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    • 1. 发明申请
    • PRODUCING SPIKE-TIMING DEPENDENT PLASTICITY IN AN ULTRA-DENSE SYNAPSE CROSS-BAR ARRAY
    • 在超声波同步串联阵列阵列中产生依赖时间的塑性
    • US20110153533A1
    • 2011-06-23
    • US12645479
    • 2009-12-22
    • Bryan Lawrence JacksonDharmendra Shantilal ModhaBipin Rajendran
    • Bryan Lawrence JacksonDharmendra Shantilal ModhaBipin Rajendran
    • G06N3/02
    • G06N3/049G06N3/0635
    • Embodiments of the invention relate to producing spike-timing dependent plasticity in an ultra-dense synapse cross-bar array for neuromorphic systems. An aspect of the invention includes when an electronic neuron spikes, an alert pulse is sent from the spiking electronic neuron to each electronic neuron connected to the spiking electronic neuron. When the spiking electronic neuron sends the alert pulse, a gate pulse is sent from the spiking electronic neuron to each electronic neuron connected to the spiking electronic neuron. When each electronic neuron receives the alert pulse, a response pulse is sent from each electronic neuron receiving the alert pulse to the spiking electronic neuron. The response pulse is a function of time since a last spiking of the electronic neuron receiving the alert pulse. In addition, the combination of the gate pulse and response pulse is capable increasing or decreasing conductance of a variable state resistor.
    • 本发明的实施方案涉及在用于神经形态系统的超密集突触交叉阵列中产生尖峰时间依赖性可塑性。 本发明的一个方面包括当电子神经元尖峰时,警报脉冲从尖峰电子神经元发送到连接到尖峰电子神经元的每个电子神经元。 当尖峰电子神经元发出警报脉冲时,门脉冲从尖峰电子神经元发送到连接到尖峰电子神经元的每个电子神经元。 当每个电子神经元接收到警报脉冲时,从接收警报脉冲的每个电子神经元发送响应脉冲到尖峰电子神经元。 响应脉冲是从接收警报脉冲的电子神经元的最后一次尖峰起的时间的函数。 此外,门脉冲和响应脉冲的组合能够增加或降低可变状态电阻器的电导。
    • 2. 发明授权
    • Producing spike-timing dependent plasticity in an ultra-dense synapse cross-bar array
    • 在超密集突触交叉阵列中产生尖峰时序依赖性可塑性
    • US08527438B2
    • 2013-09-03
    • US12645479
    • 2009-12-22
    • Bryan Lawrence JacksonDharmendra Shantilal ModhaBipin Rajendran
    • Bryan Lawrence JacksonDharmendra Shantilal ModhaBipin Rajendran
    • G06E1/00G06E3/00G06F15/18G06G7/00
    • G06N3/049G06N3/0635
    • Embodiments of the invention relate to producing spike-timing dependent plasticity in an ultra-dense synapse cross-bar array for neuromorphic systems. An aspect of the invention includes when an electronic neuron spikes, an alert pulse is sent from the spiking electronic neuron to each electronic neuron connected to the spiking electronic neuron. When the spiking electronic neuron sends the alert pulse, a gate pulse is sent from the spiking electronic neuron to each electronic neuron connected to the spiking electronic neuron. When each electronic neuron receives the alert pulse, a response pulse is sent from each electronic neuron receiving the alert pulse to the spiking electronic neuron. The response pulse is a function of time since a last spiking of the electronic neuron receiving the alert pulse. In addition, the combination of the gate pulse and response pulse is capable increasing or decreasing conductance of a variable state resistor.
    • 本发明的实施方案涉及在用于神经形态系统的超密集突触交叉阵列中产生尖峰时间依赖性可塑性。 本发明的一个方面包括当电子神经元尖峰时,警报脉冲从尖峰电子神经元发送到连接到尖峰电子神经元的每个电子神经元。 当尖峰电子神经元发出警报脉冲时,门脉冲从尖峰电子神经元发送到连接到尖峰电子神经元的每个电子神经元。 当每个电子神经元接收到警报脉冲时,从接收警报脉冲的每个电子神经元发送响应脉冲到尖峰电子神经元。 响应脉冲是从接收警报脉冲的电子神经元的最后一次尖峰起的时间的函数。 此外,门脉冲和响应脉冲的组合能够增加或降低可变状态电阻器的电导。