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    • 5. 发明授权
    • Dynamic data center network with optical circuit switch
    • 动态数据中心网络采用光电开关
    • US08867915B1
    • 2014-10-21
    • US13342784
    • 2012-01-03
    • Amin VahdatXiaoxue ZhaoPaul GermanoBikash KoleyHong Liu
    • Amin VahdatXiaoxue ZhaoPaul GermanoBikash KoleyHong Liu
    • H04J14/00
    • H04B10/27H04Q11/0005H04Q11/0071H04Q2011/0052H04Q2011/0083H04Q2213/1301
    • A system and method of providing a dynamic optical network topology according to topology determinations made by a network control is disclosed. The system and method includes optical ports on an optical circuit switch system operably connected to a plurality of server groups, and optical ports on the optical circuit switch system operably connected to a plurality of packet processing nodes. The system and method also includes at least one memory and at least one processor to execute network control software to receive input comprising a bandwidth request, determine an output comprising a preferred optical link topology for the optical circuit switch system based on the received input, convert the optical link topology for the optical circuit switch system into optical circuit switch port mapping, and send the optical circuit switch port mapping to the optical circuit switch system and to the packet processing nodes.
    • 公开了根据由网络控制进行的拓扑确定提供动态光网络拓扑的系统和方法。 该系统和方法包括可操作地连接到多个服务器组的光学电路交换系统上的光学端口和可操作地连接到多个分组处理节点的光学电路交换系统上的光学端口。 该系统和方法还包括至少一个存储器和至少一个处理器,用于执行网络控制软件以接收包括带宽请求的输入,基于所接收的输入确定包括用于光电路交换系统的优选光链路拓扑的输出,转换 将光电开关系统的光链路拓扑转换成光电路交换机端口映射,并将光电路交换机端口映射发送给光电路交换系统和分组处理节点。
    • 6. 发明授权
    • Dynamic data center network with optical circuit switch
    • 动态数据中心网络采用光电开关
    • US09184845B1
    • 2015-11-10
    • US13846749
    • 2013-03-18
    • Amin VahdatXiaoxue ZhaoPaul GermanoBikash KoleyHong Liu
    • Amin VahdatXiaoxue ZhaoPaul GermanoBikash KoleyHong Liu
    • H04B10/27
    • H04B10/27H04Q11/0005H04Q11/0071H04Q2011/0052H04Q2011/0083H04Q2213/1301
    • A system and method of providing a dynamic optical network topology according to topology determinations made by a network control is disclosed. The system and method includes optical ports on an optical circuit switch system operably connected to a plurality of server groups, and optical ports on the optical circuit switch system operably connected to a plurality of packet processing nodes. The system and method also includes at least one memory and at least one processor to execute network control software to receive input comprising a bandwidth request, determine an output comprising a preferred optical link topology for the optical circuit switch system based on the received input, convert the optical link topology for the optical circuit switch system into optical circuit switch port mapping, and send the optical circuit switch port mapping to the optical circuit switch system and to the packet processing nodes.
    • 公开了根据由网络控制进行的拓扑确定提供动态光网络拓扑的系统和方法。 该系统和方法包括可操作地连接到多个服务器组的光学电路交换系统上的光学端口和可操作地连接到多个分组处理节点的光学电路交换系统上的光学端口。 该系统和方法还包括至少一个存储器和至少一个处理器,用于执行网络控制软件以接收包括带宽请求的输入,基于所接收的输入确定包括用于光电路交换系统的优选光链路拓扑的输出,转换 将光电开关系统的光链路拓扑转换成光电路交换机端口映射,并将光电路交换机端口映射发送给光电路交换系统和分组处理节点。
    • 9. 发明授权
    • Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor
    • 具有III-V族半导体的氧化应变补偿超晶格的垂直腔表面发射激光器
    • US06493366B1
    • 2002-12-10
    • US09564371
    • 2000-05-02
    • Frederick G. JohnsonBikash KoleyLinda M. Wasiczko
    • Frederick G. JohnsonBikash KoleyLinda M. Wasiczko
    • H01S500
    • B82Y20/00H01S5/18311H01S5/18341H01S5/18372H01S5/3406H01S5/3425
    • A vertical cavity surface emitting laser that includes a Group III-V semiconductor material substrate; a first Distributed Bragg Reflector mirror, where the first Distributed Bragg Reflector mirror includes at least seven pairs of layers, where each layer has a different index of refraction, where one of the layers is a Group III-V semiconductor material, and where the other layer is a completely oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a first Group III-V semiconductor material layer; a first contact; a selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice of Group III-V semiconductor material includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a second Group III-V semiconductor material layer; a second contact; and a second Distributed Bragg Reflector mirror that is identical to the first Distributed Bragg Reflector mirror.
    • 一种垂直腔表面发射激光器,包括III-V族半导体材料衬底; 第一分布布拉格反射镜,其中第一分布布拉格反射镜包括至少七对层,其中每层具有不同的折射率,其中一层是III-V族半导体材料,其中另一层 层是III-V族半导体材料的完全氧化的至少一个应变补偿超晶格,其中每个至少一个应变补偿超晶格包括至少两个III-V族半导体材料的单层和至少两个铝单层 - Ⅲ-Ⅴ族半导体材料; 第一III-V族半导体材料层; 第一次接触 选择性氧化的至少一种III-V族半导体材料的应变补偿超晶格,其中每个至少一个III-V族半导体材料的应变补偿超晶格包括至少两个III-V族半导体材料的单层,并且至少 两个含铝的III-V族半导体材料的单层; 第二组III-V族半导体材料层; 第二次接触 和与第一个分布式布拉格反射镜相同的第二个分布式布拉格反射镜。
    • 10. 发明授权
    • Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor
    • 具有III-V族半导体氧化应变补偿超晶格的脊激光器
    • US06407407B1
    • 2002-06-18
    • US09563314
    • 2000-05-02
    • Frederick G. JohnsonBikash KoleyLinda M. Wasiczko
    • Frederick G. JohnsonBikash KoleyLinda M. Wasiczko
    • H01L2906
    • B82Y20/00H01S5/22H01S5/2215H01S5/3216H01S5/3406H01S5/3425
    • A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a Group III-V semiconductor material cap layer; and a contact material. Each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. In the preferred embodiment, the substrate is InP of any type; each selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material is InAs/AlAs, where each at least one superlattice of InAs/AlAs includes at least two monolayers of InAs and at least two monolayers of AlAs; the multiple quantum well active region is InGaAsP lattice matched to the InP substrate, the Group III-V semiconductor material cap layer is InP, and the contact material is gold.
    • 包括III-V族半导体材料基板的脊状激光器; 第III-V族半导体材料的第一选择性氧化的至少一个应变补偿超晶格; 多量子阱活性区; 第二种选择性氧化至少一种III-V族半导体材料的应变补偿超晶格; III-V族半导体材料盖层; 和接触材料。 每个至少一个应变补偿超晶格包括至少两个III-V族半导体材料的单层和含铝III-V族半导体材料的至少两个单层。 在优选实施例中,衬底是任何类型的InP; 每个选择性氧化的III-V族半导体材料的至少一个应变补偿超晶格是InAs / AlAs,其中每个至少一个InAs / AlAs的超晶格包括至少两个InAs的单层和至少两个AlAs的单层; 多量子阱有源区是与InP衬底匹配的InGaAsP晶格,III-V族半导体材料盖层是InP,接触材料是金。