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1. 发明授权

US08657994B2 System and method for improved epitaxial lift off 有权
标题翻译：改善外延剥离的系统和方法
公开(公告)号：US08657994B2
公开(公告)日：2014-02-25
申请号：US13078722
申请日：2011-04-01
申请人： Brian Burrows , Brian Brown , Thomas Gmitter , Gang He
发明人： Brian Burrows , Brian Brown , Thomas Gmitter , Gang He
IPC分类号： B32B38/10
CPC分类号： H01L31/18 , B32B43/006 , B32B2457/00 , H01L21/67086 , H01L21/67303 , H01L21/67346 , H01L21/67757 , H01L21/7813 , H01L31/1892 , H01L33/005 , Y02E10/50 , Y10T29/49824 , Y10T156/1111 , Y10T156/1168 , Y10T156/1978
摘要： An apparatus, system and method for performing ELO are disclosed. Device assemblies are contemporaneously etched in a stacked arrangement. Each device assembly may be placed in a respective tray, where the trays are overlapped and spaced apart from one another. In this manner, more device assemblies can be etched per unit area compared to conventional systems. Further, by stacking device assemblies during etching, the yield can be improved and/or the cost of the etch tank and associated hardware can be reduced.
摘要翻译：公开了一种用于执行ELO的装置，系统和方法。器件组件以堆叠的方式同时蚀刻。每个设备组件可以放置在相应的托盘中，其中托盘重叠并且彼此间隔开。以这种方式，与常规系统相比，每单位面积可以蚀刻更多的器件组件。此外，通过在蚀刻期间堆叠器件组件，可以提高成品率和/或可以降低蚀刻槽和相关硬件的成本。

2. 发明申请

US20100001316A1 EPITAXIAL LIFT OFF STACK HAVING A NON-UNIFORM HANDLE AND METHODS THEREOF 有权
标题翻译：具有非均匀手柄的外延提升堆栈及其方法
公开(公告)号：US20100001316A1
公开(公告)日：2010-01-07
申请号：US12475418
申请日：2009-05-29
申请人： Thomas Gmitter , Gang He , Andreas Hegedus
发明人： Thomas Gmitter , Gang He , Andreas Hegedus
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。在一个实施例中，提供了在外延剥离工艺期间形成薄膜材料的方法，其包括在衬底上的牺牲层上形成外延材料，将不均匀的支撑手柄附着在外延材料上，以及去除牺牲在蚀刻过程中。蚀刻工艺还包括从衬底剥离外延材料，同时在其间形成蚀刻缝隙，并在蚀刻工艺期间弯曲支撑柄以在外延材料中形成压缩。在一个实例中，不均匀的支撑手柄包含具有变化厚度的蜡膜。

3. 发明申请

US20130042801A1 OFF-AXIS EPITAXIAL LIFT OFF PROCESS 有权
标题翻译：离轴外延提升过程
公开(公告)号：US20130042801A1
公开(公告)日：2013-02-21
申请号：US13210138
申请日：2011-08-15
申请人： Thomas Gmitter , Gang He , Melissa Archer , Siew Neo
发明人： Thomas Gmitter , Gang He , Melissa Archer , Siew Neo
IPC分类号： C30B19/00 , C30B23/02 , C22C28/00 , C30B25/02
CPC分类号： C22C29/00 , C30B29/00 , C30B29/40 , C30B29/42 , C30B33/06 , C30B33/08 , C30B33/10
摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.
摘要翻译：本文描述的实施例提供了通过外延剥离（ELO）工艺从生长晶片形成和去除外延膜和材料的工艺。在一些实施例中，生长晶片具有在ELO过程期间被利用的离轴取向的边缘表面。边缘表面的离轴取向提供了用于控制ELO工艺期间的蚀刻速率的附加变量，因此可以调制蚀刻前沿以防止形成高应力点，从而减少或防止外延膜堆叠的应力和破裂。在一个实施例中，生长晶片是矩形的并且具有在0°时相对于<110>的边缘取向大于0°并且高达90°的离轴取向的边缘表面。

