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1. 发明申请

US20110194991A1 Tubular Reactor With Jet Impingement Heat Transfer 有权
标题翻译：管式反应堆与喷射冲击传热
公开(公告)号：US20110194991A1
公开(公告)日：2011-08-11
申请号：US13092378
申请日：2011-04-22
申请人： Bo Jin , Robert Roger Broekhuis , Xiaoyi He , Shankar Nataraj , William Robert Licht , Diwakar Garg
发明人： Bo Jin , Robert Roger Broekhuis , Xiaoyi He , Shankar Nataraj , William Robert Licht , Diwakar Garg
IPC分类号： B01J8/02
CPC分类号： C01B3/38 , B01J8/048 , B01J8/06 , B01J19/305 , B01J2208/00814 , B01J2219/30475 , B01J2219/32408 , C01B2203/0233 , C01B2203/0261 , C01B2203/0283 , Y02P20/52
摘要： A tubular reactor for producing a product mixture in a tubular reactor where the tubular reactor comprises an internal catalytic insert with cup-shaped structures having orifices for forming fluid jets for impinging the fluid on the tube wall. Jet impingement is used to improve heat transfer between the fluid in the tube and the tube wall in a non-adiabatic reactor. The tubular reactor and method may be used for endothermic reactions such as steam methane reforming and for exothermic reactions such as methanation.
摘要翻译：一种用于在管状反应器中生产产物混合物的管状反应器，其中管式反应器包括具有杯状结构的内部催化剂插入物，其具有用于形成用于将流体冲击在管壁上的流体射流的孔口。喷射冲击用于改善管道中的流体与非绝热反应器中的管壁之间的热传递。管式反应器和方法可用于吸热反应，例如蒸汽甲烷重整和放热反应如甲烷化。

2. 发明授权

US08409521B2 Tubular reactor with jet impingement heat transfer 有权
标题翻译：管式反应器与喷射冲击传热
公开(公告)号：US08409521B2
公开(公告)日：2013-04-02
申请号：US13092378
申请日：2011-04-22
申请人： Bo Jin , Robert Roger Broekhuis , Xiaoyi He , Shankar Nataraj , William Robert Licht , Diwakar Garg
发明人： Bo Jin , Robert Roger Broekhuis , Xiaoyi He , Shankar Nataraj , William Robert Licht , Diwakar Garg
IPC分类号： B01J8/02 , B01J35/02 , B01J19/00 , B01J8/00 , B01J8/04 , B01J8/06 , B01J8/08 , B01J19/30 , B01J19/32
CPC分类号： C01B3/38 , B01J8/048 , B01J8/06 , B01J19/305 , B01J2208/00814 , B01J2219/30475 , B01J2219/32408 , C01B2203/0233 , C01B2203/0261 , C01B2203/0283 , Y02P20/52
摘要： A tubular reactor for producing a product mixture in a tubular reactor where the tubular reactor comprises an internal catalytic insert with cup-shaped structures having orifices for forming fluid jets for impinging the fluid on the tube wall. Jet impingement is used to improve heat transfer between the fluid in the tube and the tube wall in a non-adiabatic reactor. The tubular reactor and method may be used for endothermic reactions such as steam methane reforming and for exothermic reactions such as methanation.
摘要翻译：一种用于在管状反应器中生产产物混合物的管状反应器，其中管式反应器包括具有杯状结构的内部催化剂插入物，其具有用于形成用于将流体冲击在管壁上的流体射流的孔口。喷射冲击用于改善管道中的流体与非绝热反应器中的管壁之间的热传递。管式反应器和方法可用于吸热反应，例如蒸汽甲烷重整和放热反应如甲烷化。

