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1. 发明授权

US06603241B1 Acoustic mirror materials for acoustic devices 有权
标题翻译：用于声学设备的声镜材料
公开(公告)号：US06603241B1
公开(公告)日：2003-08-05
申请号：US09576807
申请日：2000-05-23
申请人： Bradley Paul Barber , Harold Alexis Huggins , Ronald Eugene Miller , Donald Winslow Murphy , Yiu-Huen Wong
发明人： Bradley Paul Barber , Harold Alexis Huggins , Ronald Eugene Miller , Donald Winslow Murphy , Yiu-Huen Wong
IPC分类号： H03H925
CPC分类号： H03H9/175
摘要： A reflector stack or acoustic mirror arrangement for an acoustic device is described which may attain the highest possible impedance mismatch between alternating higher and lower impedance reflecting layers of the stack, so as to maximize bandwidth. The arrangement may also reduce manufacturing costs by requiring fewer layers for the device, as compared to conventional acoustic mirrors. The thinner reflecting stack is accordingly fabricated in reduced time to lower cost, by incorporating materials providing a larger acoustic impedance mismatch than those currently obtainable. The bandwidth of the resulting acoustic resonator device may be widened, particularly when a low density material such as aerogel, CVD SiO2 and/or sputter deposited SiO2 is applied as topmost layer in the reflector stack/acoustic mirror arrangement of the device.
摘要翻译：描述了用于声学装置的反射器叠层或声镜装置，其可以在堆叠的交替的较高和较低阻抗反射层之间达到最高可能的阻抗失配，从而最大化带宽。与传统的声反射镜相比，该装置还可以通过要求较少的器件层来降低制造成本。因此，通过结合提供比目前可获得的更大的声阻抗失配的材料，减少了较薄的反射叠层，从而降低了成本。特别是当诸如气凝胶，CVD SiO 2和/或溅射沉积的SiO 2之类的低密度材料作为装置的反射器叠层/声镜装置中的最顶层被施加时，所得到的声共振器装置的带宽可能变宽。

2. 发明授权

US08225472B2 Methods of fabricating a membrane with improved mechanical integrity 有权
标题翻译：制造具有改善的机械完整性的膜的方法
公开(公告)号：US08225472B2
公开(公告)日：2012-07-24
申请号：US13012936
申请日：2011-01-25
申请人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
发明人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
IPC分类号： H04R17/10 , B05D5/12
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Forming a thin film acoustic device by patterning a layer of non-conducting material on a first side of a substrate to expose a portion of the first substrate side; depositing layers of conducting material on the layer of non-conducting material and the exposed portion of the first substrate side; depositing a layer of piezoelectric material on the layers of conducting material; depositing and patterning additional layers of material on the layer of piezoelectric material to form a first device electrode; depositing and patterning a masking layer on a second side of the substrate to expose a portion of the second substrate side; etching away the exposed substrate portion to expose the patterned layer of non-conducting material and a portion of the layers of conducting material; and etching away the exposed portion of the layers of conducting material to form a second device electrode.
摘要翻译：通过在衬底的第一侧上图案化非导电材料层以暴露第一衬底侧的一部分来形成薄膜声学器件; 在非导电材料层和第一衬底侧的暴露部分上沉积导电材料层; 在导电材料层上沉积一层压电材料; 在所述压电材料层上沉积和图形附加的材料层以形成第一器件电极; 在所述衬底的第二侧上沉积和图案化掩模层以暴露所述第二衬底侧的一部分; 蚀刻掉暴露的衬底部分以暴露非导电材料的图案化层和导电材料层的一部分; 并蚀刻掉导电材料层的暴露部分以形成第二器件电极。

