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1. 发明授权

US11723261B2 Light-emitting component, manufacturing method therefor, mask, and display device 有权
公开(公告)号：US11723261B2
公开(公告)日：2023-08-08
申请号：US17271637
申请日：2020-05-14
申请人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Tongshang Su , Dongfang Wang , Jun Liu , Yingbin Hu , Qinghe Wang , Shengping Du , Liangchen Yan
IPC分类号： H10K71/16 , H10K50/824 , H10K50/11 , H10K71/00
CPC分类号： H10K71/166 , H10K50/11 , H10K50/824 , H10K71/621
摘要： A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.

2. 发明申请

US20210225903A1 ETCHING METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, PROCESS DEVICE AND DISPLAY DEVICE 有权
公开(公告)号：US20210225903A1
公开(公告)日：2021-07-22
申请号：US16305451
申请日：2018-04-27
申请人： BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
发明人： Shengping Du , Tongshang Su , Zhengfeng Huang , Yu Yang , Wang Zhang , Lei Wang , Yun Ma , Lihua Liu , Guangdong Liu , Wen Guo
IPC分类号： H01L27/12
摘要： The present disclosure provides an etching method, a manufacturing method of a thin film transistor, a process device and a display device. The etching method includes: forming a patterned photoresist layer on the surface of a material to be etched, the patterned photoresist layer exposing an area to be etched on the surface of the material to be etched; curing the photoresist layer by adopting a plasma process; and etching the material to be etched by adopting an etching solution corresponding to the material to be etched. The present disclosure can help to solve the problem of undercutting and improve the product yield and product performances.

3. 发明申请

US20210408183A1 DISPLAY PANEL, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE 有权
公开(公告)号：US20210408183A1
公开(公告)日：2021-12-30
申请号：US17342596
申请日：2021-06-09
申请人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wei Li , Bin Zhou , Shengping Du , Qinghua Guo , Tao Sun , Wei Song , Liangchen Yan
IPC分类号： H01L27/32 , H01L51/56
摘要： A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.

4. 发明申请

US20210184126A1 LIGHT-EMITTING COMPONENT, MANUFACTURING METHOD THEREFOR, MASK, AND DISPLAY DEVICE 有权
公开(公告)号：US20210184126A1
公开(公告)日：2021-06-17
申请号：US17271637
申请日：2020-05-14
申请人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Tongshang Su , Dongfang Wang , Jun Liu , Yingbin Hu , Qinghe Wang , Shengping Du , Liangchen Yan
IPC分类号： H01L51/00 , H01L51/52 , H01L51/50
摘要： A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.

5. 发明授权

US11957002B2 Array substrate, method for preparing array substrate, display panel and display apparatus 有权
公开(公告)号：US11957002B2
公开(公告)日：2024-04-09
申请号：US17414751
申请日：2020-12-29
申请人： Hefei Xinsheng Optoelectronics Technology Co., Ltd. , BOE Technology Group Co., Ltd.
发明人： Wei Li , Jingjing Xia , Bin Zhou , Shengping Du , Yang Zhang , Wei Song , Qinghua Guo
IPC分类号： H10K59/122 , H10K59/12 , H10K59/80
CPC分类号： H10K59/122 , H10K59/1201 , H10K59/8792
摘要： An array substrate, a preparing method thereof, a display panel and a display apparatus are disclosed. The array substrate includes: a base substrate (1); a driving circuit structure (2) on the base substrate (1); a planarization layer (3) and a plurality of electrode structures (4) successively located on a side, facing away from the base substrate (1), of the driving circuit structure (2); insulation structures (5) in gap areas between adjacent electrode structures (4); and pixel defining structures (6) on a side, facing away from the base substrate (1), of the insulation structures (5). The thickness of the insulation structures (5) is not smaller than the thickness of the electrode structures (4). An orthographic projection of the pixel defining structures (6) on the base substrate (1) at least completely covers the insulation structures (5).

6. 发明授权

US11309358B2 Display substrate and manufacturing method thereof 有权
公开(公告)号：US11309358B2
公开(公告)日：2022-04-19
申请号：US16063924
申请日：2017-07-03
申请人： BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Shengping Du , Tongshang Su , Zhengfeng Huang , Yu Yang , Yun Ma , Wen Guo , Lihua Liu
IPC分类号： H01L27/32 , G02F1/1362 , G02F1/1368 , H01L51/56
摘要： A display substrate and a manufacturing method thereof are disclosed. The display substrate is divided to have a non-pixel region and a color pixel region. The manufacturing method includes: forming a thin film transistor (TFT) on a base substrate in the non-pixel region; forming a passivation layer on the TFT; forming a color filter on the passivation layer in the color Pixel region; forming a planarization layer on the passivation layer and the color filter; thinning a thickness of a portion of the planarization layer located in the color pixel region; and forming a display electrode on the planarization layer and connecting the display electrode to a drain electrode of the TFT through a via hole.