4. 发明授权

US08367518B2 Epitaxial lift off stack having a multi-layered handle and methods thereof 有权
标题翻译：具有多层手柄的外延提升堆叠及其方法
公开(公告)号：US08367518B2
公开(公告)日：2013-02-05
申请号：US12475420
申请日：2009-05-29
申请人： Thomas Gmitter , Gang He
发明人： Thomas Gmitter , Gang He
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods for forming such films and devices. In one embodiment, a method for forming an ELO thin film includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a multi-layered support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate and forming an etch crevice therebetween while maintaining compression in the epitaxial material. The method further provides that the multi-layered support handle contains a stiff support layer adhered to the epitaxial material, a soft support layer adhered to the stiff support layer, and a handle plate adhered to the soft support layer. In one example, the stiff support layer may contain multiple inorganic layers, such as metal layers, dielectric layers, or combinations thereof.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和器件的装置和方法。在一个实施例中，用于形成ELO薄膜的方法包括在衬底上的牺牲层上沉积外延材料，将多层支撑手柄粘附到外延材料上，以及在蚀刻工艺期间去除牺牲层。蚀刻工艺还包括从衬底剥离外延材料并在其间形成蚀刻缝隙，同时保持外延材料中的压缩。该方法进一步提供了多层支撑手柄包含粘附到外延材料的刚性支撑层，粘附到刚性支撑层的软支撑层和粘附到软支撑层的手柄板。在一个示例中，刚性支撑层可以包含多个无机层，例如金属层，电介质层或其组合。

5. 发明申请

US20090321885A1 EPITAXIAL LIFT OFF STACK HAVING A UNIVERSALLY SHRUNK HANDLE AND METHODS THEREOF 有权
标题翻译：具有全能的SHRUNK手柄的外墙起吊架及其方法
公开(公告)号：US20090321885A1
公开(公告)日：2009-12-31
申请号：US12475411
申请日：2009-05-29
申请人： Melissa Archer , Harry Atwater , Thomas Gmitter , Gang He , Andreas Hegedus , Gregg Higashi , Stewart Sonnenfeldt
发明人： Melissa Archer , Harry Atwater , Thomas Gmitter , Gang He , Andreas Hegedus , Gregg Higashi , Stewart Sonnenfeldt
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将普遍可收缩的支撑手柄附着在外延材料上，其中普遍可收缩的支撑手柄包含可收缩材料，并且收缩支撑手柄以在收缩过程中在支撑手柄中形成张力并在外延材料中压缩。该方法还包括在蚀刻工艺期间去除牺牲层，在衬底之间形成蚀刻缝隙并将支撑柄弯曲成具有实质曲率的同时从衬底剥离外延材料。

6. 发明授权

US09070764B2 Epitaxial lift off stack having a pre-curved handle and methods thereof 有权
标题翻译：具有预弯曲手柄的外延提升堆叠及其方法
公开(公告)号：US09070764B2
公开(公告)日：2015-06-30
申请号：US12475406
申请日：2009-05-29
申请人： Melissa Archer , Harry Atwater , Thomas Gmitter , Gang He , Andreas Hegedus , Gregg Higashi , Stewart Sonnenfeldt
发明人： Melissa Archer , Harry Atwater , Thomas Gmitter , Gang He , Andreas Hegedus , Gregg Higashi , Stewart Sonnenfeldt
IPC分类号： H01L21/78 , H01L21/683
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将平坦化的预弯曲支撑手柄粘附到外延材料上，以及在蚀刻期间去除牺牲层处理。蚀刻工艺包括弯曲预弯曲的支撑手柄以具有相当大的曲率，同时从衬底剥离外延材料并在其间形成蚀刻缝隙。在蚀刻过程中压缩保持在外延材料内。扁平的预弯曲的支撑手柄可以通过使预弯曲的支撑材料变平而形成。

