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    • 1. 发明授权
    • Stepped masking for patterned implantation
    • 步进屏蔽图案植入
    • US08569157B2
    • 2013-10-29
    • US13442571
    • 2012-04-09
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • H01L21/425
    • H01L21/266H01J37/3172H01L31/1804Y02E10/547Y02P70/521
    • An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
    • 公开了一种移动掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔,并且被放置在离子源和基底之间。 在将衬底暴露于离子束之后,掩模被引导到相对于衬底的新位置,并且执行随后的注入步骤。 通过选择孔径尺寸和形状,指数距离和植入步骤的数量,可以产生各种种植体图案。 在一些实施例中,注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中,植入模式包括重掺杂区域格栅。 在其它实施例中,植入图案适用于汇流条结构。
    • 2. 发明授权
    • Stepped masking for patterned implantation
    • 步进屏蔽图案植入
    • US08173527B2
    • 2012-05-08
    • US12906369
    • 2010-10-18
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • H01L21/425
    • H01L21/266H01J37/3172H01L31/1804Y02E10/547Y02P70/521
    • An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
    • 公开了一种移动掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔,并且被放置在离子源和基底之间。 在将衬底暴露于离子束之后,掩模被引导到相对于衬底的新位置,并且执行随后的注入步骤。 通过选择孔径尺寸和形状,指数距离和植入步骤的数量,可以产生各种种植体图案。 在一些实施例中,注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中,植入模式包括重掺杂区域格栅。 在其它实施例中,植入图案适用于汇流条结构。