串选择线; 将至少一个连接到所述多个单元串中的每一个的存储单元之间的至少一个下部虚设存储单元和所述多个单元串中的接地选择晶体管的下虚拟字线施加接地电压; 向基板施加擦除电压; 并且在施加擦除电压之后浮置所述至少一个下部虚拟字线。

IPRDB

热门服务

关于我们

友情链接

联系方式