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    • 5. 发明授权
    • Thin film transistor array panel and manufacturing method thereof
    • 薄膜晶体管阵列面板及其制造方法
    • US07846784B2
    • 2010-12-07
    • US11346717
    • 2006-02-03
    • Beom-Jun KimSun-Ok SongMyung-Koo Hur
    • Beom-Jun KimSun-Ok SongMyung-Koo Hur
    • H01L21/00
    • H01L29/41733H01L27/124H01L27/1288H01L29/458
    • A method of manufacturing a thin film transistor array panel includes forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming an ohmic contact layer on the semiconductor layer, and forming a data line including a source electrode and a drain electrode on the ohmic contact layer. The method further includes depositing a conductive film on the data line and the drain electrode, forming a first photoresist on the conductive film, etching the conductive film using the first photoresist as a mask to form a pixel electrode at least connected to the drain electrode, depositing a passivation layer, and removing the first photoresist to form a passivation member.
    • 一种制造薄膜晶体管阵列面板的方法包括:在衬底上形成包括栅电极的栅极线,在栅极线上形成栅极绝缘层,在栅极绝缘层上形成半导体层,在该栅极绝缘层上形成欧姆接触层 半导体层,并且在欧姆接触层上形成包括源电极和漏电极的数据线。 该方法还包括在数据线和漏电极上沉积导电膜,在导电膜上形成第一光致抗蚀剂,使用第一光致抗蚀剂作为掩模蚀刻导电膜,以形成至少连接到漏电极的像素电极, 沉积钝化层,并除去第一光致抗蚀剂以形成钝化部件。