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    • 1. 发明授权
    • Method of fabricating self-aligned metal barriers by atomic layer deposition on the copper layer
    • 通过原子层沉积在铜层上制造自对准金属屏障的方法
    • US06905964B2
    • 2005-06-14
    • US10339185
    • 2003-01-09
    • Boon Kiat LimAlex See
    • Boon Kiat LimAlex See
    • H01L21/285H01L21/44H01L21/4763H01L21/768
    • H01L21/76849H01L21/28562
    • An improved and new process for fabricating self-aligned metal barriers by atomic layer deposition, ALD, capable of producing extremely thin, uniform, and conformal metal barrier films, selectively depositing on copper, not on silicon dioxide interlevel dielectric, in multi-layer dual damascene trench/via processing. Silicon nitride is presently used as a insulating copper barrier. However, silicon nitride has a relatively high dielectric constraint, which deteriorates ICs with increased RC delay. Copper metal barriers of niobium and tantalum have been deposited by atomic layer deposition on copper. With high deposition selectivity, the barrier metal is only deposited over copper, not on silicon dioxide, which eliminates the need of an insulating barrier of silicon nitride.
    • 一种通过原子层沉积制造自对准金属屏障的改进和新工艺,ALD能够生产极薄,均匀和保形的金属阻挡膜,选择性地沉积在铜上,而不是在二氧化硅层间电介质上沉积在多层双层 大马士革沟/通孔加工。 氮化硅目前被用作绝缘铜屏障。 然而,氮化硅具有相对较高的介电约束,其使具有增加的RC延迟的IC劣化。 铌和钽的铜金属屏障已经通过原子层沉积沉积在铜上。 具有高的沉积选择性,阻挡金属仅沉积在铜上,而不是在二氧化硅上沉积,这消除了氮化硅的绝缘势垒的需要。