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1. 发明授权

US07212454B2 Method and apparatus for programming a memory array 有权
标题翻译：用于编程存储器阵列的方法和装置
公开(公告)号：US07212454B2
公开(公告)日：2007-05-01
申请号：US11158396
申请日：2005-06-22
申请人： Bendik Kleveland , Tae Hee Lee , Seung Geon Yu , Chia Yang , Feng Li , Xiaoyu Yang
发明人： Bendik Kleveland , Tae Hee Lee , Seung Geon Yu , Chia Yang , Feng Li , Xiaoyu Yang
IPC分类号： G11C29/00
CPC分类号： G11C29/816 , G11C17/14
摘要： A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, the word line is repaired with a redundant word line. The word lines are then reprogrammed and rechecked for defects. In another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, that word line is repaired along with a previously-programmed adjacent word line. In yet another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line and a previously-programmed adjacent word line. If a defect is detected on that word line, that word line and the previously-programmed adjacent word line are repaired with redundant word lines.
摘要翻译：公开了一种用于对存储器阵列进行编程的方法和装置。在一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。如果检测到缺陷，则用冗余字线修复字线。字线然后被重新编程并重新检查缺陷。在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。如果检测到缺陷，则该字线与预先编程的相邻字线一起被修复。在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷和预先编程的相邻字线。如果在该字线上检测到缺陷，则该字线和先前编程的相邻字线用冗余字线修复。

2. 发明申请

US20060291303A1 Method and apparatus for programming a memory array 有权
标题翻译：用于编程存储器阵列的方法和装置
公开(公告)号：US20060291303A1
公开(公告)日：2006-12-28
申请号：US11158396
申请日：2005-06-22
申请人： Bendik Kleveland , Tae Lee , Seung Yu , Chia Yang , Feng Li , Xiaoyu Yang
发明人： Bendik Kleveland , Tae Lee , Seung Yu , Chia Yang , Feng Li , Xiaoyu Yang
IPC分类号： G11C29/00
CPC分类号： G11C29/816 , G11C17/14
摘要： A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, the word line is repaired with a redundant word line. The word lines are then reprogrammed and rechecked for defects. In another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, that word line is repaired along with a previously-programmed adjacent word line. In yet another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line and a previously-programmed adjacent word line. If a defect is detected on that word line, that word line and the previously-programmed adjacent word line are repaired with redundant word lines.
摘要翻译：公开了一种用于对存储器阵列进行编程的方法和装置。在一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。如果检测到缺陷，则用冗余字线修复字线。字线然后被重新编程并重新检查缺陷。在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷。如果检测到缺陷，则该字线与预先编程的相邻字线一起被修复。在另一个实施例中，在每个字线被编程之后，尝试检测该字线上的缺陷和预先编程的相邻字线。如果在该字线上检测到缺陷，则该字线和先前编程的相邻字线用冗余字线修复。

3. 发明授权

US08314023B2 Methods involving memory with high dielectric constant antifuses adapted for use at low voltage 有权
标题翻译：涉及具有适合在低电压下使用的高介电常数反熔丝的存储器的方法
公开(公告)号：US08314023B2
公开(公告)日：2012-11-20
申请号：US12367258
申请日：2009-02-06
申请人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
发明人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC分类号： H01L21/44
CPC分类号： H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
摘要翻译：方法包括使用具有包含二极管和反熔丝的存储单元的存储器阵列，其中通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝，其中反熔丝被制成较小的并以较低的电压编程，以及其中二极管由具有比硅的带隙低的带隙的材料制成。这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。带隙低于硅的二极管材料如锗或硅 - 锗合金是特别有效的。

4. 发明申请

US20100276660A1 MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE 有权
标题翻译：具有适用于低电压使用的高介电常数抗体的存储器
公开(公告)号：US20100276660A1
公开(公告)日：2010-11-04
申请号：US12836320
申请日：2010-07-14
申请人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
发明人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC分类号： H01L45/00
CPC分类号： H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.
摘要翻译：提供存储单元，其包括与二极管串联耦合的二极管和电阻切换材料层。电阻切换材料层：（a）的介电常数在约5至约27的范围内，（b）包括由XvOw组成的族的材料，其中X表示由Hf和 Zr，并且其中下标v和w具有形成稳定化合物的非零值。还提供其他方面。

5. 发明授权

US07781805B2 Memory with high dielectric constant antifuses adapted for use at low voltage 有权
标题翻译：具有适用于低电压使用的高介电常数反熔丝的存储器
公开(公告)号：US07781805B2
公开(公告)日：2010-08-24
申请号：US12367214
申请日：2009-02-06
申请人： Xiaoyu Yang , Roy E. Scheurelein , Feng Li , Albert T. Meeks
发明人： Xiaoyu Yang , Roy E. Scheurelein , Feng Li , Albert T. Meeks
IPC分类号： H01L29/66
CPC分类号： H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
摘要翻译：通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝材料，并且通过使用具有较低的二极管的二极管，可以使具有包括二极管和反熔丝的存储单元的存储器阵列更小并以较低的电压编程带隙比硅。这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。带隙低于硅的二极管材料如锗或硅 - 锗合金是特别有效的。

