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1. 发明授权

US5811841A Photoconductive switching with thin layer enhanced breakdown charateristics 失效
标题翻译：具有薄层的光导开关增强了击穿特性
公开(公告)号：US5811841A
公开(公告)日：1998-09-22
申请号：US832250
申请日：1997-04-03
申请人： Biswa N. Ganguly , Brian A. Hibbeln
发明人： Biswa N. Ganguly , Brian A. Hibbeln
IPC分类号： H01L31/08 , H01L29/74
CPC分类号： H01L31/08
摘要： A high voltage high current semiconductor switching device in which the tendency to incur premature electrical breakdown through carrier channels formed slightly below the surface of the semiconductor material is avoided. This avoidance occurs through use of a current dispersing electrically insulating element added at one extremity of the switching device structure. The added current dispersing element may be in the form of a thin oxide layer added at the anode end of the device in the case of a silicon embodiment of the invention. Tunneling conduction is believed to occur in this silicon dioxide layer and such conduction has the effect of dispersing the current through the silicon over a cross-sectional area sufficiently large to prevent the current filamentation, localized heating, thermal runaway and self destruction sequence often encountered in previous arrangements of higher energy semiconductor switches. Although several semiconductor materials are believed feasible for fabricating the device, a silicon material embodiment is primarily disclosed.
摘要翻译：避免了高压大电流半导体开关器件，其中避免了通过形成在半导体材料的表面下方形成的载流子通道的过早电击穿的趋势。通过使用在开关器件结构的一个末端处添加的电流分散电绝缘元件来实现该避免。在本发明的硅的情况下，添加的电流分散元件可以是在器件的阳极端处添加的薄氧化物层的形式。据信隧道导电发生在该二氧化硅层中，并且这种传导具有将电流分散在超过在足够大的横截面积上的电流的作用，以防止当前的丝状化，局部加热，热失控和自毁破坏序列经常遇到先前安排的高能半导体开关。虽然认为几种半导体材料可用于制造器件，但是主要公开了硅材料的实施例。

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