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1. 发明申请

US20140035114A1 SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD 有权
标题翻译：半导体封装结构与方法
公开(公告)号：US20140035114A1
公开(公告)日：2014-02-06
申请号：US13745072
申请日：2013-01-18
申请人： Bishnu Prasanna Gogoi , Phuong Le , Alexander J. Elliott
发明人： Bishnu Prasanna Gogoi , Robert Bruce Davies , Phuong Le , Alexander J. Elliott
IPC分类号： H01L25/065
CPC分类号： H01L25/0652 , H01L23/13 , H01L23/142 , H01L23/3121 , H01L23/60 , H01L23/64 , H01L25/072 , H01L2224/48091 , H01L2224/73257 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In one embodiment, a semiconductor package structure includes a substrate having a well region extending from a major surface. An interposer structure is attached to the substrate within the well region. The interposer structure has a major surface that is substantially co-planar with the major surface of the substrate. An electrical device is directly attached to the substrate and the interposer structure. The interposer structure can be an active device, such as a gate driver integrated circuit, or passive device structure, such as an impedance matching network.
摘要翻译：在一个实施例中，半导体封装结构包括具有从主表面延伸的阱区的衬底。插入器结构附着在阱区内的衬底上。插入器结构具有与基板的主表面基本共面的主表面。电气设备直接连接到基板和插入器结构。插入器结构可以是有源器件，例如栅极驱动器集成电路或无源器件结构，例如阻抗匹配网络。

2. 发明授权

US07827660B2 Bimorphic structures, sensor structures formed therewith, and methods therefor 有权
标题翻译：双相结构，形成的传感器结构及其方法
公开(公告)号：US07827660B2
公开(公告)日：2010-11-09
申请号：US12182713
申请日：2008-07-30
申请人： Bishnu Prasanna Gogoi , Navid Yazdi
发明人： Bishnu Prasanna Gogoi , Navid Yazdi
IPC分类号： H01L41/22 , H04R17/00
CPC分类号： H01H1/0036 , H01H37/52 , H02N11/002 , Y10T29/42 , Y10T29/49002 , Y10T29/49004 , Y10T29/49005 , Y10T29/49007 , Y10T29/49105
摘要： A bimorphic structure responsive to changes in an environmental condition, sensor structures incorporating one or more of such bimorphic structures, and a method of forming such bimorphic structures. The sensor structure has an electrically-conductive first contact on a substrate, and a bimorph beam anchored to the substrate so that a portion thereof is suspended above the first contact. The bimorph beam has a multilayer structure that includes first and second layers, with the second layer between the first layer and the substrate. A portion of the first layer projects through an opening in the second layer toward the first contact so as to define an electrically-conductive second contact located on the beam so as to be spaced apart and aligned with the first contact for contact with the first contact when the beam sufficiently deflects toward the substrate.
摘要翻译：响应于环境条件变化的双相结构，包含一种或多种这样的双相结构的传感器结构，以及形成这种双相结构的方法。传感器结构在基板上具有导电的第一接触，并且将锚定在基板上的双压电晶片梁，使得其一部分悬挂在第一接触件的上方。双晶片束具有包括第一和第二层的多层结构，第二层在第一层和衬底之间。第一层的一部分朝向第一接触突出穿过第二层中的开口，以便限定位于梁上的导电的第二接触件，以便与第一接触件间隔开并对齐，以与第一接触件接触当束足够偏向衬底时。

3. 发明授权

US07812454B2 Semiconductor structure and method of manufacture 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US07812454B2
公开(公告)日：2010-10-12
申请号：US12208630
申请日：2008-09-11
申请人： Bishnu Prasanna Gogoi
发明人： Bishnu Prasanna Gogoi
IPC分类号： H01L23/48
CPC分类号： H01L27/1203 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, an electrical bus embedded in a dielectric material below a surface of a semiconductor substrate is disclosed. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，公开了埋在半导体衬底的表面下方的电介质材料中的电母线。描述和要求保护其他实施例。

