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1. 发明授权

US08320424B2 Optical component cleanliness and debris management in laser micromachining applications 有权
标题翻译：激光微加工应用中的光学元件清洁度和碎屑管理
公开(公告)号：US08320424B2
公开(公告)日：2012-11-27
申请号：US11565356
申请日：2006-11-30
申请人： Bryan C. Bolt , David M. Hemenway , Mark Kosmowski , A. Grey Lerner , Brady E. Nilsen , Richard Pope
发明人： Bryan C. Bolt , David M. Hemenway , Mark Kosmowski , A. Grey Lerner , Brady E. Nilsen , Richard Pope
IPC分类号： H01S3/22 , H01S3/223
CPC分类号： B23K26/12 , B23K26/064 , B23K26/0643 , B23K26/128 , B23K26/14 , B23K26/142
摘要： Preferred embodiments of a purge gas port, laser beam attenuating input window, and laser shutter constitute subsystems of a UV laser optical system in which a laser beam is completely enclosed to reduce contamination of the optical system components. Purge gas is injected through multiple locations in a beam tube assembly to ensure that the optical component surfaces sensitive to contamination are in the flow path of the purge gas. The input window functions as a fixed level attenuator to limit photopolymerization of airborne molecules and particles. Periodically rotating optical elements asymmetrically in their holders reduces burn damage to the optics.
摘要翻译：吹扫气体端口，激光束衰减输入窗口和激光快门的优选实施例构成UV激光光学系统的子系统，其中激光束被完全封闭以减少光学系统部件的污染。吹扫气体通过射束管组件中的多个位置注入，以确保对污染敏感的光学部件表面位于吹扫气体的流动路径中。输入窗口用作固定电平衰减器，以限制空气传播的分子和颗粒的光聚合。在其支架中不对称地定期旋转的光学元件减少了对光学元件的烧伤。

2. 发明授权

US08666530B2 Silicon etching control method and system 失效
标题翻译：硅蚀刻控制方法和系统
公开(公告)号：US08666530B2
公开(公告)日：2014-03-04
申请号：US12970483
申请日：2010-12-16
申请人： Daragh Seosamh Finn , Andrew Edwin Hooper , A. Grey Lerner
发明人： Daragh Seosamh Finn , Andrew Edwin Hooper , A. Grey Lerner
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L22/12 , H01L22/26
摘要： An etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. An estimated etch time duration is determined for removing the amount of the material upon exposing the silicon workpiece to the spontaneous etchant for the estimated etch time duration. In some embodiments, the system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.
摘要翻译：蚀刻控制系统控制硅工件对自发蚀刻剂的曝光。该系统基于与硅工件相对应的计量信息来确定要从硅工件移除的材料的量。在估计的蚀刻持续时间内，确定了将硅工件暴露于自发蚀刻剂时去除材料量的估计蚀刻持续时间。在一些实施例中，系统监测由硅工件暴露于自发蚀刻剂引起的硅工件的质量变化，以确定何时材料的量已经从硅工件移除。当硅工件的质量变化表明材料的量已经被去除时，硅工件暴露于自发蚀刻剂被停止。

3. 发明申请

US20120158169A1 CLOSED-LOOP SILICON ETCHING CONTROL METHOD AND SYSTEM 失效
标题翻译：闭环硅蚀刻控制方法与系统
公开(公告)号：US20120158169A1
公开(公告)日：2012-06-21
申请号：US12970483
申请日：2010-12-16
申请人： Daragh S. Finn , Andrew E. Hooper , A. Grey Lerner
发明人： Daragh S. Finn , Andrew E. Hooper , A. Grey Lerner
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L22/12 , H01L22/26
摘要： A closed-loop etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. The mass of the material to be removed is calculated, and the silicon workpiece is exposed to the spontaneous etchant to remove the material. The system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.
摘要翻译：闭环蚀刻控制系统控制硅工件对自发蚀刻剂的曝光。该系统基于与硅工件相对应的计量信息来确定要从硅工件移除的材料的量。计算要去除的材料的质量，并将硅工件暴露于自发蚀刻剂以除去材料。该系统监测由硅工件暴露于自发蚀刻剂引起的硅工件的质量变化，以确定何时材料的量已经从硅工件移除。当硅工件的质量变化表明材料的量已经被去除时，硅工件暴露于自发蚀刻剂被停止。

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