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    • 1. 发明授权
    • Techniques for improving droplet uniformity in acoustic ink printing
    • 提高声墨印刷液滴均匀性的技术
    • US5389956A
    • 1995-02-14
    • US931804
    • 1992-08-18
    • Babur B. HadimiogluButrus T. Khuri-YakubRichard L. WeisfieldEric G. Rawson
    • Babur B. HadimiogluButrus T. Khuri-YakubRichard L. WeisfieldEric G. Rawson
    • B41J2/015B41J2/14B41J2/04
    • B41J2/14008
    • Techniques for improving droplet uniformity in acoustic ink printing. Row to row variations in an average droplet characteristic are reduced by controlling the electric power applied to the droplet ejectors of the individual rows. By applying the proper power to each row, the average droplet characteristic from the individual rows are made substantially. Another technique varies the efficiency of the individual droplet ejectors by physically trimming (such as with a laser) one or more of its components. Trimming may be performed on a droplet ejector's transducer, varactor, one or more associated resistors, or one or more capacitors. Yet another technique controls droplet ejector efficiency by electrically controlling the capacitance of a varactor associated with each droplet ejector, and thus each droplet ejector's efficiency. The voltage applied to each varactor may be controlled as a function of its column (to improve column to column uniformity), row (to improve row to row uniformity) or as a function of its column and row (to control the efficiency of the individual droplet ejector).
    • 提高声墨印刷液滴均匀性的技术。 通过控制施加到各行的液滴喷射器的电力来减小平均液滴特性中的行排列变化。 通过对每行施加适当的功率,基本上实现来自各行的平均液滴特性。 另一种技术通过物理地修整(例如用激光)其一个或多个组件来改变各个液滴喷射器的效率。 可以在液滴喷射器的换能器,变容二极管,一个或多个相关联的电阻器或一个或多个电容器上执行修整。 另一种技术通过电控制与每个液滴喷射器相关联的变容二极管的电容以及因此每个液滴喷射器的效率来控制液滴喷射器的效率。 施加到每个变容二极管的电压可以作为其列的函数来控制(以提高列到列的均匀性),行(以提高行到行均匀性)或者作为其列和行的函数(以控制个体的效率 液滴喷射器)。
    • 2. 发明授权
    • Sensor array with anticoupling layer between data lines and charge
collection electrodes
    • 传感器阵列与数据线和电荷收集电极之间具有抗交叠层
    • US5770871A
    • 1998-06-23
    • US667198
    • 1996-06-20
    • Richard L. Weisfield
    • Richard L. Weisfield
    • G01T1/00G01T1/24G09F9/33H01L21/768H01L23/522H01L27/14H01L27/146H01L31/00
    • H01L27/14609H01L27/146
    • A sensor array has cells, each with a sensing element and a switching element. The sensing element includes a charge collection electrode. An anticoupling layer between the charge collection electrodes and the data lines is structured to reduce capacitive coupling between the electrodes and the data lines below a threshold level at which crosstalk is unacceptable. If charge collection electrodes overlap data lines, the anticoupling layer can reduce capacitive coupling so that crosstalk is no greater than 2%. The anticoupling layer can be a dielectric layer with dielectric constant less than 6 and with thickness greater than 1.5 .mu.m, with the dielectric constant being sufficiently low and the thickness sufficiently great that the anticoupling layer reduces capacitive coupling below the threshold level. Or the anticoupling layer can include a fixed potential sublayer of conductive material, electrically connected to circuitry that holds it at a fixed potential; the fixed potential sublayer therefore reduces capacitive coupling below the threshold level.
    • 传感器阵列具有单元,每个单元具有感测元件和开关元件。 感测元件包括电荷收集电极。 电荷收集电极和数据线之间的抗叠层被构造成减少电极和数据线之间的电容耦合,低于不能接受串扰的阈值电平。 如果电荷收集电极与数据线重叠,则抗反堆层可以减少电容耦合,使得串扰不大于2%。 抗真空层可以是介电常数小于6且厚度大于1.5μm的电介质层,其介电常数足够低,并且厚度足够大,使得抗叠层降低低于阈值电平的电容耦合。 或者抗组织层可以包括导电材料的固定电位子层,电连接到将其固定在固定电位的电路; 固定电位子层因此降低低于阈值电平的电容耦合。
    • 5. 发明授权
    • Layered solid state photodiode sensor array
    • 层状固态光电二极管传感器阵列
    • US5619033A
    • 1997-04-08
    • US483406
    • 1995-06-07
    • Richard L. Weisfield
    • Richard L. Weisfield
    • H01L27/146H01J40/14
    • H01L27/14643
    • A photodetecting device and a method for constructing the photodetecting device. The photodetecting device provides at least one transistor formed over a substrate and at least one photodiode formed over the at least one transistor. Each of the at least one photodiode is coupled to one of the at least one transistor. The fill factor of the photodiode is very high even when the resolution of the photodetecting device is increased. The photodetecting devices are formed in a matrix having rows and columns. The matrix of photodetecting devices forms a two dimensional imaging device.
