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1. 发明授权

US06693032B2 Method of forming a contact structure having an anchoring portion 失效
标题翻译：形成具有锚定部分的接触结构的方法
公开(公告)号：US06693032B2
公开(公告)日：2004-02-17
申请号：US09892362
申请日：2001-06-27
申请人： Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
发明人： Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
IPC分类号： H01L213205
CPC分类号： H01L23/485 , H01L21/28061 , H01L21/76805 , H01L23/5226 , H01L23/53271 , H01L29/4925 , H01L29/4933 , H01L29/4983 , H01L2924/0002 , Y10S257/905 , Y10S257/906 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： A semiconductor device adopting an interlayer contact structure between upper and lower conductive layers and a method of manufacturing the semiconductor device adopting the structure are provided. The lower conductive layer includes a first conductive layer and a first silicide layer stacked together. The upper conductive layer includes a second conductive layer doped with impurities and a second silicide layer stacked together. In the interlayer contact structure, the first and second conductive layers are in direct contact with each other. This decreases the contact resistance between the two conductive layers and improves the electrical properties of the device.
摘要翻译：提供了采用上下导电层之间的层间接触结构的半导体器件以及采用该结构制造半导体器件的方法。下导电层包括堆叠在一起的第一导电层和第一硅化物层。上导电层包括掺杂有杂质的第二导电层和堆叠在一起的第二硅化物层。在层间接触结构中，第一和第二导电层彼此直接接触。这降低了两个导电层之间的接触电阻并改善了器件的电性能。

2. 发明授权

US06476489B1 Apparatus and manufacturing method for semiconductor device adopting NA interlayer contact structure 失效
标题翻译：采用NA层间接触结构的半导体器件的装置和制造方法
公开(公告)号：US06476489B1
公开(公告)日：2002-11-05
申请号：US09258292
申请日：1999-02-26
申请人： Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
发明人： Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
IPC分类号： H01L2348
CPC分类号： H01L23/485 , H01L21/28061 , H01L21/76805 , H01L23/5226 , H01L23/53271 , H01L29/4925 , H01L29/4933 , H01L29/4983 , H01L2924/0002 , Y10S257/905 , Y10S257/906 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： A semiconductor device adopting an interlayer contact structure between upper and lower conductive layers and a method of manufacturing the semiconductor device adopting the structure are provided. The lower conductive layer includes a first conductive layer and a first silicide layer stacked together. The upper conductive layer includes a second conductive layer doped with impurities and a second silicide layer stacked together. In the interlayer contact structure, the first and second conductive layers are in direct contact with each other. This decreases the contact resistance between the two conductive layers and improves the electrical properties of the device.
摘要翻译：提供了采用上下导电层之间的层间接触结构的半导体器件以及采用该结构制造半导体器件的方法。下导电层包括堆叠在一起的第一导电层和第一硅化物层。上导电层包括掺杂有杂质的第二导电层和堆叠在一起的第二硅化物层。在层间接触结构中，第一和第二导电层彼此直接接触。这降低了两个导电层之间的接触电阻并改善了器件的电性能。

3. 发明授权

US06239493B1 Apparatus and manufacturing method for semiconductor device adopting an interlayer contact structure 有权
公开(公告)号：US06239493B1
公开(公告)日：2001-05-29
申请号：US09258292
申请日：1999-02-26
申请人： Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
发明人： Bong-young Yoo , Dae-hong Ko , Nae-in Lee , Young-wook Park
IPC分类号： H01L2348
摘要： A semiconductor device adopting an interlayer contact structure between upper and lower conductive layers and a method of manufacturing the semiconductor device adopting the structure are provided. The lower conductive layer includes a first conductive layer and a first silicide layer stacked together. The upper conductive layer includes a second conductive layer doped with impurities and a second silicide layer stacked together. In the interlayer contact structure, the first and second conductive layers are in direct contact with each other. This decreases the contact resistance between the two conductive layers and improves the electrical properties of the device.