7. 发明授权

US08716107B2 Epitaxial lift off stack having a non-uniform handle and methods thereof 有权
标题翻译：具有不均匀手柄的外延提升堆栈及其方法
公开(公告)号：US08716107B2
公开(公告)日：2014-05-06
申请号：US13536043
申请日：2012-06-28
申请人： Thomas Gmitter , Gang He , Andreas Hegedus
发明人： Thomas Gmitter , Gang He , Andreas Hegedus
IPC分类号： H01L21/46
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。在一个实施例中，提供了在外延剥离工艺期间形成薄膜材料的方法，其包括在衬底上的牺牲层上形成外延材料，将不均匀的支撑手柄附着在外延材料上，以及去除牺牲在蚀刻过程中。蚀刻工艺还包括从衬底剥离外延材料，同时在其间形成蚀刻缝隙，并在蚀刻工艺期间弯曲支撑柄以在外延材料中形成压缩。在一个实例中，不均匀的支撑手柄包含具有变化厚度的蜡膜。

8. 发明申请

US20100001374A1 EPITAXIAL LIFT OFF STACK HAVING A MULTI-LAYERED HANDLE AND METHODS THEREOF 有权
标题翻译：具有多层手柄的外墙起落架及其方法
公开(公告)号：US20100001374A1
公开(公告)日：2010-01-07
申请号：US12475420
申请日：2009-05-29
申请人： Thomas Gmitter , Gang He
发明人： Thomas Gmitter , Gang He
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods for forming such films and devices. In one embodiment, a method for forming an ELO thin film includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a multi-layered support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate and forming an etch crevice therebetween while maintaining compression in the epitaxial material. The method further provides that the multi-layered support handle contains a stiff support layer adhered to the epitaxial material, a soft support layer adhered to the stiff support layer, and a handle plate adhered to the soft support layer. In one example, the stiff support layer may contain multiple inorganic layers, such as metal layers, dielectric layers, or combinations thereof.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和器件的装置和方法。在一个实施例中，用于形成ELO薄膜的方法包括在衬底上的牺牲层上沉积外延材料，将多层支撑手柄粘附到外延材料上，以及在蚀刻工艺期间去除牺牲层。蚀刻工艺还包括从衬底剥离外延材料并在其间形成蚀刻缝隙，同时保持外延材料中的压缩。该方法进一步提供了多层支撑手柄包含粘附到外延材料的刚性支撑层，粘附到刚性支撑层的软支撑层和粘附到软支撑层的手柄板。在一个示例中，刚性支撑层可以包含多个无机层，例如金属层，电介质层或其组合。

9. 发明授权

US09994936B2 Off-axis epitaxial lift off process 有权
公开(公告)号：US09994936B2
公开(公告)日：2018-06-12
申请号：US13210138
申请日：2011-08-15
申请人： Thomas Gmitter , Gang He , Melissa Archer , Siew Neo
发明人： Thomas Gmitter , Gang He , Melissa Archer , Siew Neo
IPC分类号： C30B19/00 , C22C29/00 , C30B33/06 , C30B29/42 , C30B29/40 , C30B33/08 , C30B29/00 , C30B33/10
CPC分类号： C22C29/00 , C30B29/00 , C30B29/40 , C30B29/42 , C30B33/06 , C30B33/08 , C30B33/10
摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process- and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.

10. 发明授权

US08314011B2 Epitaxial lift off stack having a non-uniform handle and methods thereof 有权
标题翻译：具有不均匀手柄的外延提升堆栈及其方法
公开(公告)号：US08314011B2
公开(公告)日：2012-11-20
申请号：US12475418
申请日：2009-05-29
申请人： Thomas Gmitter , Gang He , Andreas Hegedus
发明人： Thomas Gmitter , Gang He , Andreas Hegedus
IPC分类号： H01L21/46
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。在一个实施例中，提供了在外延剥离工艺期间形成薄膜材料的方法，其包括在衬底上的牺牲层上形成外延材料，将不均匀的支撑手柄附着在外延材料上，以及去除牺牲在蚀刻过程中。蚀刻工艺还包括从衬底剥离外延材料，同时在其间形成蚀刻缝隙，并在蚀刻工艺期间弯曲支撑柄以在外延材料中形成压缩。在一个实例中，不均匀的支撑手柄包含具有变化厚度的蜡膜。

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