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1. 发明授权

US06633119B1 Field emission device having metal hydride hydrogen source 失效
标题翻译：具有金属氢化物氢源的场致发射器件
公开(公告)号：US06633119B1
公开(公告)日：2003-10-14
申请号：US09572529
申请日：2000-05-17
申请人： Babu R. Chalamala , Robert H. Reuss
发明人： Babu R. Chalamala , Robert H. Reuss
IPC分类号： H01J162
CPC分类号： H01J29/94 , H01J2329/00
摘要： A field emission display (100, 200) includes a cathode plate (102, 302), an anode plate (104, 204, 304), and a hydrogen source (146, 148, 129, 150, 246, 346, 270), which is preferably disposed on cathode plate (102, 302) or anode plate (104, 204, 304). Hydrogen source (146, 148, 129, 150, 246, 346, 270) is distributed over the active area of field emission display (100, 200) and is made from a metal hydride, which is selected from the group consisting of titanium hydride, vanadium hydride, zirconium hydride, hafnium hydride, niobium hydride, and tantalum hydride. The metal hydride can be activated to provide an isotope of hydrogen in situ.
摘要翻译：场致发射显示器（ 100,200 ）包括阴极板（ 102,302 ），），和氢源（ 146,148,129,150,246,346,270 ＆lt; PDAT＆gt;＆lt; PDAT＆gt; 104,204,304＆lt; ），其优选地设置在阴极板（ 102,302 PDAT>）或阳极板（ 104,204,304 ）。氢源（ 146,148,129,150,246,346,270 ）分布在场发射显示的有效区域（ 100,200 由金属氢化物制成，该金属氢化物选自氢化钛，氢化钒，氢化锆，氢化铪，氢化铌和氢化钽。可以活化金属氢化物以提供原位的氢同位素

2. 发明授权

US06645028B1 Method for improving uniformity of emission current of a field emission device 失效
标题翻译：改善场致发射装置的发射电流均匀性的方法
公开(公告)号：US06645028B1
公开(公告)日：2003-11-11
申请号：US09589018
申请日：2000-06-07
申请人： Kenneth A. Dean , Babu R. Chalamala
发明人： Kenneth A. Dean , Babu R. Chalamala
IPC分类号： H01J944
CPC分类号： B82Y10/00 , H01J1/304
摘要： A method for improving uniformity of emission current of a field emission display (100) includes the step of providing a first carbon nanotube (119) and a second carbon nanotube (118), which at least partially define an electron emitter (116). First carbon nantotube (119) is characterized by a first emission current capability and second carbon nanotube (118) is characterized by a second emission current capability, which is less than the first emission current capability. The method further includes the steps of causing first carbon nanotube (119) to be reduced in length at a first rate and, concurrently, causing second carbon nanotube (118) to be reduced in length at a second rate, which is less than the first rate and can be equal to zero, thereby reducing the difference between the second emission current capability and the first emission current capability and, thus, improving uniformity of emission current. The selective reductions in length are preferably achieved by performing the step of causing a burn-in current to be emitted by electron emitter (116).
摘要翻译：一种用于提高场发射显示器（100）的发射电流的均匀性的方法包括提供至少部分地限定电子发射器（116）的第一碳纳米管（119）和第二碳纳米管（118）的步骤。第一碳纳米管（119）的特征在于第一发射电流能力，第二碳纳米管（118）的特征在于第二发射电流能力小于第一发射电流能力。该方法还包括以第一速率使第一碳纳米管（119）的长度减小的步骤，并且同时使第二碳纳米管（118）的长度以第二速率减小，第二速率小于第一碳纳米管速率并且可以等于零，从而减少第二发射电流能力和第一发射电流能力之间的差异，从而改善发射电流的均匀性。优选地通过执行使电子发射器（116）发射老化电流的步骤来实现长度的选择性减小。

