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1. 发明授权

US07938079B2 Annular aerosol jet deposition using an extended nozzle 有权
标题翻译：使用延长喷嘴的环形气溶胶喷射沉积
公开(公告)号：US07938079B2
公开(公告)日：2011-05-10
申请号：US11011366
申请日：2004-12-13
申请人： Bruce H. King , Michael J. Renn , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Bruce H. King , Michael J. Renn , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05C5/00 , B05C19/00 , F23D11/10
CPC分类号： H05K3/125
摘要： Method and apparatus for improved maskless deposition of electronic and biological materials using an extended nozzle. The process is capable of direct deposition of features with linewidths varying from a few microns to a fraction of a millimeter, and can be used to deposit features on targets with damage thresholds near 100° C. or less. Deposition and subsequent processing may be performed under ambient conditions and produce linewidths as low as 1 micron, with sub-micron edge definition. The extended nozzle reduces particle overspray and has a large working distance; that is, the orifice to target distance may be several millimeters or more, enabling direct write onto non-planar surfaces. The nozzle allows for deposition of features with linewidths that are approximately as small as one-twentieth the size of the nozzle orifice diameter, and is preferably interchangeable, enabling rapid variance of deposited linewidth.
摘要翻译：使用扩展喷嘴改善电子和生物材料的无掩模沉积的方法和装置。该过程能够直线沉积具有从几微米变化到几分之一毫米的线宽的特征，并且可以用于在具有接近100℃或更低的损伤阈值的靶上沉积特征。沉积和后续处理可以在环境条件下进行，并产生低至1微米的线宽，具有亚微米边缘定义。扩展喷嘴可以减少颗粒过度喷涂，工作距离大; 也就是说，孔到目标距离可以是几毫米或更多，使得能够直接写在非平面表面上。喷嘴允许具有大约等于喷嘴孔直径的二十分之二的线宽的特征的沉积，并且优选地是可互换的，使得沉积线宽的快速变化。

2. 发明授权

US08455051B2 Apparatuses and methods for maskless mesoscale material deposition 有权
公开(公告)号：US08455051B2
公开(公告)日：2013-06-04
申请号：US12976906
申请日：2010-12-22
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05D5/12
CPC分类号： B05D1/02 , B05D3/06 , B05D3/068 , B05D5/00 , B05D5/12 , C23C18/06 , C23C18/14 , H05K3/1241
摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

3. 发明授权

US07987813B2 Apparatuses and methods for maskless mesoscale material deposition 有权
标题翻译：无掩模中尺度材料沉积的设备和方法
公开(公告)号：US07987813B2
公开(公告)日：2011-08-02
申请号：US12349279
申请日：2009-01-06
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05C11/00 , B05C11/06 , B05B1/08 , B05B5/00
CPC分类号： B05D1/02 , B05D3/06 , B05D3/068 , B05D5/00 , B05D5/12 , C23C18/06 , C23C18/14 , H05K3/1241
摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
摘要翻译：用于电子和生物材料无掩模沉积的装置和方法。该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在环境条件下，无需真空气氛。该方法也可以在惰性气体环境中进行。沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

4. 发明申请

US20110129615A1 Apparatuses and Methods for Maskless Mesoscale Material Deposition 有权
标题翻译：无掩模中尺度材料沉积的设备和方法
公开(公告)号：US20110129615A1
公开(公告)日：2011-06-02
申请号：US12976906
申请日：2010-12-22
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05D1/02 , B05D1/12 , B05D3/02 , B05D3/06 , B05D5/12 , B05D5/06 , H05K3/00 , B05D5/00 , B05D7/00
CPC分类号： B05D1/02 , B05D3/06 , B05D3/068 , B05D5/00 , B05D5/12 , C23C18/06 , C23C18/14 , H05K3/1241
摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
摘要翻译：用于电子和生物材料无掩模沉积的装置和方法。该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在环境条件下，无需真空气氛。该方法也可以在惰性气体环境中进行。沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