3. 发明授权

US07895720B2 Methods of fabricating a membrane with improved mechanical integrity 有权
标题翻译：制造具有改善的机械完整性的膜的方法
公开(公告)号：US07895720B2
公开(公告)日：2011-03-01
申请号：US12185305
申请日：2008-08-04
申请人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
发明人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
IPC分类号： H04R17/00 , B44C1/22
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.
摘要翻译：公开了在图案化的底层的边缘或台阶上制造坚固的薄膜的方法。新颖的方法减少了电极台阶或边缘对膜完整性的负面影响。因此，该方法特别适用于膜释放技术。消除或减少台阶或边缘的高度以增加膜的机械完整性。

4. 发明申请

US20090049670A1 METHODS OF FABRICATING A MEMBRANE WITH IMPROVED MECHANICAL INTEGRITY 有权
标题翻译：用改进的机械完整性制造膜的方法
公开(公告)号：US20090049670A1
公开(公告)日：2009-02-26
申请号：US12185305
申请日：2008-08-04
申请人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
发明人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
IPC分类号： H01L41/22
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.
摘要翻译：公开了在图案化的底层的边缘或台阶上制造坚固的薄膜的方法。新颖的方法减少了电极台阶或边缘对膜完整性的负面影响。因此，该方法特别适用于膜释放技术。消除或减少台阶或边缘的高度以增加膜的机械完整性。

5. 发明申请

US20110115338A1 Methods of Fabricating a Membrane With Improved Mechanical Integrity 有权
标题翻译：改进机械完整性制造膜的方法
公开(公告)号：US20110115338A1
公开(公告)日：2011-05-19
申请号：US13012936
申请日：2011-01-25
申请人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
发明人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
IPC分类号： G10K9/122 , C23F1/02
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.
摘要翻译：公开了在图案化的底层的边缘或台阶上制造坚固的薄膜的方法。新颖的方法减少了电极台阶或边缘对膜完整性的负面影响。因此，该方法特别适用于膜释放技术。消除或减少台阶或边缘的高度以增加膜的机械完整性。

6. 发明授权

US07435613B2 Methods of fabricating a membrane with improved mechanical integrity 有权
标题翻译：制造具有改善的机械完整性的膜的方法
公开(公告)号：US07435613B2
公开(公告)日：2008-10-14
申请号：US09781820
申请日：2001-02-12
申请人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
发明人： Bradley Paul Barber , Linus Albert Fetter , Harold Alexis Huggins , Ronald Eugene Miller
IPC分类号： H01L21/00
CPC分类号： H03H3/007 , H01L41/314 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.
摘要翻译：公开了在图案化的底层的边缘或台阶上制造坚固的薄膜的方法。新颖的方法减少了电极台阶或边缘对膜完整性的负面影响。因此，该方法特别适用于膜释放技术。消除或减少台阶或边缘的高度以增加膜的机械完整性。

7. 发明授权

US06743731B1 Method for making a radio frequency component and component produced thereby 有权
标题翻译：制造无线电频率分量的方法和由此产生的分量
公开(公告)号：US06743731B1
公开(公告)日：2004-06-01
申请号：US09715651
申请日：2000-11-17
申请人： Harold Alexis Huggins
发明人： Harold Alexis Huggins
IPC分类号： H01L21302
CPC分类号： H01L21/6835 , H01F17/0006 , H01L2221/68345 , H01L2924/19041
摘要： A method for making a radio frequency (RF) component includes forming a dielectric layer on a semiconductor substrate and forming and patterning a conductive layer on the dielectric layer to define the RF component. The dielectric layer may include SiN, the conductive layer may include aluminum, and the semiconductor substrate may include silicon, for example. At least one opening may be formed through the RF component at least to the semiconductor substrate. Moreover, the at least one opening may either extend into the semiconductor substrate or substantially terminate at a surface of the semiconductor substrate. The RF component may then be released from the semiconductor substrate by exposing the semiconductor substrate to an etchant passing through the at least one opening to the semiconductor substrate. Releasing the RF component may include exposing the semiconductor substrate to a dry etchant, such as XeF2, for example.
摘要翻译：一种制造射频（RF）部件的方法包括在半导体衬底上形成电介质层，并在电介质层上形成和图形化导电层以限定RF部件。介电层可以包括SiN，导电层可以包括铝，并且半导体衬底可以包括例如硅。至少一个开口可以通过RF部件至少形成到半导体衬底。此外，至少一个开口可以延伸到半导体衬底中或者基本上终止于半导体衬底的表面。然后可以通过将半导体衬底暴露于穿过至少一个开口的蚀刻剂到半导体衬底而将RF部件从半导体衬底释放。释放RF部件可以包括例如将半导体衬底暴露于干蚀刻剂，例如XeF2。

