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1. 发明授权

US6057567A Integrated circuit and method 失效
标题翻译：集成电路及方法
公开(公告)号：US6057567A
公开(公告)日：2000-05-02
申请号：US179238
申请日：1994-01-10
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L29/73 , H01L21/285 , H01L21/306 , H01L21/331 , H01L21/335 , H01L21/338 , H01L29/205 , H01L29/737 , H01L29/778 , H01L29/812 , H01H85/02
CPC分类号： H01L21/28575 , H01L21/30621 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/7371 , H01L29/7783 , H01L29/812
摘要： Heterojunction bipolar transistors (130) with bases (138) including an etch stop element are disclosed. The preferred embodiment devices have Al.sub.x Ga.sub.1-x As emitters (140) and GaAs collectors (136) and bases (138) with In.sub.y Ga.sub.1-x As added to the bases (138) to stop chloride plasma etches.
摘要翻译：公开了具有包括蚀刻停止元件的基底（138）的异质结双极晶体管（130）。优选的实施方案装置具有添加到碱（138）中的In y Ga 1-x As的Al x Ga 1-x As发射体（140）和GaAs收集器（136）和碱（138）以停止氯化物等离子体蚀刻。

2. 发明授权

US5528060A Microwave heterojunction bipolar transistors suitable for low-power, low-noise, and high-power applications 失效
标题翻译：微波异质结双极晶体管适用于低功耗，低噪声和高功率应用
公开(公告)号：US5528060A
公开(公告)日：1996-06-18
申请号：US291789
申请日：1994-08-17
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/66318 , H01L29/0817 , H01L29/7371
摘要： Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter, a base 50 and a collector 70 is disclosed, wherein the emitter composed of one or more islands 30 of semiconductor material having a wider energy bandgap than the base 50. The islands 30 are formed so that they do not cross any boundaries of the active area 60 of the transistor.Other devices, systems and methods are also disclosed.
摘要翻译：通常，在本发明的一种形式中，公开了适用于具有发射极，基极50和集电极70的低功率，低噪声和高功率应用的微波异质结双极晶体管，其中发射极由一个或具有比基底50更宽的能量带隙的多个半导体材料岛30.形成岛30使得它们不会跨过晶体管的有源区60的任何边界。还公开了其他装置，系统和方法。

3. 发明授权

US4692791A Monolithic IMPATT with stripline leads 失效
标题翻译：具有带状线的单片IMPATT
公开(公告)号：US4692791A
公开(公告)日：1987-09-08
申请号：US849312
申请日：1986-04-08
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L21/18 , H01L23/48 , H01L23/522 , H01L23/14 , H01L23/50 , H01L29/90 , H01P3/08
CPC分类号： H01L21/187 , H01L23/481 , H01L23/522 , H01L2924/0002
摘要： The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor material wherein the processing steps required for certain parts of the circuit are incompatible with the processing steps required for other parts of the circuit.
摘要翻译：本公开涉及一种单片电路及其制造方法，其包括使用不同半导体材料的两个基板或相同半导体材料的两个基板，其中电路的某些部分所需的处理步骤与所需的处理步骤不兼容电路的其他部分。

4. 发明授权

US4596069A Three dimensional processing for monolithic IMPATTs 失效
标题翻译：单片IMPATT的三维处理
公开(公告)号：US4596069A
公开(公告)日：1986-06-24
申请号：US630485
申请日：1984-07-13
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L25/18 , H01L21/18 , H01L23/48 , H01L25/04 , H01L27/00 , H01L29/861 , H01L29/864 , H01L29/12 , H01L29/40
CPC分类号： H01L21/187 , H01L23/481 , H01L2924/0002 , H01L2924/10158 , Y10S148/075 , Y10S148/135
摘要： The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor material wherein the processing steps required for certain parts of the circuit are incompatible with the processing steps required for other parts of the circuit.
摘要翻译：本公开涉及一种单片电路及其制造方法，其包括使用不同半导体材料的两个基板或相同半导体材料的两个基板，其中电路的某些部分所需的处理步骤与所需的处理步骤不兼容电路的其他部分。