3. 发明授权

US08178075B2 Tubular reactor with jet impingement heat transfer 有权
标题翻译：管式反应器与喷射冲击传热
公开(公告)号：US08178075B2
公开(公告)日：2012-05-15
申请号：US12190806
申请日：2008-08-13
申请人： Xiaoyi He , Robert Roger Broekhuis , Diwakar Garg , Bo Jin , William Robert Licht , Stephen Clyde Tentarelli
发明人： Xiaoyi He , Robert Roger Broekhuis , Diwakar Garg , Bo Jin , William Robert Licht , Stephen Clyde Tentarelli
IPC分类号： B01J8/02
CPC分类号： B01J8/0426 , B01J8/0496 , B01J10/007 , B01J19/32 , B01J2219/30475 , B01J2219/32206 , B01J2219/3221 , B01J2219/32227 , B01J2219/32237 , B01J2219/32408 , B01J2219/32466 , C01B3/382 , C01B3/384 , C01B2203/0233 , C01B2203/0811 , C01B2203/1011 , C01B2203/1035 , C01B2203/1241 , C01B2203/1247 , C01B2203/142 , C01B2203/143
摘要： A tubular reactor and method for producing a product mixture in a tubular reactor where the tubular reactor comprises an internal catalytic insert having orifices for forming fluid jets for impinging the fluid on the tube wall. Jet impingement is used to improve heat transfer between the fluid in the tube and the tube wall in a non-adiabatic reactor. The tubular reactor and method may be used for endothermic reactions such as steam methane reforming and for exothermic reactions such as methanation.
摘要翻译：一种管状反应器和在管状反应器中产生产物混合物的方法，其中管式反应器包括内部催化剂插入物，其具有用于形成用于将流体冲击在管壁上的流体射流的孔口。喷射冲击用于改善管道中的流体与非绝热反应器中的管壁之间的热传递。管式反应器和方法可用于吸热反应，例如蒸汽甲烷重整和放热反应如甲烷化。

4. 发明申请

US20100038593A1 Tubular Reactor With Jet Impingement Heat Transfer 有权
标题翻译：管式反应堆与喷射冲击传热
公开(公告)号：US20100038593A1
公开(公告)日：2010-02-18
申请号：US12190806
申请日：2008-08-13
申请人： Xiaoyi He , Robert Roger Broekhuis , Diwakar Garg , Bo Jin , William Robert Licht , Stephen Clyde Tentarelli
发明人： Xiaoyi He , Robert Roger Broekhuis , Diwakar Garg , Bo Jin , William Robert Licht , Stephen Clyde Tentarelli
IPC分类号： C01B3/38 , B01J8/00
CPC分类号： B01J8/0426 , B01J8/0496 , B01J10/007 , B01J19/32 , B01J2219/30475 , B01J2219/32206 , B01J2219/3221 , B01J2219/32227 , B01J2219/32237 , B01J2219/32408 , B01J2219/32466 , C01B3/382 , C01B3/384 , C01B2203/0233 , C01B2203/0811 , C01B2203/1011 , C01B2203/1035 , C01B2203/1241 , C01B2203/1247 , C01B2203/142 , C01B2203/143
摘要： A tubular reactor and method for producing a product mixture in a tubular reactor where the tubular reactor comprises an internal catalytic insert having orifices for forming fluid jets for impinging the fluid on the tube wall. Jet impingement is used to improve heat transfer between the fluid in the tube and the tube wall in a non-adiabatic reactor. The tubular reactor and method may be used for endothermic reactions such as steam methane reforming and for exothermic reactions such as methanation.
摘要翻译：一种管状反应器和在管状反应器中产生产物混合物的方法，其中管式反应器包括内部催化剂插入物，其具有用于形成用于将流体冲击在管壁上的流体射流的孔口。喷射冲击用于改善管道中的流体与非绝热反应器中的管壁之间的热传递。管式反应器和方法可用于吸热反应，例如蒸汽甲烷重整和放热反应如甲烷化。