7. 发明授权

US11903262B2 Display panel, method for manufacturing same, and display device 有权
公开(公告)号：US11903262B2
公开(公告)日：2024-02-13
申请号：US17342596
申请日：2021-06-09
申请人： HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wei Li , Bin Zhou , Shengping Du , Qinghua Guo , Tao Sun , Wei Song , Liangchen Yan
IPC分类号： H10K59/122 , H10K71/00
CPC分类号： H10K59/122 , H10K71/00
摘要： A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.

8. 发明授权

US10439163B2 OLED display panel and manufacture method thereof, display device 有权
公开(公告)号：US10439163B2
公开(公告)日：2019-10-08
申请号：US15768972
申请日：2017-10-13
申请人： BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Tongshang Su , Guangcai Yuan , Dongfang Wang , Bin Zhou , Ce Zhao , Jun Liu , Ning Liu , Kai Xu , Shengping Du
IPC分类号： H01L51/52 , H01L27/32 , H01L51/56 , H01L21/77 , H01L23/31 , G09G3/3225
摘要： An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.

9. 发明申请

US20160209701A1 COLOR FILM SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND DISPLAY DEVICE 审中-公开
标题翻译：彩色胶片底片，液晶显示面板和显示装置
公开(公告)号：US20160209701A1
公开(公告)日：2016-07-21
申请号：US14742976
申请日：2015-06-18
申请人： Boe Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
发明人： Peipei Qin , Shengping Du , Yu Yang , Peilei Xia
IPC分类号： G02F1/1335 , G02B5/20
CPC分类号： G02F1/133514 , G02B5/003 , G02B5/201 , G02F1/133512 , G02F2201/52
摘要： The embodiments of the present invention provide a color film substrate, a liquid crystal display panel and a display device; wherein the color film substrate comprises: a basal substrate, a black matrix and a plurality groups of color filters located on the basal substrate, and a planarization layer located on the black matrix and the color filters; each group of color filters comprises a red filter, a green filter, a blue filter and a blank region defined by the black matrix; the planarization layer filled in the blank region serves as a white filter; wherein the color film substrate further comprises: at least one linear height compensation component located in the blank region; the height compensation component and the black matrix are arranged in a same layer. In this manner, the arrangement of the white filter does not require adding one more composition process; moreover, at least one linear height compensation component located in the blank region is added, while the height compensation component and the black matrix are arranged in a same layer, thus an additional composition process is not required; furthermore, the height compensation component can serve as a diversion dike to enhance a flow energy in the horizontal direction within the blank region for the planarization layer, thereby simplifying the manufacture process of the color film substrate with a red filter, a green filter, a blue filter and a white filter, while improving the flatness of the planarization layer.
摘要翻译：本发明的实施例提供一种彩色胶片基板，液晶显示面板和显示装置; 其中所述彩色胶片基板包括：基底，黑矩阵和位于所述基底基板上的多组滤色器，以及位于所述黑矩阵和所述滤色器上的平坦化层; 每组彩色滤光片包括红色滤光片，绿色滤光片，蓝色滤色片和由黑色矩阵定义的空白区域; 填充在空白区域中的平坦化层用作白色过滤器; 其中所述彩色胶片基板还包括：位于所述空白区域中的至少一个线性高度补偿部件; 高度补偿分量和黑矩阵排列在相同的层中。以这种方式，白色滤光片的布置不需要再添加一个组合工艺; 此外，添加位于空白区域中的至少一个线性高度补偿分量，而高度补偿分量和黑矩阵被布置在相同的层中，因此不需要额外的组合过程; 此外，高度补偿部件可以用作转向堤，以增强用于平坦化层的坯料区域内的水平方向上的流动能量，从而简化了具有红色过滤器，绿色过滤器，蓝色滤光片和白色滤光片，同时提高平坦化层的平坦度。

10. 发明申请

US20170221924A1 Method for Manufacturing TFT, Array Substrate and Display Device 有权
公开(公告)号：US20170221924A1
公开(公告)日：2017-08-03
申请号：US15221222
申请日：2016-07-27
申请人： BOE Technology Group Co., Ltd.
发明人： Tongshang Su , Shengping Du , Ning Liu , Dongfang Wang , Guangcai Yuan
IPC分类号： H01L27/12 , H01L29/66
CPC分类号： H01L27/127 , H01L27/1225 , H01L27/1288 , H01L29/66969
摘要： A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.

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