4. 发明授权

US07777295B2 Semiconductor structure and method of manufacture 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US07777295B2
公开(公告)日：2010-08-17
申请号：US12329914
申请日：2008-12-08
申请人： Bishnu Prasanna Gogoi , Michael Albert Tischler
发明人： Bishnu Prasanna Gogoi , Michael Albert Tischler
IPC分类号： H01L29/06 , H01L21/764 , H01L21/768
CPC分类号： H01L21/76237 , H01L21/76232
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，结构包括电介质材料和衬底表面下的空隙。所述结构还包括在所述电介质材料上方的所述第一空隙上的掺杂电介质材料，其中所述电介质材料的至少一部分在所述衬底的至少一部分和所述掺杂电介质材料的至少一部分之间。描述和要求保护其他实施例。

5. 发明申请

US20090261421A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE 有权
公开(公告)号：US20090261421A1
公开(公告)日：2009-10-22
申请号：US12255421
申请日：2008-10-21
申请人： Bishnu Prasanna Gogoi
发明人： Bishnu Prasanna Gogoi
IPC分类号： H01L27/06 , H01L21/8249
CPC分类号： H01L29/7803 , H01L21/2815 , H01L21/823412 , H01L21/823456 , H01L21/823807 , H01L21/82385 , H01L27/0922 , H01L29/0638 , H01L29/0657 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/402 , H01L29/42376 , H01L29/456 , H01L29/4941 , H01L29/66689 , H01L29/66719 , H01L29/7802 , H01L29/7816
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

6. 发明申请

US20090224339A1 Silicon-Germanium-Carbon Semiconductor Structure 有权
标题翻译：硅 - 锗 - 半导体结构
公开(公告)号：US20090224339A1
公开(公告)日：2009-09-10
申请号：US12394285
申请日：2009-02-27
申请人： Bishnu Prasanna Gogoi , Robert Bruce Davies
发明人： Bishnu Prasanna Gogoi , Robert Bruce Davies
IPC分类号： H01L29/772
CPC分类号： H01L29/7811 , H01L21/2815 , H01L29/0653 , H01L29/0661 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/7802
摘要： In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second semiconductor material over a portion the first semiconductor material, wherein the second semiconductor material comprises silicon-germanium-carbon (SiGeC) and wherein the first semiconductor material is a silicon epitaxial layer. The semiconductor structure further includes an active device, wherein a portion of the active device is formed in the second semiconductor material and a dielectric structure extending from the first surface of the first semiconductor material into the semiconductor substrate through the first semiconductor material.
摘要翻译：根据一个或多个实施例，半导体结构包括半导体衬底，半导体衬底上的第一半导体材料和第一半导体材料部分上的第二半导体材料，其中第二半导体材料包括硅 - 锗 - 碳（ SiGeC），并且其中所述第一半导体材料是硅外延层。半导体结构还包括有源器件，其中有源器件的一部分形成在第二半导体材料中，以及电介质结构，通过第一半导体材料从第一半导体材料的第一表面延伸到半导体衬底中。

7. 发明申请

US20090056108A1 BIMORPHIC STRUCTURES, SENSOR STRUCTURES FORMED THEREWITH, AND METHODS THEREFOR 有权
标题翻译：二元结构，形成的传感器结构及其方法
公开(公告)号：US20090056108A1
公开(公告)日：2009-03-05
申请号：US12182713
申请日：2008-07-30
申请人： Bishnu Prasanna Gogoi , Navid Yazdi
发明人： Bishnu Prasanna Gogoi , Navid Yazdi
IPC分类号： H01H11/00
CPC分类号： H01H1/0036 , H01H37/52 , H02N11/002 , Y10T29/42 , Y10T29/49002 , Y10T29/49004 , Y10T29/49005 , Y10T29/49007 , Y10T29/49105
摘要： A bimorphic structure responsive to changes in an environmental condition, sensor structures incorporating one or more of such bimorphic structures, and a method of forming such bimorphic structures. The sensor structure has an electrically-conductive first contact on a substrate, and a bimorph beam anchored to the substrate so that a portion thereof is suspended above the first contact. The bimorph beam has a multilayer structure that includes first and second layers, with the second layer between the first layer and the substrate. A portion of the first layer projects through an opening in the second layer toward the first contact so as to define an electrically-conductive second contact located on the beam so as to be spaced apart and aligned with the first contact for contact with the first contact when the beam sufficiently deflects toward the substrate.
摘要翻译：响应于环境条件变化的双相结构，包含一种或多种这样的双相结构的传感器结构，以及形成这种双相结构的方法。传感器结构在基板上具有导电的第一接触，并且将锚定在基板上的双压电晶片梁，使得其一部分悬挂在第一接触件的上方。双晶片束具有包括第一和第二层的多层结构，第二层在第一层和衬底之间。第一层的一部分朝向第一接触突出穿过第二层中的开口，以便限定位于梁上的导电的第二接触件，以便与第一接触件间隔开并对齐，以与第一接触件接触当束足够偏向衬底时。

