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    • 1. 发明申请
    • METHOD OF MANUFACTURING DUAL ORIENTATION WAFERS
    • 制造双取向波的方法
    • US20060286778A1
    • 2006-12-21
    • US11160365
    • 2005-06-21
    • Brent AndersonJohn Ellis-MonaghanAlain LoiseauKirk Peterson
    • Brent AndersonJohn Ellis-MonaghanAlain LoiseauKirk Peterson
    • H01L21/20
    • H01L21/823807H01L21/823878H01L21/8252
    • Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isolation structures are formed to isolate the silicon material in the trench from a semiconductor layer with a second crystalline orientation. Additional isolation structures are formed within the silicon material in the trench and within the semiconductor layer. A patterned amorphization process is performed on the silicon material in the trench and followed by a recrystallization anneal such that the silicon material in the trench recrystallizes with the same crystalline orientation as the silicon substrate. The resulting structure is a semiconductor wafer with isolated semiconductor areas on the same plane having different crystalline orientations as well as isolated sections within each semiconductor area for device formation.
    • 公开了制造双取向晶片的方法。 在多层晶片中形成具有第一晶体取向的硅衬底的沟槽。 沟槽填充有硅材料(例如,非晶硅或多晶硅沟槽)。 形成隔离结构以将沟槽中的硅材料与具有第二晶体取向的半导体层隔离。 另外的隔离结构形成在沟槽内和半导体层内的硅材料内。 对沟槽中的硅材料进行图案化非晶化处理,然后进行再结晶退火,使得沟槽中的硅材料以与硅衬底相同的结晶取向重结晶。 所得到的结构是在具有不同晶体取向的同一平面上的隔离半导体区域以及用于器件形成的每个半导体区域内的隔离部分的半导体晶片。
    • 3. 发明申请
    • METHOD OF MANUFACTURING DUAL ORIENTATION WAFERS
    • 制造双取向波的方法
    • US20080096370A1
    • 2008-04-24
    • US11955436
    • 2007-12-13
    • Brent AndersonJohn Ellis-MonaghanAlain LoiseauKirk Peterson
    • Brent AndersonJohn Ellis-MonaghanAlain LoiseauKirk Peterson
    • H01L21/20
    • H01L21/823807H01L21/823878H01L21/8252
    • Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isolation structures are formed to isolate the silicon material in the trench from a semiconductor layer with a second crystalline orientation. Additional isolation structures are formed within the silicon material in the trench and within the semiconductor layer. A patterned amorphization process is performed on the silicon material in the trench and followed by a recrystallization anneal such that the silicon material in the trench recrystallizes with the same crystalline orientation as the silicon substrate. The resulting structure is a semiconductor wafer with isolated semiconductor areas on the same plane having different crystalline orientations as well as isolated sections within each semiconductor area for device formation.
    • 公开了制造双取向晶片的方法。 在多层晶片中形成具有第一晶体取向的硅衬底的沟槽。 沟槽填充有硅材料(例如,非晶硅或多晶硅沟槽)。 形成隔离结构以将沟槽中的硅材料与具有第二晶体取向的半导体层隔离。 另外的隔离结构形成在沟槽内和半导体层内的硅材料内。 对沟槽中的硅材料进行图案化非晶化处理,然后进行再结晶退火,使得沟槽中的硅材料以与硅衬底相同的结晶取向重结晶。 所得到的结构是在具有不同晶体取向的同一平面上的隔离半导体区域以及用于器件形成的每个半导体区域内的隔离部分的半导体晶片。
    • 4. 发明申请
    • TEXT CONTENT SENSITIVE NON-TEXT CHECKER
    • 文本内容敏感的非文本检查器
    • US20120096022A1
    • 2012-04-19
    • US12907484
    • 2010-10-19
    • Brent AndersonJed Rankin
    • Brent AndersonJed Rankin
    • G06F17/30
    • G06Q10/107
    • A document reminder system comprising a data base for storing a predetermined word or sequence of words; a system for scanning displayed content text for said predetermined word or sequence of words and a non text document identified by said word or sequence of words; a module for comparing said displayed content text as it is scanned for a match with said stored predetermined word or sequence of words; a module coupled to a data base of non text content to search for said identified non text document; and a generating module for selectively generating an indicator in the event the non text content is located.
    • 一种文件提醒系统,包括用于存储预定单词或单词序列的数据库; 用于扫描所述预定单词或单词序列的显示内容文本的系统和由所述单词或单词序列识别的非文本文档; 用于在扫描所述显示的内容文本以与所述存储的预定单词或单词序列匹配时比较所述模块; 耦合到非文本内容的数据库以搜索所述识别的非文本文档的模块; 以及生成模块,用于在非文本内容所在的情况下选择性地生成指示符。
    • 6. 发明授权
    • MUGFET with optimized fill structures
    • MUGFET具有优化的填充结构
    • US07888736B2
    • 2011-02-15
    • US11846825
    • 2007-08-29
    • Brent AndersonAndres BryantEdward J. Nowak
    • Brent AndersonAndres BryantEdward J. Nowak
    • H01L27/12
    • H01L27/0629H01L21/823431H01L27/0886H01L29/66795H01L29/785
    • A semiconductor structure includes active multi-gate fin-type field effect transistor (MUGFET) structures and inactive MUGFET fill structures between the active MUGFET structures. The active MUGFET structures comprise transistors that change conductivity depending upon voltages within gates of the active MUGFET structures. Conversely, the inactive MUGFET fill structures comprise passive devices that do not change conductivity irrespective of voltages within gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures are parallel to the gates of the inactive MUGFET fill structures, and the fins of the active MUGFET structures are the same size as the fins of the inactive MUGFET fill structures. The active MUGFET structures have the same pitch as the gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures comprise active doping agents, but the inactive MUGFET fill structures do not contain the active doping agents.
    • 半导体结构包括有源多栅极鳍型场效应晶体管(MUGFET)结构和在活性MUGFET结构之间的无活性MUGFET填充结构。 活性MUGFET结构包括根据活性MUGFET结构的门内的电压改变导电性的晶体管。 相反,无活性的MUGFET填充结构包括不影响无活性MUGFET填充结构的门内的电压的电导率的无源器件。 活动MUGFET结构的门平行于非活性MUGFET填充结构的门,并且活动MUGFET结构的翅片与非活性MUGFET填充结构的翅片的尺寸相同。 活动的MUGFET结构具有与非活性MUGFET填充结构的门相同的间距。 活性MUGFET结构的栅极包含活性掺杂剂,但是不活泼的MUGFET填充结构不含活性掺杂剂。