5. 发明申请

US20090114151A1 Apparatuses and Methods for Maskless Mesoscale Material Deposition 有权
标题翻译：无掩模中尺度材料沉积的设备和方法
公开(公告)号：US20090114151A1
公开(公告)日：2009-05-07
申请号：US12349279
申请日：2009-01-06
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05C11/00
CPC分类号： B05D1/02 , B05D3/06 , B05D3/068 , B05D5/00 , B05D5/12 , C23C18/06 , C23C18/14 , H05K3/1241
摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
摘要翻译：用于电子和生物材料无掩模沉积的装置和方法。该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于在具有接近100℃的损伤阈值的基底上沉积特征。沉积和随后的加工可以在环境条件下，无需真空气氛。该方法也可以在惰性气体环境中进行。沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

6. 发明授权

US07485345B2 Apparatuses and methods for maskless mesoscale material deposition 有权
标题翻译：无掩模中尺度材料沉积的设备和方法
公开(公告)号：US07485345B2
公开(公告)日：2009-02-03
申请号：US11317457
申请日：2005-12-22
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05D5/00
CPC分类号： B05D1/02 , B05D3/06 , B05D3/068 , B05D5/00 , B05D5/12 , C23C18/06 , C23C18/14 , H05K3/1241
摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
摘要翻译：用于电子和生物材料无掩模沉积的装置和方法。该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在环境条件下，无需真空气氛。该方法也可以在惰性气体环境中进行。沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

7. 发明授权

US08110247B2 Laser processing for heat-sensitive mesoscale deposition of oxygen-sensitive materials 有权
标题翻译：用于感热中等尺度沉积氧敏感材料的激光加工
公开(公告)号：US08110247B2
公开(公告)日：2012-02-07
申请号：US11430636
申请日：2006-05-08
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B41J2/015
CPC分类号： H05K3/102 , H05K3/105 , H05K2203/086 , H05K2203/087 , H05K2203/107 , H05K2203/1344 , Y10S428/901
摘要： A method of depositing various materials onto heat-sensitive targets, particularly oxygen-sensitive materials. Heat-sensitive targets are generally defined as targets that have thermal damage thresholds that are lower than the temperature required to process a deposited material. The invention uses precursor solutions and/or particle or colloidal suspensions, along with optional pre-deposition treatment and/or post-deposition treatment to lower the laser power required to drive the deposit to its final state. The present invention uses Maskless Mesoscale Material Deposition (M3D™) to perform direct deposition of material onto the target in a precise, highly localized fashion. Features with linewidths as small as 4 microns may be deposited, with little or no material waste. A laser is preferably used to heat the material to process it to obtain the desired state, for example by chemical decomposition, sintering, polymerization, and the like. This laser processing may be performed in an ambient environment with laser powers of less than 100 milliwatts. Cover gases and/or forming gases may be used during thermal processing to change the material properties, for example by preventing oxidation.
摘要翻译：将各种材料沉积在热敏性靶材上，特别是氧敏感材料的方法。热敏靶标通常定义为具有低于处理沉积材料所需温度的热损伤阈值的靶。本发明使用前体溶液和/或颗粒或胶态悬浮液以及任选的预沉积处理和/或沉积后处理以降低将沉积物驱动到其最终状态所需的激光功率。本发明使用无掩模中尺度材料沉积（M3D TM）以精确，高度局部化的方式将材料直接沉积到靶上。具有小至4微米的线宽的特征可能被沉积，很少或没有材料浪费。优选使用激光加热材料以加工以获得期望的状态，例如通过化学分解，烧结，聚合等。该激光处理可以在具有小于100毫瓦的激光功率的周围环境中进行。可以在热处理期间使用覆盖气体和/或成形气体来改变材料性质，例如通过防止氧化。