8. 发明授权

US08501578B2 Semiconductor structure formed without requiring thermal oxidation 有权
标题翻译：半导体结构形成而不需要热氧化
公开(公告)号：US08501578B2
公开(公告)日：2013-08-06
申请号：US12691917
申请日：2010-01-22
申请人： Bishnu Prasanna Gogoi
发明人： Bishnu Prasanna Gogoi
IPC分类号： H01L21/762
CPC分类号： H01L21/764 , H01L21/7682 , H01L23/5223 , H01L23/5227 , H01L23/5228 , H01L27/0617 , H01L27/0629 , H01L27/08 , H01L2924/0002 , H01L2924/00
摘要： Briefly, in accordance with one or more embodiments, a semiconductor device is manufactured by forming at least two or more cavities below a surface of a semiconductor substrate wherein the at least two or more cavities are spaced apart from each other by a selected distance, filling at least a portion of the at least two or more cavities with a dielectric material to form at least two or more dielectric structures, removing a portion of the substrate between the at least two or more dielectric structures to form at least one additional cavity, and covering the at least one additional cavity.
摘要翻译：简而言之，根据一个或多个实施例，通过在半导体衬底的表面下方形成至少两个或更多个空腔来制造半导体器件，其中至少两个或更多个空腔彼此间隔一定距离，填充所述至少两个或更多个空腔的至少一部分具有介电材料以形成至少两个或更多个电介质结构，在所述至少两个或更多个电介质结构之间移除所述衬底的一部分以形成至少一个附加腔，以及覆盖至少一个附加空腔。

9. 发明授权

US08049261B2 Semiconductor structure and method of manufacture 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US08049261B2
公开(公告)日：2011-11-01
申请号：US12244485
申请日：2008-10-02
申请人： Bishnu Prasanna Gogoi
发明人： Bishnu Prasanna Gogoi
IPC分类号： H01L27/108
CPC分类号： H01L28/91 , H01L27/0629
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a capacitor embedded in a dielectric material below the surface of a semiconductor substrate is disclosed. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，公开了嵌入在半导体衬底的表面下方的电介质材料中的电容器。描述和要求保护其他实施例。

10. 发明授权

US07999250B2 Silicon-germanium-carbon semiconductor structure 有权
标题翻译：硅 - 锗 - 碳半导体结构
公开(公告)号：US07999250B2
公开(公告)日：2011-08-16
申请号：US12394285
申请日：2009-02-27
申请人： Bishnu Prasanna Gogoi , Robert Bruce Davies
发明人： Bishnu Prasanna Gogoi , Robert Bruce Davies
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/10 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/12
CPC分类号： H01L29/7811 , H01L21/2815 , H01L29/0653 , H01L29/0661 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/7802
摘要： In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second semiconductor material over a portion the first semiconductor material, wherein the second semiconductor material comprises silicon-germanium-carbon (SiGeC) and wherein the first semiconductor material is a silicon epitaxial layer. The semiconductor structure further includes an active device, wherein a portion of the active device is formed in the second semiconductor material and a dielectric structure extending from the first surface of the first semiconductor material into the semiconductor substrate through the first semiconductor material.
摘要翻译：根据一个或多个实施例，半导体结构包括半导体衬底，半导体衬底上的第一半导体材料和第一半导体材料部分上的第二半导体材料，其中第二半导体材料包括硅 - 锗 - 碳（ SiGeC），并且其中所述第一半导体材料是硅外延层。半导体结构还包括有源器件，其中有源器件的一部分形成在第二半导体材料中，以及电介质结构，通过第一半导体材料从第一半导体材料的第一表面延伸到半导体衬底中。

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