5. 发明授权

US4539528A Two-port amplifier 失效
标题翻译：双端口放大器
公开(公告)号：US4539528A
公开(公告)日：1985-09-03
申请号：US528201
申请日：1983-08-31
申请人： Burhan Bayraktaroglu , Bumman Kim , William Frensley
发明人： Burhan Bayraktaroglu , Bumman Kim , William Frensley
IPC分类号： H03F3/195 , H03F3/54 , H03F3/55 , H03F3/60
CPC分类号： H03F3/55 , H03F3/608
摘要： A two-port monolithic microwave amplifier, which uses a distributed negative resistance diode with gain (such as an IMPATT diode) as an active element. The diode is tapered (increasing in width but not in thickness) so that, as the RF signal propagates along the diode, it sees a wider and wider active diode region. This diode is operated in the power-saturated region, so that, as the RF signal propagates along the diode, terminal voltage remains essentially constant, but the RF current increases. This configuration is inherently undirectional.
摘要翻译：双端口单片微波放大器，其使用具有增益的分布式负电阻二极管（例如IMPATT二极管）作为有源元件。二极管是锥形的（宽度增加而不是厚度），使得当RF信号沿着二极管传播时，其看到更宽和更宽的有源二极管区域。该二极管在功率饱和区域工作，因此随着RF信号沿着二极管传播，端子电压保持基本恒定，但RF电流增加。这种配置本质上是无方向的。

6. 发明授权

US4525732A Distributed IMPATT structure 失效
标题翻译：分布式IMPATT结构
公开(公告)号：US4525732A
公开(公告)日：1985-06-25
申请号：US528210
申请日：1983-08-31
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L23/66 , H01L27/13 , H01L29/864 , H01P1/15 , H01L29/90 , H01P3/08
CPC分类号： H01L29/864 , H01L23/66 , H01L27/13 , H01L2223/6627 , H01L2924/0002 , H01L2924/15173 , H01L2924/1903 , H01L2924/3011
摘要： In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures the gain medium (the active region of the IMPATT) operates as a transmission line. The prior art has attempted to couple output power from the gain medium through an end contact, i.e. through a contact which intercepts the primary direction of energy propagation of the active medium. In the present invention, a side contact extends along the whole active region in a direction which is parallel to the principal direction of propagation of the energy in the active medium. Thus, the side contact plus the active region together can be considered as a single transmission line.The present invention can be configured as an oscillator, amplifier, phase shifter, or attenuator. When configured as an oscillator, multiple short active regions can be sequentially coupled to a single long microstrip, which serves as the side contact for each of the active regions. This very simple power combining scheme provides extremely high power at millimeter wave frequencies.
摘要翻译：在分布式IMPATT结构中，通过侧面接触将电源耦合出来。也就是说，在先前提出的分布式IMPATT结构中，增益介质（IMPATT的有源区）作为传输线工作。现有技术已经尝试将来自增益介质的输出功率通过端接触，即通过拦截有源介质的能量传播的主要方向的接触来耦合。在本发明中，侧接触沿着平行于活性介质中的能量的主要传播方向的整个有源区延伸。因此，侧接触加上有源区域可以被认为是单个传输线。本发明可以被配置为振荡器，放大器，移相器或衰减器。当配置为振荡器时，多个短的有源区域可以顺序地耦合到单个长的微带，其用作每个有源区域的侧面接触。这种非常简单的功率组合方案在毫米波频率下提供极高的功率。

