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1. 发明申请

US20020068488A1 Stable electrical contact for silicon carbide devices 有权
标题翻译：碳化硅器件稳定的电气接触
公开(公告)号：US20020068488A1
公开(公告)日：2002-06-06
申请号：US09940064
申请日：2001-08-27
申请人： Boston MicroSystems, Inc.
发明人： Harry L. Tuller , Marlene A. Spears , Richard Mlcak
IPC分类号： H01L029/06 , H01R004/28
CPC分类号： H01L29/45 , H01L21/048 , H01L21/0485 , H01L21/0495 , H01L29/1608 , H01L29/47
摘要： An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3SiC2 that is deposited on the silicon carbide component.
摘要翻译：用于碳化硅部件的电接触包括与碳化硅处于热力学平衡的材料。电接触通常由沉积在碳化硅部件上的Ti 3 SiC 2形成。

2. 发明申请

US20030119220A1 Micromechanical piezoelectric device 有权
标题翻译：微机电压电装置
公开(公告)号：US20030119220A1
公开(公告)日：2003-06-26
申请号：US10284048
申请日：2002-10-29
申请人： Boston MicroSystems, Inc.
发明人： Richard Mlcak , Dharanipal Doppalapudi , Harry L. Tuller
IPC分类号： H01L021/00
CPC分类号： B81B3/0089 , B81B3/0094 , B81B2201/06 , B81B2203/0127 , H01L41/094 , H01L41/18 , H01L41/316 , H01L41/331 , H01L41/332
摘要： A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.
摘要翻译：微机械装置包括单晶微加工微机械结构。微机械结构的至少一部分能够执行机械运动。压电外延层覆盖能够执行机械运动的微机械结构的所述部分的至少一部分。微机械结构和压电外延层由不同的材料组成。形成至少一个导电层以覆盖至少部分压电外延层。

3. 发明申请

US20020137348A1 ELECTROCHEMICAL ETCHING PROCESS 失效
标题翻译：电化学蚀刻工艺
公开(公告)号：US20020137348A1
公开(公告)日：2002-09-26
申请号：US09817729
申请日：2001-03-26
申请人： Boston MicroSystems, Inc.
发明人： Richard Mlcak
IPC分类号： H01L021/311
CPC分类号： H01L21/3063
摘要： A method of electrochemically etching a device, including forming a semiconductor substrate having a p-type semiconductor region on an n-type semiconductor region. A discrete semiconductor region is formed on the p-type semiconductor region and is isolated from the n-type semiconductor region. The n-type semiconductor region is exposed to an electrolyte with an electrical bias applied between the n-type semiconductor region and the electrolyte. The n-type semiconductor region is also exposed to radiation having energy sufficient to excite electron-hole pairs. In addition, a p-n junction reverse bias is applied between the p-type semiconductor region and the n-type semiconductor region to prevent the p-type semiconductor region and the discrete semiconductor region from etching while portions of the n-type semiconductor region exposed to the electrolyte and the radiation are etched.
摘要翻译：一种电化学蚀刻器件的方法，包括在n型半导体区域上形成具有p型半导体区域的半导体衬底。离散半导体区域形成在p型半导体区域上并与n型半导体区域隔离。 n型半导体区域暴露于在n型半导体区域和电解质之间施加电偏压的电解质。 n型半导体区域也暴露于具有足以激发电子 - 空穴对的能量的辐射。此外，在p型半导体区域和n型半导体区域之间施加pn结反向偏压，以防止p型半导体区域和离散半导体区域被蚀刻，同时n型半导体区域的部分暴露于电解质和辐射被蚀刻。

4. 发明申请

US20030193073A1 P-N JUNCTION SENSOR 有权
标题翻译： P-N连接传感器
公开(公告)号：US20030193073A1
公开(公告)日：2003-10-16
申请号：US10123900
申请日：2002-04-16
申请人： Boston MicroSystems, Inc.
发明人： Harry L. Tuller , Richard Mlcak
IPC分类号： H01L029/76
CPC分类号： G01N27/12
摘要： A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.
摘要翻译：一种传感器，包括用于在反向电偏压下进行的p-n结。导电层跨越p-n结形成，以提供穿过p-n结的替代导电路径。在选择的物质存在下，导电层在大气中的电导率不同于不存在所选物质的导电层，其中导电层的导电性指示所选物质的存在或不存在。

5. 发明申请

US20020070841A1 Semiconductor piezoresistor 有权
公开(公告)号：US20020070841A1
公开(公告)日：2002-06-13
申请号：US09879692
申请日：2001-06-12
申请人： Boston MicroSystems, Inc.
发明人： Dharanipal Doppalapudi , Theodore D. Moustakas , Richard Mlcak , Harry L. Tuller
IPC分类号： G01L001/22
CPC分类号： H01L29/155 , G01L1/2293 , Y10T29/49099 , Y10T29/49101
摘要： A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.

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