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    • 3. 发明授权
    • Method for manufacture of a blue-sensitive photodetector
    • 蓝光敏感光电检测器的制造方法
    • US5424222A
    • 1995-06-13
    • US196565
    • 1994-02-15
    • Wolfgang Arndt
    • Wolfgang Arndt
    • H01L31/09H01L21/265H01L31/0216H01L31/10H01L31/103H01L31/18H01L31/00
    • H01L21/2652H01L31/02161H01L31/103H01L31/1804Y02E10/547Y02P70/521
    • The method in accordance with the invention is characterized by the steps of before an ion implantation, a dielectric diffusing layer array is formed on a substrate that has at least one oxide layer and is thick enough for the maximum of implanted ions to be inside the layer array; and post-diffusion is implemented such that no further oxidation of the substrate is possible. By these measures, it is achieved that within the semiconductor substrate the doping continually decreases towards the pn-junction, apart from a very narrow segregation area, the result being an electrical field that conducts substantially all charge carriers generated in the area between the surface of the substrate and the pn-junction to this pn-junction. This achieves a quantum efficiency in the short-wave range that is considerably greater than that achievable with conventional photodetectors.
    • 根据本发明的方法的特征在于以下步骤:在离子注入之前,在具有至少一个氧化物层的基底上形成电介质漫射层阵列,并且足够厚以使最多注入的离子在层内 阵列 并且实施后扩散,使得不可能进一步氧化基底。 通过这些措施,实现了在半导体衬底内,除了非常窄的偏析区域之外,掺杂持续地朝向pn结减小,结果是导致基本上所有电荷载流子的电场,所述电荷载体在 衬底和pn结到该pn结。 这实现了在短波范围内的量子效率,其显着大于常规光电探测器可实现的量子效率。