8. 发明授权

US6153268A Method for producing oriented piezoelectric films 有权
标题翻译：制造取向压电薄膜的方法
公开(公告)号：US6153268A
公开(公告)日：2000-11-28
申请号：US363758
申请日：1999-07-29
申请人： Harold Alexis Huggins
发明人： Harold Alexis Huggins
IPC分类号： C23C14/06 , C23C14/08 , C23C14/34 , C30B23/02 , H01L41/22 , B05D1/04
CPC分类号： C23C14/0617 , C23C14/3471 , C30B23/02 , C30B29/16 , H01L41/314
摘要： Highly oriented thin films exhibiting good piezoelectric effects are formed in a reaction chamber. This is done by bombarding a target comprising a piezoelectric material. Dislodged particles from the target are ionized and then electrostatically attracted to the surface of a substrate where they are neutralized and deposited in an ordered way.
摘要翻译：在反应室中形成表现出良好压电效应的高取向薄膜。这是通过轰击包含压电材料的靶来完成的。从靶中移出的颗粒被电离，然后静电吸引到基底的表面，在那里它们被中和并以有序的方式沉积。

9. 发明授权

US06355498B1 Thin film resonators fabricated on membranes created by front side releasing 有权
标题翻译：薄膜谐振器制造在由前端释放产生的膜上
公开(公告)号：US06355498B1
公开(公告)日：2002-03-12
申请号：US09637069
申请日：2000-08-11
申请人： Edward Chan , Harold Alexis Huggins , Jungsang Kim , Hyongsok Soh
发明人： Edward Chan , Harold Alexis Huggins , Jungsang Kim , Hyongsok Soh
IPC分类号： H01L2100
CPC分类号： H03H9/173 , B81B2201/0271 , B81C1/00142 , B81C2201/014 , H03H3/02 , H03H2003/021
摘要： A new bulk resonator may be fabricated by a process that is readily incorporated in the traditional fabrication techniques used in the fabrication of monolithic integrated circuits on a wafer. The resonator is decoupled from the wafer by a cavity etched under the resonator using selective etching through front openings (vias) in a resonator membrane. In a typical structure the resonator is formed over a silicon wafer by first forming a first electrode, coating a piezoelectric layer over both the electrode and the wafer surface and forming a second electrode opposite the first on the surface of the piezoelectric layer. After this structure is complete, a number of vias are etched in the piezoelectric layer exposing the surface under the piezoelectric layer to a selective etching process that selectively attacks the surface below the piezoelectric layer creating a cavity under the resonator.
摘要翻译：新的体谐振器可以通过容易地结合在晶片上制造单片集成电路中的传统制造技术中的工艺来制造。谐振器通过使用谐振膜内的前开口（通孔）进行选择性蚀刻而在谐振器下方蚀刻的腔体与晶片分离。在典型的结构中，谐振器通过首先形成第一电极而在硅晶片上形成，在电极和晶片表面上涂覆压电层，并形成与压电层表面上的第一电极相对的第二电极。在该结构完成之后，在将压电层下方的表面暴露的压电层中蚀刻多个通孔至选择性蚀刻工艺，该选择性蚀刻工艺选择性地攻击压电层下方的表面，从而在谐振器下形成空腔。

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