5. 发明授权

US11110424B2 Reformer box with reformer tunnel including tunnel port 有权
公开(公告)号：US11110424B2
公开(公告)日：2021-09-07
申请号：US16686325
申请日：2019-11-18
申请人： Monica Zanfir , Bo Jin , Minish Mahendra Shah
发明人： Monica Zanfir , Bo Jin , Minish Mahendra Shah
IPC分类号： B01J8/06 , F28F9/013 , F28F9/02
摘要： A top-fired reformer box is provided. The top-fired reformer box includes a burner row, a tube row, a reformer tunnel including a closed end, an open end, and a plurality of tunnel ports formed along a side wall of the reformer tunnel, the plurality of tunnel ports including a one or more tunnel port located along the side of the tunnel, and a flow resistor positioned at least one tunnel port applying a flow resistance for flue gas entering the reformer tunnel via the at least one tunnel port such that uniform flow is achieved within the reformer tunnel.

6. 发明授权

US07355880B1 Soft error resistant memory cell and method of manufacture 有权
标题翻译：耐软存储单元及其制造方法
公开(公告)号：US07355880B1
公开(公告)日：2008-04-08
申请号：US10823529
申请日：2004-04-13
申请人： Bo Jin , Ahmad Chatila , Kaichiu Wong
发明人： Bo Jin , Ahmad Chatila , Kaichiu Wong
IPC分类号： G11C11/24
CPC分类号： G11C11/4125 , H01L27/11 , H01L27/1104 , Y10S257/903
摘要： A semiconductor device memory cell (100) can include a built-in capacitor for reducing a soft-error rate (SER). A memory cell (100) can include a first inverter (102) and second inverter (104) arranged in a cross-coupled configuration. A capacitor (110) can be coupled between a first storage node (106) and second storage node (108). A capacitor (110) can be a “built-in” capacitor formed with interconnect wirings utilized to connect memory cell circuit components.
摘要翻译：半导体器件存储单元（100）可以包括用于降低软错误率（SER）的内置电容器。存储单元（100）可以包括以交叉耦合配置布置的第一反相器（102）和第二反相器（104）。电容器（110）可以耦合在第一存储节点（106）和第二存储节点（108）之间。电容器（110）可以是形成有用于连接存储器单元电路部件的互连布线的“内置”电容器。

7. 发明授权

US07112974B1 Proble for testing integrated circuits 有权
标题翻译：测试集成电路的问题
公开(公告)号：US07112974B1
公开(公告)日：2006-09-26
申请号：US10154089
申请日：2002-05-23
申请人： Bo Jin , Qi Gu
发明人： Bo Jin , Qi Gu
IPC分类号： G01R31/02
CPC分类号： G01R1/06711 , G01R1/06716 , G01R1/06738
摘要： In one embodiment, a probe for testing integrated circuits includes a body having a tip and a hardening material on the tip. The hardening material helps improve the hardness of the tip. The hardening material thus allows the probe to reliably penetrate a layer to make a good electrical connection with a contact point under the layer, for example. In one embodiment, an electrically conductive coating is deposited over the hardening material.
摘要翻译：在一个实施例中，用于测试集成电路的探针包括具有尖端的主体和尖端上的硬化材料。硬化材料有助于提高尖端的硬度。因此，硬化材料允许探针可靠地穿透层，以与例如层之下的接触点形成良好的电连接。在一个实施例中，导电涂层沉积在硬化材料上。