    • 光电检测装置及构成光检测装置的方法。 光检测器件提供形成在衬底上的至少一个晶体管和形成在至少一个晶体管上的至少一个光电二极管。 所述至少一个光电二极管中的每一个耦合到所述至少一个晶体管中的一个。 即使增加了光电检测装置的分辨率,光电二极管的填充率也非常高。 光检测器件形成为具有行和列的矩阵。 光检测装置的矩阵形成二维成像装置。
    • 6. 发明授权
    • Array circuitry with conductive lines, contact leads, and storage
capacitor electrode all formed in layer that includes highly conductive
metal
    • 具有导线,接触引线和存储电容器电极的阵列电路全部形成在包括高导电性金属的层中
    • US5648674A
    • 1997-07-15
    • US474845
    • 1995-06-07
    • Richard L. WeisfieldNizar S. KherajMai T. Nguyen
    • Richard L. WeisfieldNizar S. KherajMai T. Nguyen
    • H01L27/146H01L31/0224H01L31/119G01T1/24
    • H01L27/146H01L31/022466
    • A product such as an x-ray sensor array includes, for each unit of cell circuitry, a capacitor with upper and lower electrodes. A conductive layer that includes highly conductive metal such as aluminum is patterned to include the upper electrode of the capacitor, the contact leads of a switching element, and the data lines of the array. The upper electrode has an exposed area due to an opening in an insulating layer over it. A conductive element, such as an ITO island, is formed over the insulating layer, contacting the exposed area of the upper electrode so that the conductive element is electrically connected to one of the contact leads of the switching element through the upper electrode. The conductive elements of adjacent units can be separated by the minimum spacing necessary to ensure isolation. Or each unit's conductive element can be offset slightly from the data and scan lines and can also be pulled back from the channel of the switching element, which can be a TFT.
    • 对于每个单元电路单元,诸如x射线传感器阵列的产品包括具有上电极和下电极的电容器。 包括高导电性金属如铝的导电层被图形化以包括电容器的上电极,开关元件的接触引线和阵列的数据线。 上电极由于在其上的绝缘层中的开口而具有暴露区域。 导电元件例如ITO岛形成在绝缘层上,与上电极的暴露区域接触,使得导电元件通过上电极电连接到开关元件的接触引线之一。 相邻单元的导电元件可以分开所需的最小间隔以确保隔离。 或者每个单元的导电元件可以与数据和扫描线略微偏移,并且还可以从可以是TFT的开关元件的通道拉回。
    • 8. 发明授权
    • Device and method for reducing lag and blooming in amorphous silicon sensor arrays
    • 用于减少非晶硅传感器阵列中滞后和起霜的装置和方法
    • US06856351B1
    • 2005-02-15
    • US09397040
    • 1999-09-16
    • Richard L. Weisfield
    • Richard L. Weisfield
    • H01L27/12H04N5/359H04N5/369H04N3/14H04N5/335
    • H01L27/12H04N5/3597
    • A clamping circuit including a clamping diode, a bias line, and a clamp line is incorporated into a pixel circuit of amorphous silicon sensor arrays. The clamp diode in each pixel prevents the voltage across the photodiode from dropping below a specific threshold. By keeping the photodiode under reverse bias even under conditions that may otherwise saturate the pixel, image lag is reduced. In full fill factor amorphous silicon sensor arrays, a clamping circuit includes a clamp TFT, a bias plane, a clamp line, and a drain line. The clamp TFT reduces lag and blooming by draining off excess current developed under overexposure conditions. A method to globally reset a sensor array and a method to test and repair a TFT matrix in full fill factor sensor arrays without damaging the overlying collection electrode and sensor layer are also provided.
    • 包括钳位二极管,偏置线和钳位线的钳位电路并入非晶硅传感器阵列的像素电路中。 每个像素中的钳位二极管可防止光电二极管两端的电压降至特定阈值以下。 即使在可能使像素饱和的条件下,通过将光电二极管保持在反向偏压下,图像滞后也减小。 在全填充因子非晶硅传感器阵列中,钳位电路包括钳位TFT,偏置平面,钳位线和漏极线。 钳位TFT通过排除在过度曝光条件下产生的过电流来减少滞后和起霜。 还提供了一种全局重置传感器阵列的方法以及在完全填充因子传感器阵列中测试和修复TFT矩阵而不损坏上覆收集电极和传感器层的方法。
    • 10. 发明授权
    • Pixel elements having resistive divider elements
    • 具有电阻分压元件的像素元件
    • US5572344A
    • 1996-11-05
    • US368131
    • 1995-01-03
    • Warren B. JacksonDavid K. BiegelsenDavid A. JaredRichard L. Weisfield
    • Warren B. JacksonDavid K. BiegelsenDavid A. JaredRichard L. Weisfield
    • G02F1/133G02F1/1343G09F9/30G02F1/1393
    • G02F1/134309
    • Pixel elements capable of imaging spatial intensity variations within themselves, and displays comprised of such elements, are described. The pixel elements include a resistance layer disposed between at least one set of electrodes. Over that resistance layer is a liquid crystal material. Over that liquid crystal material is a field electrode. In operation a voltage, whose components are referenced to the field electrode, is applied across the resistance layer. The resulting current flow induces a spatially varying electric field between the field electrode and the resistance layer. That spatially varying electric field results in a corresponding response by the liquid crystal layer which results in a spatially varying light transmission through the liquid crystal material. By varying the voltage across the resistance layer and/or the voltage applied to the field electrode varying amounts of light transmission can be achieved.
    • 描述了能够对其内的空间强度变化进行成像的像素元件以及由这些元件组成的显示器。 像素元件包括设置在至少一组电极之间的电阻层。 在该电阻层之上是液晶材料。 在该液晶材料上是场电极。 在操作中,其分量参考场电极的电压跨越电阻层施加。 所得到的电流在场电极和电阻层之间引起空间变化的电场。 该空间变化的电场导致液晶层的相应响应,这导致通过液晶材料的空间变化的光透射。 通过改变跨越电阻层的电压和/或施加到场电极的电压可以实现不同的光透射量。