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    • 10. 发明申请
    • System and method for I/O ESD protection with floating and/or biased polysilicon regions
    • 具有浮置和/或偏置多晶硅区域的I / O ESD保护的系统和方法
    • US20070164362A1
    • 2007-07-19
    • US11517546
    • 2006-09-06
    • Ting SuMin JengChin LiaoJun Huang
    • Ting SuMin JengChin LiaoJun Huang
    • H01L23/62
    • H01L27/0266
    • A system and method for electrostatic discharge protection. The system includes a plurality of transistors. The plurality of transistors includes a plurality of gate regions, a plurality of source regions, and a plurality of drain regions. The plurality of source regions and the plurality of drain regions are located within an active area in a substrate, and the active area is adjacent to at least an isolation region in the substrate. Additionally, the system includes a polysilicon region. The polysilicon region is separated from the substrate by a dielectric layer, and the polysilicon region intersects each of the plurality of gate regions. At least a part of the polysilicon region is on the active area.
    • 一种用于静电放电保护的系统和方法。 该系统包括多个晶体管。 多个晶体管包括多个栅极区域,多个源极区域和多个漏极区域。 多个源极区域和多个漏极区域位于衬底中的有源区域内,并且有源区域与衬底中的至少一个隔离区域相邻。 另外,该系统包括多晶硅区域。 多晶硅区域通过电介质层与衬底分离,并且多晶硅区域与多个栅极区域中的每一个相交。 多晶硅区域的至少一部分在有源区域上。