3. 发明授权

US6033924A Method for fabricating a field emission device 失效
标题翻译：场致发射器件的制造方法
公开(公告)号：US6033924A
公开(公告)日：2000-03-07
申请号：US900095
申请日：1997-07-25
申请人： Sung P. Pack , Babu R. Chalamala
发明人： Sung P. Pack , Babu R. Chalamala
IPC分类号： H01J9/02 , H01L21/00
CPC分类号： H01J9/025
摘要： A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), forming within the emitter well (115) an electron emitter structure (118) having a surface (123), forming on a portion of the dielectric layer (114) a gate electrode (116), depositing on the dielectric layer (114) a sacrificial layer (210), thereafter depositing on the surface (123) of the electron emitter structure (118) a coating material (220, 320, 420) that has an emission-enhancing material, and then removing the sacrificial layer (210).
摘要翻译：一种用于制造场发射器件（200）的方法包括以下步骤：在衬底（110）的表面上形成阴极（112），在阴极（112）上形成电介质层（114），形成发射极（在电介质层（114）中，在发射极（115）内形成具有表面（123）的电子发射体结构（118），在电介质层（114）的一部分上形成栅极（116），在电介质层（114）上沉积牺牲层（210），然后在电子发射体结构（118）的表面（123）上沉积具有发射增强材料的涂层材料（220,320,420），以及然后去除牺牲层（210）。

4. 发明授权

US06459198B1 Seal and method of sealing devices such as displays 失效
标题翻译：密封装置和显示器等密封装置的方法
公开(公告)号：US06459198B1
公开(公告)日：2002-10-01
申请号：US09572157
申请日：2000-05-17
申请人： Kenneth A. Dean , Babu R. Chalamala , Dave Uebelhoer , Craig Amrine
发明人： Kenneth A. Dean , Babu R. Chalamala , Dave Uebelhoer , Craig Amrine
IPC分类号： H01J926
CPC分类号： H01J9/261
摘要： A method of fabricating a high vacuum display with flat form factor, and the display, include an envelope with two major, parallel spaced apart glass sides and a continuous edge therebetween. An opening is formed through one of the glass sides of the envelope. A plate is provided with an area larger than the opening in the envelope. A button with an area slightly smaller than the opening may be formed on one side of the plate. A low temperature melting material is positioned on the plate around the button and the envelope is positioned in a substantial vacuum. The button is placed in the opening with the plate abutting the glass side outside of the envelope and the low temperature melting material is melted using heat and/or pressure to sealingly engage the button within the opening.
摘要翻译：一种制造具有扁平形状因子的高真空显示器的方法，并且显示器包括具有两个主要，平行间隔开的玻璃侧面和其间的连续边缘的封套。通过信封的玻璃侧之一形成开口。板的面积大于封套中的开口面积。具有稍小于开口面积的按钮可以形成在板的一侧上。低温熔融材料位于按钮周围的板上，并且将信封放置在基本真空中。按钮被放置在开口中，其中板抵靠在信封外面的玻璃侧，并且使用热和/或压力熔化低温熔化材料以密封地接合开口内的按钮。

5. 发明授权

US6091190A Field emission device 失效
标题翻译：场发射装置
公开(公告)号：US6091190A
公开(公告)日：2000-07-18
申请号：US901734
申请日：1997-07-28
申请人： Babu R. Chalamala , Sung P. Pack , Charles A. Rowell
发明人： Babu R. Chalamala , Sung P. Pack , Charles A. Rowell
IPC分类号： H01J1/304 , H01J1/30
CPC分类号： H01J1/3042 , H01J29/04 , H01J2201/30426
摘要： An electron emitter (121, 221, 321, 421) includes an electron emitter structure (118) having a passivation layer (120, 220, 320, 420) formed thereon. The passivation layer (120, 220, 320, 420) is made from an oxide selected from a group consisting of the oxides of Ba, Ca, Sr, In, Sc, Ti, Ir, Co, Sr, Y, Zr, Ru, Pd, Sn, Lu, Hf, Re, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Th, and combinations thereof. In the preferred embodiment, the electron emitter structure (118) is made from molybdenum, and the passivation layer (120, 220, 320, 420) is made from an emission-enhancing oxide having a work function that is less than the work function of the molybdenum.
摘要翻译：电子发射器（121,221,321,421）包括具有形成在其上的钝化层（120,220,320,420）的电子发射体结构（118）。钝化层（120,220,320,420）由选自由Ba，Ca，Sr，In，Sc，Ti，Ir，Co，Sr，Y，Zr，Ru， Pd，Sn，Lu，Hf，Re，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Th及其组合。在优选实施例中，电子发射器结构（118）由钼制成，并且钝化层（120,220,320,420）由具有小于功函数的功函数的发光增强氧化物制成钼。

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