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    • 5. 发明专利
    • MULTILAYER MAGNETORESISTIVE SENSOR/BRIDGE CIRCUIT ARRANGEMENT
    • GB2356059A
    • 2001-05-09
    • GB0025192
    • 2000-10-13
    • BOSCH GMBH ROBERT
    • HAAS GUNTHERFREITAG MARTINJOHNSON ANDREW
    • G01R33/09
    • A magnetically sensitive component (30), in particular a sensor element, with at least two magnetoresistive layer systems (20) produced in regions on a substrate (10), is proposed. Here each of the layer systems (20) has at least one reference layer (2, 2'), at least one intermediate layer (3) adjacent to the reference layer (2, 2') and at least one detection layer (1) adjacent to the intermediate layer (3), and are connected as bridge resistors (R 2 , R 4 ) in an electrical circuit in the form of a Wheatstone bridge (21). Moreover, at least one of the reference layers (2, 2') has at least one magnetoresistive layer system (20), at least one first partial layer (2a, 2a') and at least one second partial layer (2b, 2b'), wherein the first partial layer (2a, 2a') exhibits a magnetisation (m 2 ) and the second partial layer is an antiferromagnetic partial layer (2b, 2b'). The magnetically sensitive component (30) is especially suitable for contactless and largely temperature-independent and offset-free recording of speeds and angles based on the GMR or TMR effect. In this connection it can also be used in the presence of strong external magnetic fields.
    • 7. 发明专利
    • DE10117355A1
    • 2002-10-17
    • DE10117355
    • 2001-04-07
    • BOSCH GMBH ROBERT
    • HAAS GUNTHERMOERSCH GILBERTJOHNSON ANDREW
    • G01R33/09H01F41/30H01L43/08G11B5/716H01F13/00
    • Disclosed is a method for adjusting magnetization, especially local modifications, in the resulting magnification (m2) in a layered arrangement (2) with a ferromagnetic layer (2a) and an adjacent antiferromagnetic layer (2b). The antiferromagnetic layer (2b) is initially heated, at least partially, to above a threshold temperature (Tb), especially with the aid of a laser. Above said temperature, the influence of said area on the resulting direction of magnetization (m2) of the adjacent area (5, 6, 8, 9) of the ferromagnetic layer (2a) disappears substantially. At least the area (5,6,8,9) of the ferromagnetic layer (2a) adjacent to the heated area of the antimagnetic layer (2b) is exposed to an external magnetic field (H) of a given direction and the antiferromagnetic layer (2b) is finally cooled to below the threshold temperature (Tb). The inventive method is particularly suitable for production of a magnetoresistive layered system working according to the spin-valve principle with partially different directions of magnetization (m2) which are connected in the form of Wheatstone bridges.