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    • 1. 发明授权
    • Radiation detector with optical waveguide and neutron scintillating material
    • 具有光波导和中子闪烁材料的辐射探测器
    • US08314399B2
    • 2012-11-20
    • US12781206
    • 2010-05-17
    • Brent Allen ClothierAdrian IvanChulmin JooDaniel Bruno McDevitt
    • Brent Allen ClothierAdrian IvanChulmin JooDaniel Bruno McDevitt
    • G01T3/00
    • G01T1/202G01T3/06
    • A radiation detector includes a neutron sensing element comprising a neutron scintillating composite material that emits a first photon having a first wavelength and an optical waveguide material having a wavelength-shifting dopant dispersed therein that absorbs the first photon emitted by the neutron scintillating composite material and emits a second photon having a second, different wavelength, and a functionalized reflective layer at an interface between the neutron scintillating composite material and the optical waveguide material. The functionalized reflective layer allows the first photon emitted by the neutron scintillating composite material to pass through and into the optical waveguide material, but prevents the second photon emitted by the optical waveguide material from passing through and into the neutron scintillating composite material. The photons emitted from the neutron sensing element are collected and channeled through the optical waveguide material and into a photosensing element optically coupled to the neutron sensing element.
    • 辐射检测器包括中子感测元件,其包括发射具有第一波长的第一光子的中子闪烁复合材料和分散在其中的波长迁移掺杂剂的光波导材料,其吸收由中子闪烁复合材料发射的第一光子并发射 具有第二不同波长的第二光子和在中子闪烁复合材料和光波导材料之间的界面处的官能化反射层。 功能化反射层允许由中子闪烁复合材料发射的第一光子通过并进入光波导材料,但是防止由光波导材料发射的第二光子通过并进入中子闪烁复合材料。 从中子感测元件发射的光子被收集并引导通过光波导材料并且被光耦合到中子感测元件上的光敏元件。
    • 2. 发明申请
    • RADIATION DETECTOR WITH OPTICAL WAVEGUIDE AND NEUTRON SCINTILLATING MATERIAL
    • 具有光波导和中子闪烁材料的辐射探测器
    • US20100276602A1
    • 2010-11-04
    • US12781206
    • 2010-05-17
    • Brent Allen ClothierAdrian IvanChulmin JooDaniel Bruno McDevitt
    • Brent Allen ClothierAdrian IvanChulmin JooDaniel Bruno McDevitt
    • G01T1/20
    • G01T1/202G01T3/06
    • A radiation detector includes a neutron sensing element comprising a neutron scintillating composite material that emits a first photon having a first wavelength and an optical waveguide material having a wavelength-shifting dopant dispersed therein that absorbs the first photon emitted by the neutron scintillating composite material and emits a second photon having a second, different wavelength, and a functionalized reflective layer at an interface between the neutron scintillating composite material and the optical waveguide material. The functionalized reflective layer allows the first photon emitted by the neutron scintillating composite material to pass through and into the optical waveguide material, but prevents the second photon emitted by the optical waveguide material from passing through and into the neutron scintillating composite material. The photons emitted from the neutron sensing element are collected and channeled through the optical waveguide material and into a photosensing element optically coupled to the neutron sensing element.
    • 辐射检测器包括中子感测元件,其包括发射具有第一波长的第一光子的中子闪烁复合材料和分散在其中的波长迁移掺杂剂的光波导材料,其吸收由中子闪烁复合材料发射的第一光子并发射 具有第二不同波长的第二光子和在中子闪烁复合材料和光波导材料之间的界面处的官能化反射层。 功能化反射层允许由中子闪烁复合材料发射的第一光子通过并进入光波导材料,但是防止由光波导材料发射的第二光子通过并进入中子闪烁复合材料。 从中子感测元件发射的光子被收集并引导通过光波导材料并且被光耦合到中子感测元件上的光敏元件。
    • 3. 发明授权
    • Semiconductor material for radiation absorption and detection
    • 用于辐射吸收和检测的半导体材料
    • US08178008B2
    • 2012-05-15
    • US12211894
    • 2008-09-17
    • Brent Allen ClothierAdrian IvanDaniel Bruno McDevitt
    • Brent Allen ClothierAdrian IvanDaniel Bruno McDevitt
    • H01M4/88
    • G01T3/00H01L31/032H01L31/036
    • A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M12+, M22+, M32+, . . . )(G1V, G2V, G3V, . . . ) and exhibiting an antifluorite-type order, where Li=1, (M12++M22++M32++ . . . )=1, and (G1V+G2V+G3V+ . . . )=1. The material provides two useful characteristics: [1] a high Li-site density, which when enriched in 6Li, produces exceptional neutron-absorbing capabilities and [2] a semiconducting band-gap for the efficient conversion of absorbed photon and neutron energies into electrical currents. These characteristics can be exploited in applications for power generation or the spectroscopic detection of gamma and neutron radiation. The material can be tailored so as to detect only gamma photons, detect only neutron particles, or simultaneously detect gamma photons and neutron particles.