4. 发明授权

US06211082B1 Chemical vapor deposition of tungsten using nitrogen-containing gas 失效
标题翻译：使用含氮气体化学气相沉积钨
公开(公告)号：US06211082B1
公开(公告)日：2001-04-03
申请号：US09021462
申请日：1998-02-10
申请人： Bong-young Yoo , Byung-Lyul Park , Dae-hong Ko , Sang-in Lee
发明人： Bong-young Yoo , Byung-Lyul Park , Dae-hong Ko , Sang-in Lee
IPC分类号： H01L2144
CPC分类号： C23C16/08 , H01L21/28568
摘要： A tungsten or other metal layer is chemical vapor deposited using a source gas containing tungsten, a reducing gas and a nitrogen-containing gas. The nitrogen-containing gas can act as a surface roughness reducing gas that reduces the roughness of the tungsten layer compared to a tungsten layer that is chemical vapor deposited using the source gas containing tungsten and the reducing gas, but without using the surface roughness reducing gas. Viewed in another way, the nitrogen-containing gas acts as a growth rate controlling gas that produces uniform growth of the tungsten layer in a plurality of directions compared to a tungsten layer that is deposited using the source gas containing tungsten and the reducing gas, but without using the growth rate controlling gas.
摘要翻译：使用含有钨，还原气体和含氮气体的源气体化学气相沉积钨或其它金属层。与使用含有钨和还原气体的源气体进行化学气相沉积的钨层相比，含氮气体可以用作表面粗糙度降低气体，其降低钨层的粗糙度，但不使用表面粗糙度还原气体。以另一种方式看，与使用含钨和还原气体的源气体沉积的钨层相比，含氮气体充当生长速率控制气体，其产生钨层在多个方向上的均匀生长，但是而不用生长速率控制气体。

5. 发明授权

US06372616B1 Method of manufacturing an electrical interconnection of a semiconductor device using an erosion protecting plug in a contact hole of interlayer dielectric layer 有权
标题翻译：使用层间电介质层的接触孔中的侵蚀保护插头制造半导体器件的电互连的方法
公开(公告)号：US06372616B1
公开(公告)日：2002-04-16
申请号：US09670818
申请日：2000-09-28
申请人： Bong-young Yoo , Hyeon-deok Lee , Il-gu Kim
发明人： Bong-young Yoo , Hyeon-deok Lee , Il-gu Kim
IPC分类号： H01L213205
CPC分类号： H01L21/76808
摘要： A method of manufacturing an electrical interconnection of a semiconductor device produces an erosion protecting plug in a contact hole to protect a selected portion of an interlayer dielectric layer when the interlayer dielectric layer is being etched to form a recess for a conductive line. The contact hole is formed in the interlayer dielectric layer. The contact hole is filled with an organic material to form the erosion protecting plug. The organic material is a photoresist material or an organic polymer. A photoresist pattern is formed for exposing the erosion protecting plug and a portion of the interlayer dielectric layer adjacent to the erosion protecting plug. A recess which extends down to the contact hole is formed by etching the portion of the interlayer dielectric layer which is exposed by the photoresist pattern. The erosion protecting plug and the photoresist pattern are then removed. A conductive line filling the recess and a contact filling the contact hole are then formed.
摘要翻译：制造半导体器件的电互连的方法在接触孔中产生侵蚀保护插塞，以便在蚀刻层间电介质层以形成用于导电线的凹槽时保护层间电介质层的选定部分。接触孔形成在层间电介质层中。接触孔填充有机材料以形成侵蚀保护塞。有机材料是光致抗蚀剂材料或有机聚合物。形成光致抗蚀剂图案，用于暴露侵蚀保护塞和与侵蚀保护塞相邻的层间电介质层的一部分。通过蚀刻由光致抗蚀剂图案曝光的层间电介质层的部分来形成向下延伸到接触孔的凹部。然后去除侵蚀保护塞和光致抗蚀剂图案。然后形成填充凹部的导电线和填充接触孔的触点。

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