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    • 7. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US08164719B2
    • 2012-04-24
    • US12445153
    • 2007-06-21
    • Hiromi KatohHiroyuki OgawaChristopher BrownBenjamin James Hadwen
    • Hiromi KatohHiroyuki OgawaChristopher BrownBenjamin James Hadwen
    • G02F1/1333G02F1/133
    • G02F1/136209G02F2001/13312G02F2202/10H01L31/02164
    • The present invention provides a liquid crystal display device capable of preventing the occurrence of dark currents in photodiodes. Thus, the liquid crystal display device includes a liquid crystal display panel 1 including an active matrix substrate and a backlight 13 for illuminating the liquid crystal display panel. The active matrix substrate 1 includes a photodiode 7 formed by a silicon film and a light shielding film 8 for shielding the photodiode 7 against illumination light from the backlight 13. The photodiode 7 and the light shielding film 8 are provided on a base substrate 5. The light shielding film 8 is formed by a semiconductor or an insulator. Preferably, the photodiode 7 is made of, for example, polycrystalline silicon or continuous grain silicon so as to have a characteristic that its sensitivity increases as the wavelength of light entering the photodiode becomes shorter. The light-shielding film 8 is formed by a silicon film, for example amorphous silicon, that reduces the transmittance of light entering the light shielding film as the wavelength of the light becomes shorter.
    • 本发明提供能够防止光电二极管中的暗电流发生的液晶显示装置。 因此,液晶显示装置包括:液晶显示面板1,其包括有源矩阵基板和用于照亮液晶显示面板的背光源13。 有源矩阵基板1包括由硅膜形成的光电二极管7和用于屏蔽来自背光源13的照明光的光电二极管7的遮光膜8.光电二极管7和遮光膜8设置在基底基板5上。 遮光膜8由半导体或绝缘体形成。 优选地,光电二极管7例如由多晶硅或连续晶粒硅制成,以具有随着进入光电二极管的光的波长变短的灵敏度而增加的特性。 遮光膜8由硅膜(例如非晶硅)形成,其随着光的波长变短而降低进入遮光膜的光的透射率。
    • 10. 发明申请
    • DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 显示装置及其制造方法
    • US20100181570A1
    • 2010-07-22
    • US12668866
    • 2008-07-11
    • Hiromi KatohBenjamin James Hadwen
    • Hiromi KatohBenjamin James Hadwen
    • H01L33/00
    • H01L27/1214G02F1/1368G02F2001/13312H01L27/12H01L31/1055
    • An active matrix substrate in which variations in output characteristics of photodiodes are reduced, and a display device using this active matrix substrate, are provided. An active matrix substrate (1) having an n-TFT (20), a p-TFT (30), and a photodiode (10) is used. The photodiode (10) includes a p-layer (7), an i-layer (8), and an n-layer (9). The i-layer (8) includes a p-type semiconductor region (8a) at a position adjacent to the player (7), said p-type semiconductor region (8a) having a diffusion concentration of p-type impurities that is set at the same level as that of a diffusion concentration of p-type impurities in the channel region (23) of the n-TFT (20); and an n-type semiconductor region (8b) at a position adjacent to the n-layer (9), said n-type semiconductor region (8b) having a diffusion concentration of n-type impurities that is set at the same level as that of a diffusion concentration of n-type impurities in the channel region (33) of the p-TFT (30).
    • 提供其中光电二极管的输出特性的变化减小的有源矩阵基板和使用该有源矩阵基板的显示装置。 使用具有n-TFT(20),p-TFT(30)和光电二极管(10)的有源矩阵基板(1)。 光电二极管(10)包括p层(7),i层(8)和n层(9)。 i层(8)在与播放器(7)相邻的位置处包括p型半导体区域(8a),所述p型半导体区域(8a)具有p型杂质的扩散浓度, 与n-TFT(20)的沟道区域(23)中的p型杂质的扩散浓度相同的水平; 和与n层(9)相邻的位置处的n型半导体区域(8b),所述n型半导体区域(8b)具有与所述n型半导体区域(8b)相同的n型杂质的扩散浓度, 在p-TFT(30)的沟道区域(33)中的n型杂质的扩散浓度。