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1. 发明申请

US20060054998A1 Bipolar transistor with high dynamic performances 有权
标题翻译：具有高动态性能的双极晶体管
公开(公告)号：US20060054998A1
公开(公告)日：2006-03-16
申请号：US10942165
申请日：2004-09-16
申请人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
发明人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
IPC分类号： H01L27/082
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0817 , H01L29/36 , H01L29/41708 , H01L29/42304 , H01L29/456 , H01L29/7378
摘要： A novel bipolar transistor with very high dynamic performances, usable in an integrated circuit. This bipolar transistor comprises a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
摘要翻译：一种具有非常高动态性能的新型双极晶体管，可用于集成电路。该双极晶体管包括厚度小于50nm的单晶硅发射极区域。双极晶体管的基极由SiGe合金制成。

2. 发明申请

US20070004161A1 Bipolar transistor with high dynamic performances 有权
标题翻译：具有高动态性能的双极晶体管
公开(公告)号：US20070004161A1
公开(公告)日：2007-01-04
申请号：US11516067
申请日：2006-09-06
申请人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
发明人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0817 , H01L29/36 , H01L29/41708 , H01L29/42304 , H01L29/456 , H01L29/7378
摘要： A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
摘要翻译：具有非常高动态性能的双极晶体管，可用于集成电路。双极晶体管具有厚度小于50nm的单晶硅发射极区域。双极晶体管的基极由SiGe合金制成。

3. 发明授权

US07824978B2 Bipolar transistor with high dynamic performances 有权
标题翻译：具有高动态性能的双极晶体管
公开(公告)号：US07824978B2
公开(公告)日：2010-11-02
申请号：US11516067
申请日：2006-09-06
申请人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
发明人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
IPC分类号： H01L29/082
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0817 , H01L29/36 , H01L29/41708 , H01L29/42304 , H01L29/456 , H01L29/7378
摘要： A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
摘要翻译：具有非常高动态性能的双极晶体管，可用于集成电路。双极晶体管具有厚度小于50nm的单晶硅发射极区域。双极晶体管的基极由SiGe合金制成。

4. 发明授权

US07122879B2 Bipolar transistor with high dynamic performances 有权
标题翻译：具有高动态性能的双极晶体管
公开(公告)号：US07122879B2
公开(公告)日：2006-10-17
申请号：US10942165
申请日：2004-09-16
申请人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
发明人： Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
IPC分类号： H01L27/02 , H01L29/70 , H01L31/11
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0817 , H01L29/36 , H01L29/41708 , H01L29/42304 , H01L29/456 , H01L29/7378
摘要： A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
摘要翻译：具有非常高动态性能的双极晶体管，可用于集成电路。双极晶体管具有厚度小于50nm的单晶硅发射极区域。双极晶体管的基极由SiGe合金制成。

5. 发明申请

US20050037587A1 Heterojunction bipolar transistor 审中-公开
标题翻译：异质结双极晶体管
公开(公告)号：US20050037587A1
公开(公告)日：2005-02-17
申请号：US10914482
申请日：2004-08-09
申请人： Bertrand Martinet , Michel Marty , Pascal Chevalier , Alain Chantre
发明人： Bertrand Martinet , Michel Marty , Pascal Chevalier , Alain Chantre
IPC分类号： H01L21/331 , H01L29/08 , H01L21/8222
CPC分类号： H01L29/66287 , H01L29/0817 , H01L29/66242
摘要： A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconductor material of the first doping type.
摘要翻译：一种用于形成异质结双极晶体管的方法，包括以下步骤：在半导体衬底中形成第一掺杂类型的集电极区域; 通过在集电区域的一部分上方的外延生长形成基区的第二掺杂类型的硅/锗层; 在硅/锗层之上形成由相对于硅/锗层可选择性地蚀刻的材料以及相对于层和连续形成的绝缘间隔物形成的牺牲发射体; 在所述牺牲发射体的侧面上形成第一绝缘间隔物; 通过将硅/锗层的暴露部分上的硅层外延生长; 形成与所述第一间隔物相邻的第二绝缘间隔物并铺设在所述硅层上; 用绝缘层覆盖整个结构; 部分去除牺牲发射体上方的绝缘层并去除牺牲发射极; 用第一掺杂类型的半导体材料填充先前由牺牲发射极占据的空间。

6. 发明授权

US07226844B2 Method of manufacturing a bipolar transistor with a single-crystal base contact 有权
标题翻译：制造具有单晶基极接触的双极晶体管的方法
公开(公告)号：US07226844B2
公开(公告)日：2007-06-05
申请号：US11091950
申请日：2005-03-28
申请人： Alain Chantre , Pascal Chevalier
发明人： Alain Chantre , Pascal Chevalier
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/7378
摘要： A method forms a bipolar transistor in a semiconductor substrate of a first conductivity type. The method includes: forming on the substrate a single-crystal silicon-germanium layer; forming a heavily-doped single-crystal silicon layer of a second conductivity type; forming a silicon oxide layer; opening a window in the silicon oxide and silicon layers; forming on the walls of the window a silicon nitride spacer; removing the silicon-germanium layer from the bottom of the window; forming in the cavity resulting from the previous removal a heavily-doped single-crystal semiconductor layer of the second conductivity type; and forming in said window the emitter of the transistor.
摘要翻译：一种方法在第一导电类型的半导体衬底中形成双极晶体管。该方法包括：在衬底上形成单晶硅锗层; 形成第二导电类型的重掺杂单晶硅层; 形成氧化硅层; 在硅氧化物和硅层中开一个窗口; 在窗的壁上形成氮化硅间隔物; 从窗户的底部去除硅 - 锗层; 在先前去除的过程中形成在第二导电类型的重掺杂单晶半导体层的空腔中; 并在所述窗口中形成晶体管的发射极。

