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    • 1. 发明授权
    • Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
    • 用于形成硅光伏电池的多层电极结构的方法
    • US07833808B2
    • 2010-11-16
    • US12054034
    • 2008-03-24
    • Baomin XuKarl A. LittauDavid K. Fork
    • Baomin XuKarl A. LittauDavid K. Fork
    • H01L21/00H01L31/00
    • H01L31/022425H01L31/18Y02E10/50
    • Methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.
    • 用于形成光伏电池电极结构的方法,其中所述光伏电池包括其上具有钝化层的半导体衬底,包括提供穿过所述钝化层到所述半导体衬底的多个接触开口,选择性地将接触金属电镀到所述多个接触开口 沉积接触金属,在沉积的接触金属上沉积含金属的材料,并焙烧沉积的接触金属和沉积的含金属的材料。 含金属的材料可以包括含有银或银合金以及玻璃料的糊状物,并且基本上没有完全不含铅。 所述方法还可以使用钝化层的光激活或使用种子层来辅助镀覆。
    • 8. 发明授权
    • Solar cell metallization using inline electroless plating
    • 使用在线化学镀的太阳能电池金属化
    • US09150966B2
    • 2015-10-06
    • US12271408
    • 2008-11-14
    • Baomin XuKarl A. LittauScott A. Elrod
    • Baomin XuKarl A. LittauScott A. Elrod
    • B05D5/12C25D5/34H01B13/00C23C18/16C23C18/31H01L31/0224
    • C23C18/161C23C18/1632C23C18/165C23C18/1651C23C18/1653C23C18/31H01L31/022425Y02E10/50
    • Inline methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings by printing electroless plating solution into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.
    • 用于形成光伏电池电极结构的在线方法,其中所述光伏电池包括其上具有钝化层的半导体衬底,包括提供通过所述钝化层到所述半导体衬底的多个接触开口,选择性地将接触金属电镀到所述多个接触中 通过将化学镀溶液印刷到多个接触开口中以沉积接触金属,在沉积的接触金属上沉积含金属的材料,以及烧结沉积的接触金属和沉积的含金属材料的开口。 含金属的材料可以包括含有银或银合金以及玻璃料的糊状物,并且基本上没有完全不含铅。 所述方法还可以使用钝化层的光激活或使用种子层来辅助镀覆。
    • 10. 发明申请
    • Methods to make piezoelectric ceramic thick film array and single elements and devices
    • 制造压电陶瓷厚膜阵列和单元件和器件的方法
    • US20090113685A1
    • 2009-05-07
    • US11363849
    • 2006-02-28
    • Baomin XuSteven A. BuhlerMichael C. WelsbergWilliam S. WongScott E. SolbergKarl A. LittauJohn S. FitchScott A. Elrod
    • Baomin XuSteven A. BuhlerMichael C. WelsbergWilliam S. WongScott E. SolbergKarl A. LittauJohn S. FitchScott A. Elrod
    • H04R17/00
    • B41J2/161B41J2/1623B41J2/1632B41J2/1634B41J2/1637B41J2/1646H01L41/313H01L41/314H01L41/331H01L2221/68368Y10T29/42Y10T29/435Y10T29/49128Y10T29/4913Y10T29/49133Y10T29/49155Y10T29/4981
    • A method of producing at least one piezoelectric element includes depositing a piezoelectric ceramic material onto a surface of a first substrate to form at least one piezoelectric element structure. Then an electrode is deposited on a surface of the at least one piezoelectric element structure. Next, the at least one piezoelectric element structure is bonded to a second substrate, the second substrate being conductive or having a conductive layer. The first substrate is then removed from the at least one piezoelectric element structure and a second side electrode is deposited on a second surface of the at least one piezoelectric element structure. A poling operation is performed to provide the at least one piezoelectric element structure with piezoelectric characteristics.In another embodiment, a material for a thick film element is deposited onto a surface of a first substrate to form a thick film element structure having a thickness of between greater than 10 μm to 100 μm. The at least one thick film element structure is bonded to a second substrate. Thereafter, the first substrate is removed from the at least one thick film element structure using a liftoff process which includes emitting, from a radiation source (such as a laser or other appropriate device), a beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the surface of the first substrate. The first substrate is substantially transparent at the wavelength of the beam, and the beam generates sufficient energy at the interface to break the attachment.
    • 制造至少一个压电元件的方法包括将压电陶瓷材料沉积到第一基板的表面上以形成至少一个压电元件结构。 然后在至少一个压电元件结构的表面上沉积电极。 接下来,将至少一个压电元件结构接合到第二基板,第二基板是导电的或具有导电层。 然后从至少一个压电元件结构去除第一衬底,并且第二侧电极沉积在至少一个压电元件结构的第二表面上。 执行极化操作以向至少一个压电元件结构提供压电特性。 在另一个实施例中,用于厚膜元件的材料沉积到第一基底的表面上以形成厚度大于10um至100μm的厚膜元件结构。 所述至少一个厚膜元件结构被结合到第二基板。 此后,使用包括从辐射源(例如激光或其它合适的装置)发射通过第一基板的光束到形成的附接接口的剥离过程,从至少一个厚膜元件结构中去除第一基板, 在第一基板和第一基板的表面处的至少一个厚膜元件结构之间。 第一衬底在光束的波长处基本上是透明的,并且光束在界面处产生足够的能量以破坏附件。