    • 一种用于辐射吸收和检测的半导体材料,其包含Li(M12 +,M22 +,M32 +,...)(G1V,G2V,G3V,...)的化学计量组成,并显示出耐氟石型次序,其中Li = 1, M12 ++ M22 ++ M32 ++ ...)= 1,(G1V + G2V + G3V + ...)= 1。 该材料提供了两个有用的特征:[1]高Li位密度,当富集6Li时,产生特殊的中子吸收能力和[2]半导体带隙,用于有效地将吸收的光子和中子能转化为电 电流。 这些特性可用于发电或伽马和中子辐射的光谱检测应用。 可以调整材料,以便仅检测伽马光子,仅检测中子粒子,或同时检测伽马光子和中子粒子。
    • 4. 发明申请
    • SPECTROSCOPIC FAST NEUTRON DETECTION AND DISCRIMINATING USING LI-BASED SEMICONDUCTORS
    • 利用基于Li的半导体进行光谱快速中和检测和分辨
    • US20100327170A1
    • 2010-12-30
    • US12491704
    • 2009-06-25
    • Adrian IvanDaniel Bruno McDevittBrent Allen Clothier
    • Adrian IvanDaniel Bruno McDevittBrent Allen Clothier
    • G01T3/08H01L31/08
    • G01T3/085H01L31/08H01L31/115
    • A neutron sensing material detector includes an anode; a cathode; and a semiconductor material disposed between the anode and the cathode. An electric field is applied between the anode and cathode. The semiconductor material is composed of a ternary composition of stoichiometry LiM2+GV and exhibits an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M2+=1, and GV=1. Electron-hole pairs are created by absorption of radiation, and the electron-hole pairs are detected by the current they generate between the anode and the cathode. The anode may include an array of pixels to provide improved spatial and energy resolution over the face of the anode. The signal value for each pixel can be mapped to a color or grey scale normalized to all the other pixel signal values for a particular moment in time. A guard ring or guard grid may be provided to reduce leakage current.
    • 中子感测材料检测器包括阳极; 阴极 以及设置在阳极和阴极之间的半导体材料。 在阳极和阴极之间施加电场。 半导体材料由化学计量LiM2 + GV的三元组成组成,呈现出萤石型排序,化学计量分数为Li = 1,M2 + = 1,GV = 1。 通过吸收辐射产生电子 - 空穴对,并且通过它们在阳极和阴极之间产生的电流来检测电子 - 空穴对。 阳极可以包括像素阵列,以在阳极的表面上提供改善的空间和能量分辨率。 每个像素的信号值可以映射到对于特定时刻的所有其他像素信号值进行归一化的颜色或灰度。 可以提供保护环或保护栅,以减少泄漏电流。
    • 5. 发明申请
    • SEMICONDUCTOR MATERIAL FOR RADIATION ABSORPTION AND DETECTION
    • 用于辐射吸收和检测的半导体材料
    • US20100065791A1
    • 2010-03-18
    • US12211894
    • 2008-09-17
    • Brent Allen ClothierAdrian IvanDaniel Bruno McDevitt
    • Brent Allen ClothierAdrian IvanDaniel Bruno McDevitt
    • H01B1/00
    • G01T3/00H01L31/032H01L31/036
    • A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M12+, M22+, M32+, . . . )(G1V, G2V, G3V, . . . ) and exhibiting an antifluorite-type order, where Li=1, (M12++M22++M32++ . . . )=1, and (G1V+G2V+G3V+ . . . )=1. The material provides two useful characteristics: [1] a high Li-site density, which when enriched in 6Li, produces exceptional neutron-absorbing capabilities and [2] a semiconducting band-gap for the efficient conversion of absorbed photon and neutron energies into electrical currents. These characteristics can be exploited in applications for power generation or the spectroscopic detection of gamma and neutron radiation. The material can be tailored so as to detect only gamma photons, detect only neutron particles, or simultaneously detect gamma photons and neutron particles.
    • 一种用于辐射吸收和检测的半导体材料,其包含Li(M12 +,M22 +,M32 +,...)(G1V,G2V,G3V,...)的化学计量组成,并显示出耐氟石型次序,其中Li = 1, M12 ++ M22 ++ M32 ++ ...)= 1,(G1V + G2V + G3V + ...)= 1。 该材料提供了两个有用的特征:[1]高Li位密度,当富集6Li时,产生特殊的中子吸收能力和[2]半导体带隙,用于有效地将吸收的光子和中子能转化为电 电流。 这些特性可用于发电或伽马和中子辐射的光谱检测应用。 可以调整材料,以便仅检测伽马光子,仅检测中子粒子,或同时检测伽马光子和中子粒子。
    • 10. 发明授权
    • Spectroscopic fast neutron detection and discrimination using Li-Based semiconductors
    • 使用Li-based半导体的光谱快中子检测和鉴别
    • US08044358B2
    • 2011-10-25
    • US12491704
    • 2009-06-25
    • Adrian IvanDaniel Bruno McDevittBrent Allen Clothier
    • Adrian IvanDaniel Bruno McDevittBrent Allen Clothier
    • G01T3/08
    • G01T3/085H01L31/08H01L31/115
    • A neutron sensing material detector includes an anode; a cathode; and a semiconductor material disposed between the anode and the cathode. An electric field is applied between the anode and cathode. The semiconductor material is composed of a ternary composition of stoichiometry LiM2+GV and exhibits an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M2+=1, and GV=1. Electron-hole pairs are created by absorption of radiation, and the electron-hole pairs are detected by the current they generate between the anode and the cathode. The anode may include an array of pixels to provide improved spatial and energy resolution over the face of the anode. The signal value for each pixel can be mapped to a color or grey scale normalized to all the other pixel signal values for a particular moment in time. A guard ring or guard grid may be provided to reduce leakage current.
    • 中子感测材料检测器包括阳极; 阴极 以及设置在阳极和阴极之间的半导体材料。 在阳极和阴极之间施加电场。 半导体材料由化学计量LiM2 + GV的三元组成组成,呈现出萤石型排序,化学计量分数为Li = 1,M2 + = 1,GV = 1。 通过吸收辐射产生电子 - 空穴对,并且通过它们在阳极和阴极之间产生的电流来检测电子 - 空穴对。 阳极可以包括像素阵列,以在阳极的表面上提供改善的空间和能量分辨率。 每个像素的信号值可以映射到对于特定时刻的所有其他像素信号值进行归一化的颜色或灰度。 可以提供保护环或保护栅,以减少泄漏电流。