8. 发明授权

US07294366B2 Laser processing for heat-sensitive mesoscale deposition 有权
标题翻译：用于热敏中尺度沉积的激光加工
公开(公告)号：US07294366B2
公开(公告)日：2007-11-13
申请号：US10952108
申请日：2004-09-27
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05D3/06
CPC分类号： H05K3/125 , B05D1/02 , B05D3/06 , C08F2/46 , C23C18/02 , C23C18/14 , H01L51/0009
摘要： A method of depositing various materials onto heat-sensitive targets. Heat-sensitive targets are generally defined as targets that have thermal damage thresholds that are lower than the temperature required to process a deposited material. The invention uses precursor solutions and/or particle or colloidal suspensions, along with optional pre-deposition treatment and/or post-deposition treatment to lower the laser power required to drive the deposit to its final state. The present invention uses Maskless Mesoscale Material Deposition (M3D™) to perform direct deposition of material onto the target in a precise, highly localized fashion. Features with linewidths as small as 4 microns may be deposited, with little or no material waste. A laser is preferably used to heat the material to process it to obtain the desired state, for example by chemical decomposition, sintering, polymerization, and the like. This laser processing may be performed in an ambient environment with laser powers of less than 100 milliwatts.
摘要翻译：将各种材料沉积在热敏靶上的方法。热敏靶标通常定义为具有低于处理沉积材料所需温度的热损伤阈值的靶。本发明使用前体溶液和/或颗粒或胶态悬浮液以及任选的预沉积处理和/或沉积后处理以降低将沉积物驱动到其最终状态所需的激光功率。本发明使用无掩模中尺度材料沉积（M 3 S D D TM）以精确，高度局部化的方式将材料直接沉积到靶上。具有小至4微米的线宽的特征可能被沉积，很少或没有材料浪费。优选使用激光加热材料以加工以获得期望的状态，例如通过化学分解，烧结，聚合等。该激光处理可以在具有小于100毫瓦的激光功率的周围环境中进行。

9. 发明授权

US07658163B2 Direct write# system 有权
标题翻译：直写＃系统
公开(公告)号：US07658163B2
公开(公告)日：2010-02-09
申请号：US11458966
申请日：2006-07-20
申请人： Michael J. Renn , Bruce H. King , Manampathy G. Giridharan , Jyh-Cherng Sheu
发明人： Michael J. Renn , Bruce H. King , Manampathy G. Giridharan , Jyh-Cherng Sheu
IPC分类号： B05C19/00 , B05B5/03 , B05B1/28 , B05B5/00
CPC分类号： C23C4/12 , B41J2/215 , B41J2/435 , C23C24/04 , H01L24/11 , H01L24/81 , H01L2224/13099 , H01L2224/24011 , H01L2224/76155 , H01L2224/81801 , H01L2224/82 , H01L2224/85 , H01L2224/86 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01074 , H01L2924/01087 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H05K3/102 , H01L2924/00
摘要： Methods and apparatus for the deposition of a source material (10) are disclosed. An atomizer (12) renders a supply of source material (10) into many discrete particles. A force applicator (14) propels the particles in continuous, parallel streams of discrete particles. A collimator (16) controls the direction of flight of the particles in the stream prior to their deposition on a substrate (18). In an alternative embodiment of the invention, the viscosity of the particles may be controlled to enable complex depositions of non-conformal or three-dimensional surfaces. The invention also includes a wide variety of substrate treatments which may occur before, during or after deposition. In yet another embodiment of the invention, a virtual or cascade impactor may be employed to remove selected particles from the deposition stream.
摘要翻译：公开了用于沉积源材料（10）的方法和装置。雾化器（12）将源材料（10）供应到许多离散的颗粒中。力施加器（14）推动颗粒处于连续的，平行的离散颗粒流中。准直器（16）在其沉积在基底（18）上之前控制颗粒在流中的飞行方向。在本发明的另一个实施方案中，可以控制颗粒的粘度以使复合物沉积非保形或三维表面。本发明还包括可以在沉积之前，期间或之后发生的各种各样的基底处理。在本发明的另一个实施例中，可以使用虚拟或级联冲击器来从沉积流中去除所选择的颗粒。

10. 发明授权

US07045015B2 Apparatuses and method for maskless mesoscale material deposition 有权
公开(公告)号：US07045015B2
公开(公告)日：2006-05-16
申请号：US10346935
申请日：2003-01-17
申请人： Michael J. Renn , Bruce H. King , Marcelino Essien , Lemna J. Hunter
发明人： Michael J. Renn , Bruce H. King , Marcelino Essien , Lemna J. Hunter
IPC分类号： B05C11/06
CPC分类号： B05D1/02 , B05D3/06 , B05D3/068 , B05D5/00 , B05D5/12 , C23C18/06 , C23C18/14 , H05K3/1241
摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

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