7. 发明授权

US06724067B2 Low stress thermal and electrical interconnects for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的低应力热和电互连
公开(公告)号：US06724067B2
公开(公告)日：2004-04-20
申请号：US10265548
申请日：2002-10-07
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L27082
CPC分类号： H01L23/4824 , H01L21/8252 , H01L23/4821 , H01L27/0605 , H01L29/41708 , H01L29/7371 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A thermal and electrical interconnect for heterojunction bipolar transistors is disclosed wherein the interconnect is essentially comprised of gold and in thermal and electrical contact with each of the interdigitated emitter fingers and is capable of transporting heat fluxes between 0.25-1.5 mW/&mgr;m2. The interconnect is electrodeposited to form a low-stress interface with the emitter finger, thereby increasing the lifetime and reliability of the transistor.
摘要翻译：公开了用于异质结双极晶体管的热和电互连，其中互连基本上由金构成，并且与每个相互交错的发射极指的热和电接触，并且能够传输0.25-1.5mW / mum2之间的热通量。互连电沉积以与发射极指形成低应力界面，从而增加晶体管的寿命和可靠性。

8. 发明授权

US5648294A Integrated circuit and method 失效
标题翻译：集成电路及方法
公开(公告)号：US5648294A
公开(公告)日：1997-07-15
申请号：US473796
申请日：1995-06-07
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L21/285 , H01L21/306 , H01L21/331 , H01L21/335 , H01L21/338 , H01L29/737 , H01L29/778 , H01L29/812 , H01L21/20
CPC分类号： H01L29/66863 , H01L21/28575 , H01L21/30621 , H01L29/66318 , H01L29/66462 , H01L29/7371 , H01L29/7783 , H01L29/812 , Y10S438/97
摘要： Heterojunction bipolar transistors (130) with bases (138) including an etch stop element are disclosed. The preferred embodiment devices have Al.sub.z Ga.sub.1-z As emitters (140) and GaAs collectors (136) and bases (138) with In.sub.y Ga.sub.1-y As added to the bases (138) to stop chloride plasma etches.
摘要翻译：公开了具有包括蚀刻停止元件的基底（138）的异质结双极晶体管（130）。优选实施例的器件具有添加到碱（138）中的In y Ga 1-y As以停止氯化物等离子体蚀刻的Al z Ga 1-z As发射体（140）和GaAs收集器（136）和碱（138）。

9. 发明授权

US5648278A Method for fabricating microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications 失效
标题翻译：适用于低功耗，低噪声和高功率应用的微波异质结双极晶体管的制造方法
公开(公告)号：US5648278A
公开(公告)日：1997-07-15
申请号：US473164
申请日：1995-06-07
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L29/205 , H01L21/331 , H01L29/10 , H01L29/73 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/7371
摘要： Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter 108, a base 126 and a collector 24 is disclosed, wherein the base 126 is composed of one or more islands 126 of semiconductor material. The one or more islands 126 are formed so that they do not cross any boundaries of the active area 60 of the transistor.
摘要翻译：通常，在本发明的一种形式中，公开了适用于具有发射极108，基极126和集电极24的低功率，低噪声和大功率应用的微波异质结双极晶体管，其中基底126组成半导体材料的一个或多个岛126。形成一个或多个岛126使得它们不跨越晶体管的有源区60的任何边界。

10. 发明授权

US5512776A Interdigitated IMPATT devices 失效
标题翻译：交错的IMPATT设备
公开(公告)号：US5512776A
公开(公告)日：1996-04-30
申请号：US192801
申请日：1988-05-11
申请人： Burhan Bayraktaroglu
发明人： Burhan Bayraktaroglu
IPC分类号： H01L23/482 , H01L29/06 , H01L29/864
CPC分类号： H01L29/864 , H01L23/4821 , H01L23/4824 , H01L29/0649 , H01L2924/0002
摘要： A monolithic circuit including an IMPATT with the IMPATT formed as a plurality of parallel vertical fingers or an array of vertical mesas having a common doped region to apread the area for heat dissipation through the substrate.
摘要翻译：包括具有IMPATT的IMPATT的单片电路，其形成为多个平行垂直指状物或具有公共掺杂区域的垂直台面阵列，以覆盖该区域以通过衬底散热。

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