6. 发明申请

US20090141535A1 METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE 有权
标题翻译：涉及适用于低电压使用的高介电常数抗体的记忆体的方法
公开(公告)号：US20090141535A1
公开(公告)日：2009-06-04
申请号：US12367258
申请日：2009-02-06
申请人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
发明人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC分类号： G11C17/16 , G11C17/00 , G11C17/06 , G11C7/00 , H01L21/00
CPC分类号： H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
摘要翻译：方法包括使用具有包含二极管和反熔丝的存储单元的存储器阵列，其中通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝，其中反熔丝被制成较小的并以较低的电压编程，以及其中二极管由具有比硅的带隙低的带隙的材料制成。这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。带隙低于硅的二极管材料如锗或硅 - 锗合金是特别有效的。

7. 发明授权

US08350299B2 Memory with high dielectric constant antifuses adapted for use at low voltage 有权
标题翻译：具有适用于低电压使用的高介电常数反熔丝的存储器
公开(公告)号：US08350299B2
公开(公告)日：2013-01-08
申请号：US12836320
申请日：2010-07-14
申请人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
发明人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC分类号： H01L29/66
CPC分类号： H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.
摘要翻译：提供存储单元，其包括与二极管串联耦合的二极管和电阻切换材料层。电阻切换材料层：（a）的介电常数在约5至约27的范围内，（b）包括由XvOw组成的族的材料，其中X表示由Hf和 Zr，并且其中下标v和w具有形成稳定化合物的非零值。还提供其他方面。

8. 发明申请

US20090140299A1 MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE 有权
标题翻译：具有适用于低电压使用的高介电常数抗体的存储器
公开(公告)号：US20090140299A1
公开(公告)日：2009-06-04
申请号：US12367214
申请日：2009-02-06
申请人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
发明人： Xiaoyu Yang , Roy E. Scheuerlein , Feng Li , Albert T. Meeks
IPC分类号： H01L29/66 , H01L23/525
CPC分类号： H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.
摘要翻译：通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝材料，并且通过使用具有较低的二极管的二极管，可以使具有包括二极管和反熔丝的存储单元的存储器阵列更小并以较低的电压编程带隙比硅。这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。带隙低于硅的二极管材料如锗或硅 - 锗合金是特别有效的。

9. 发明申请

US20070069241A1 Memory with high dielectric constant antifuses and method for using at low voltage 审中-公开
标题翻译：高介电常数反熔丝的存储器和低电压使用的方法
公开(公告)号：US20070069241A1
公开(公告)日：2007-03-29
申请号：US11173973
申请日：2005-07-01
申请人： Xiaoyu Yang , Roy Scheuerlein , Feng Li , Albert Meeks
发明人： Xiaoyu Yang , Roy Scheuerlein , Feng Li , Albert Meeks
IPC分类号： H01L27/10 , H01L21/82
CPC分类号： H01L45/12 , G11C17/00 , G11C17/16 , H01L23/5252 , H01L27/101 , H01L45/04 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using antifuse materials having higher dielectric constant and higher acceleration factor than silicon dioxide, and by using diodes having lower band gaps than silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example hafnium silicon oxynitride or hafnium silicon oxide are particularly effective. Diode materials with band gaps lower than silicon, such as germanium or a silicon-germanium alloy are particularly effective.
摘要翻译：通过使用具有比二氧化硅更高的介电常数和更高的加速因子的反熔丝材料，并且通过使用具有比硅更低的带隙的二极管，可以使具有包括二极管和反熔丝的存储单元的存储器阵列更小并且在较低的电压下编程。这样的存储器阵列可以通过使用高加速因子和较低带隙材料而具有长的工作寿命。具有介于5和27之间的介电常数的防腐材料，例如铪硅氮氧化物或氧化铪铪是特别有效的。带隙低于硅的二极管材料，例如锗或硅 - 锗合金是特别有效的。

10. 发明授权

US10337700B2 Bolt locking structure for waterproof LED lamp 有权
公开(公告)号：US10337700B2
公开(公告)日：2019-07-02
申请号：US15310791
申请日：2015-09-17
申请人： Feng Li
发明人： Feng Li
IPC分类号： F21V15/01 , F21V31/00 , F21V17/10 , F21Y115/10
摘要： A bolt locking structure for a waterproof LED lamp contains: a first casing and a second casing. The first casing includes multiple first protrusions and multiple first recesses which are arranged on each of four peripheral walls thereof respectively. The second casing includes multiple second protrusions and multiple second recesses which are arranged on each of four peripheral walls thereof respectively. The multiple first protrusions retain with the multiple second recesses, and the multiple first recesses retain with the multiple second protrusions. Multiple through holes are coaxial and form on each peripheral wall of each of the first casing and the second casing respectively, wherein each of the multiple through holes passes through each of the multiple first protrusions and the multiple second protrusions, such that each of multiple connection bolts inserts into the multiple through holes, thus locking the first casing and the second casing together.

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