8. 发明授权

US06844237B1 Method for improving dielectric polishing 有权
标题翻译：改善电介质抛光的方法
公开(公告)号：US06844237B1
公开(公告)日：2005-01-18
申请号：US09774323
申请日：2001-01-31
申请人： Bo Jin , Andrey Zagrebelny , Matthew Buchanan
发明人： Bo Jin , Andrey Zagrebelny , Matthew Buchanan
IPC分类号： H01L21/302 , H01L21/308
CPC分类号： H01L21/3083
摘要： According to one embodiment, a shallow trench isolation (STI) method (500) may include forming an etch mask layer over both a first and second substrate side (504). An etch mask layer over a first substrate side (506) may be patterned to form a STI etch mask, and trenches may be etched into a substrate (508). A trench dielectric layer can be formed over a first substrate side (510). An etch mask layer formed over a second substrate side can be etched (512), reducing and/or eliminating stress that may deform a substrate or otherwise adversely affect STI features. A trench dielectric may then be chemically-mechanically polished (step 514).
摘要翻译：根据一个实施例，浅沟槽隔离（STI）方法（500）可以包括在第一和第二衬底侧（504）上形成蚀刻掩模层。第一衬底侧（506）上的蚀刻掩模层可以被图案化以形成STI蚀刻掩模，并且可以将沟槽蚀刻到衬底（508）中。沟槽电介质层可以在第一衬底侧（510）上形成。可以蚀刻形成在第二衬底侧上的蚀刻掩模层（512），减少和/或消除可能使衬底变形或以其它方式不利地影响STI特征的应力。然后可以对沟槽电介质进行化学机械抛光（步骤514）。

9. 发明授权

US06734108B1 Semiconductor structure and method of making contacts in a semiconductor structure 有权
标题翻译：在半导体结构中制造接触的半导体结构和方法
公开(公告)号：US06734108B1
公开(公告)日：2004-05-11
申请号：US09405945
申请日：1999-09-27
申请人： Bo Jin , Jianmin Qiao , Shahin Sharifzadeh
发明人： Bo Jin , Jianmin Qiao , Shahin Sharifzadeh
IPC分类号： H01L21302
CPC分类号： H01L21/76897 , H01L21/02129 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02362 , H01L21/31116 , H01L21/31625
摘要： According to one embodiment (300), a method of forming a self-aligned contact can include forming adjacent conducting structures with sidewalls (302). A first insulating layer may then be formed without first forming a liner (304), such as a liner that is conventionally formed to protect underlying conducting structures and/or a substrate. A contact hole may then be etched between adjacent conducting structures (306). Contact structures may then be formed (308).
摘要翻译：根据一个实施例（300），形成自对准接触的方法可以包括用侧壁（302）形成相邻的导电结构。然后可以形成第一绝缘层，而不首先形成衬垫（304），例如通常形成以保护下面的导电结构和/或衬底的衬垫。然后可以在相邻的导电结构（306）之间蚀刻接触孔。然后可以形成接触结构（308）。

10. 发明授权

US06350665B1 Semiconductor structure and method of making contacts and source and/or drain junctions in a semiconductor device 有权
标题翻译：在半导体器件中制造接触和源极和/或漏极结的半导体结构和方法
公开(公告)号：US06350665B1
公开(公告)日：2002-02-26
申请号：US09561292
申请日：2000-04-28
申请人： Bo Jin , Jianmin Qiao
发明人： Bo Jin , Jianmin Qiao
IPC分类号： H01L213205
CPC分类号： H01L21/76897 , H01L21/31116 , H01L21/31612 , H01L21/31625 , H01L21/3185 , H01L21/76802 , H01L21/76877 , H01L21/76895 , H01L29/6653
摘要： According to one embodiment (100), a method of manufacturing a semiconductor device may include forming diffusion regions in a substrate with a gate, first spacer, and second spacer as a diffusion mask (102). A second spacer may then be removed (104) prior to the formation of an interlayer dielectric. An interlayer dielectric may then be formed (106) over a gate structure and first spacer. A contact hole may then be etched through the interlayer dielectric that is self-aligned with the gate (108).
摘要翻译：根据一个实施例（100），制造半导体器件的方法可以包括在具有栅极，第一间隔物和第二间隔物的衬底中形成扩散区域作为扩散掩模（102）。然后可以在形成层间电介质之前去除第二间隔物（104）。然后可以在栅极结构和第一间隔物上形成（106）层间电介质。然后可以通过与栅极（108）自对准的层间电介质蚀刻接触孔。

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