7. 发明授权

US07615455B2 Integrated circuit bipolar transistor 有权
标题翻译：集成电路双极晶体管
公开(公告)号：US07615455B2
公开(公告)日：2009-11-10
申请号：US11523770
申请日：2006-09-19
申请人： Pascal Chevalier , Alain Chantre
发明人： Pascal Chevalier , Alain Chantre
IPC分类号： H01L21/331 , H01L27/082
CPC分类号： H01L29/66242 , H01L29/0649 , H01L29/1004 , H01L29/66287 , H01L29/732 , H01L29/7378
摘要： A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.
摘要翻译：一种双极晶体管，具有由集电极区域的下表面固定并被第一绝缘层包围的基极区域，与基极区域的外部上部周边区域接触的基极接触导电区域，与第一绝缘区域接触的第二绝缘区域基极区域的中间上部周边区域，与基极区域的中心部分接触的发射极区域。中央部分的高度高于中间部分的高度。

8. 发明申请

US20070063314A1 Integrated circuit bipolar transistor 有权
标题翻译：集成电路双极晶体管
公开(公告)号：US20070063314A1
公开(公告)日：2007-03-22
申请号：US11523770
申请日：2006-09-19
申请人： Pascal Chevalier , Alain Chantre
发明人： Pascal Chevalier , Alain Chantre
IPC分类号： H01L27/082
CPC分类号： H01L29/66242 , H01L29/0649 , H01L29/1004 , H01L29/66287 , H01L29/732 , H01L29/7378
摘要： A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.
摘要翻译：一种双极晶体管，具有由集电极区域的下表面固定并被第一绝缘层包围的基极区域，与基极区域的外部上部周边区域接触的基极接触导电区域，与第一绝缘区域接触的第二绝缘区域基极区域的中间上部周边区域，与基极区域的中心部分接触的发射极区域。中央部分的高度高于中间部分的高度。

9. 发明申请

US20050215021A1 Method of manufacturing a bipolar transistor with a single-crystal base contact 有权
标题翻译：制造具有单晶基极接触的双极晶体管的方法
公开(公告)号：US20050215021A1
公开(公告)日：2005-09-29
申请号：US11091950
申请日：2005-03-28
申请人： Alain Chantre , Pascal Chevalier
发明人： Alain Chantre , Pascal Chevalier
IPC分类号： H01L21/331 , H01L21/8222 , H01L29/10 , H01L29/737
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/7378
摘要： A method forms a bipolar transistor in a semiconductor substrate of a first conductivity type. The method includes: forming on the substrate a single-crystal silicon-germanium layer; forming a heavily-doped single-crystal silicon layer of a second conductivity type; forming a silicon oxide layer; opening a window in the silicon oxide and silicon layers; forming on the walls of the window a silicon nitride spacer; removing the silicon-germanium layer from the bottom of the window; forming in the cavity resulting from the previous removal a heavily-doped single-crystal semiconductor layer of the second conductivity type; and forming in said window the emitter of the transistor.
摘要翻译：一种方法在第一导电类型的半导体衬底中形成双极晶体管。该方法包括：在衬底上形成单晶硅锗层; 形成第二导电类型的重掺杂单晶硅层; 形成氧化硅层; 在硅氧化物和硅层中开一个窗口; 在窗的壁上形成氮化硅间隔物; 从窗户的底部去除硅 - 锗层; 在先前去除的过程中形成在第二导电类型的重掺杂单晶半导体层的空腔中; 并在所述窗口中形成晶体管的发射极。

10. 发明授权

US07940856B2 Method and device for synchronizing rectilinear or quasi-rectilinear links in the presence of interference 有权
标题翻译：在存在干扰的情况下使直线或准直线链路同步的方法和装置
公开(公告)号：US07940856B2
公开(公告)日：2011-05-10
申请号：US11816906
申请日：2006-02-20
申请人： Pascal Chevalier , Pipon Francois , François Delaveau
发明人： Pascal Chevalier , Pipon Francois , François Delaveau
IPC分类号： H04L27/00
CPC分类号： H04L7/0054 , H04J3/0602 , H04L7/041 , H04L7/042
摘要： A method of synchronizing a substantially rectilinear signal being propagated through an unknown channel, in the presence of unknown substantially rectilinear interferences, received by an array of N sensors, in which a known training sequence s(nT) is used comprising K symbols and sampled at the symbol rate T (s(nT), 0≦n≦{tilde over (K)}1), characterized in that, based on observations x((n+l/p)T) over the duration of the training sequence, where p=T/Te is an integer and Te the sampling period, a virtual observation vector X((n+l/p)T)=[x((n+l/p)T)T, x((n+l/p)T)†]T is defined, as well as a decision criterion or decision statistic taking into account the second-order non-circular nature of the interferences, by using the first and second correlation matrices of the virtual observation vector X((n+l/p)T).
摘要翻译：一种使由N个传感器阵列接收的未知基本上直线干扰的未知信道传播的基本直线信号同步的方法，其中使用已知的训练序列s（nT），其包括K个符号，并在符号率T（s（nT），0＆nlE; n＆nlE; {tilde over（K）} 1），其特征在于，在训练序列的持续时间内基于观察值x（（n + 1 / p）T）其中p = T / Te是整数，Te是采样周期，虚拟观测矢量X（（n + 1 / p）T）= [x（（n + 1 / p）T）T，x（（n + 通过使用虚拟观测向量X的第一和第二相关矩阵来定义考虑到干扰的二阶非循环性质的判定标准或判定统计量，（（n + 1 / p）T）。

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