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    • 8. 发明申请
    • Carbon Nanotube-Silicon Composite Structures and Methods for Making Same
    • 碳纳米管 - 硅复合结构及其制备方法
    • US20090042136A1
    • 2009-02-12
    • US11579614
    • 2005-05-06
    • James M. TourBo ChenAusten K. FlattMichael StewartChristopher A. DykeFrancisco Maya
    • James M. TourBo ChenAusten K. FlattMichael StewartChristopher A. DykeFrancisco Maya
    • G03F7/20H01L21/44
    • B82Y30/00B82Y10/00H01L51/0048Y10S977/847Y10S977/892
    • The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon or other surfaces, wherein such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. The present invention is also directed to the novel compositions produced by such methods. Previous work by Applicants has demonstrated covalent attachment of arenes via aryldiazonium salts to Si (hydride passivated single crystal or poly Si; or , p-doped, n-doped or intrinsic), GaAs, and Pd surfaces. In the case of Si, this provides a direct arene-Si bond with no intervening oxide. Applicants have also reported on the use of aryldiazonium salts for the direct covalent linkage of arenes to single wall carbon nanotubes (SWNTs) where the nanotubes can exist either as bundles or individual structures (when surfactant-wrapped). In some embodiments, the present invention is directed to a merger of these two technologies to afford the covalent attachment of individualized (unroped) SWNTs to Si surfaces.
    • 本发明涉及将碳纳米管(CNT)附着或接枝到硅或其它表面上的方法,其中通过碳纳米管和硅表面之一或两者上的官能团进行这种附着或接枝。 本发明还涉及通过这些方法制备的新型组合物。 申请人的以前的工作已经证明了芳烃通过芳基重氮盐与Si(氢化物钝化单晶或多晶硅; <111>或<100>,p掺杂,n掺杂或本征),GaAs和Pd表面共价连接。 在Si的情况下,这提供了没有中间氧化物的直接芳烃-Si键。 申请人还报导了芳基重氮盐用于将芳烃直接共价连接到单壁碳纳米管(SWNT)上,其中纳米管可以以束或单独的结构(当表面活性剂包裹时)存在。 在一些实施方案中,本发明涉及这两种技术的合并,以提供个体化(未经处理的)SWNT共价连接到Si表面。