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1. 发明专利

AU751935B2 An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production 未知
公开(公告)号：AU751935B2
公开(公告)日：2002-08-29
申请号：AU4295999
申请日：1999-06-18
申请人： JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK
发明人： JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK , GUNDLACH DAVID J
IPC分类号： H01L27/092 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L27/28 , H01L29/786 , H01L51/05 , H01L51/30
摘要： An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor.

2. 发明专利

CA2334862C AN INTEGRATED INORGANIC/ORGANIC COMPLEMENTARY THIN-FILM TRANSISTOR CIRCUIT AND A METHOD FOR ITS PRODUCTION 未知
公开(公告)号：CA2334862C
公开(公告)日：2006-06-13
申请号：CA2334862
申请日：1999-06-18
申请人： GUNDLACH DAVID J , JACKSON THOMAS , HAGEN KLAUK , BONSE MATHIAS , THOMASSON DANIEL B
发明人： GUNDLACH DAVID J , JACKSON THOMAS , HAGEN KLAUK , BONSE MATHIAS , THOMASSON DANIEL B
IPC分类号： H01L27/092 , H01L51/00 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L27/28 , H01L29/786 , H01L51/05 , H01L51/30 , H01L51/40
摘要： An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channeltransistor. In a more specific method for fabricating a complementary transistor circuit the inorganic active semiconductor is deposited in the form of hydrogenated amorphous silicon and an n+ doped layer of a silicon material is deposited as respectively source and drain areas in the organic transisto r. A layer of pentacene is deposited over an isolated layer which is patterned such that the pentacene which forms the active semiconductor in the organic thin-film transistor is isolated electrically from the inorganic thin-film transistor.

3. 发明专利

NO321391B1 未知
公开(公告)号：NO321391B1
公开(公告)日：2006-05-08
申请号：NO993037
申请日：1999-06-18
申请人： JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , GUNDLACH DAVID J , HAGEN KLAUK
发明人： JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK , GUNDLACH DAVID J
IPC分类号： H01L21/336 , H01L20060101 , H01L49/02 , H01L51/05 , H01L51/30

4. 发明专利

AU4295999A Integrated inorganic/organic complementary thin-film transistor circuit 未知
公开(公告)号：AU4295999A
公开(公告)日：2000-01-05
申请号：AU4295999
申请日：1999-06-18
申请人： BONSE MATHIAS , HAGEN KLAUK , JACKSON THOMAS , THOMASSON DANIEL B
发明人： JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK , GUNDLACH DAVID J
IPC分类号： H01L27/092 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L27/28 , H01L29/786 , H01L51/05 , H01L51/30
摘要： An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor.

5. 发明申请

WO9966540A9 AN INTEGRATED INORGANIC/ORGANIC COMPLEMENTARY THIN-FILM TRANSISTOR CIRCUIT AND A METHOD FOR ITS PRODUCTION 审中-公开
标题翻译：一种集成的无机/有机互补薄膜晶体管电路及其生产方法
公开(公告)号：WO9966540A9
公开(公告)日：2000-05-04
申请号：PCT/NO9900208
申请日：1999-06-18
申请人： THIN FILM ELECTRONICS ASA , JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK , GUNDLACH DAVID J
发明人： JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK , GUNDLACH DAVID J
IPC分类号： H01L27/092 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L27/28 , H01L29/786 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L27/286 , H01L27/1214 , H01L27/283 , H01L29/66765 , H01L29/78669 , H01L29/78684 , H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0545
摘要： An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor.
摘要翻译：集成的有机/无机互补薄膜晶体管电路包括可操作地连接在公共衬底上的第一和第二晶体管，其中第一晶体管是无机薄膜晶体管并且第二有机薄膜晶体管。无机薄膜晶体管是n沟道晶体管，有机薄膜晶体管是p沟道晶体管，反之亦然。每个晶体管具有单独的栅电极，并且有机半导体材料在与无机薄膜晶体管电隔离的有机薄膜晶体管中的p沟道半导体的情况下。在用于制造这种类型的晶体管电路的第一种方法中，为公共衬底上的每个晶体管沉积单独的栅电极，用于有机薄膜晶体管的源电极和漏电极的材料被沉积在有机薄膜晶体管的薄膜结构以及有机p沟道晶体管中的有机有源半导体材料分别与无机n沟道晶体管电隔离，沟道晶体管可选地与无机p沟道晶体管电隔离。

6. 发明申请

WO9966540A2 INTEGRATED INORGANIC/ORGANIC COMPLEMENTARY THIN-FILM TRANSISTOR CIRCUIT 审中-公开
标题翻译：集成无机/有机补充薄膜晶体管电路
公开(公告)号：WO9966540A2
公开(公告)日：1999-12-23
申请号：PCT/NO9900208
申请日：1999-06-18
申请人： OPTICOM AS , JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK , GUNDLACH DAVID J
发明人： JACKSON THOMAS , BONSE MATHIAS , THOMASSON DANIEL B , HAGEN KLAUK , GUNDLACH DAVID J
IPC分类号： H01L27/092 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L27/28 , H01L29/786 , H01L51/05 , H01L51/30 , H01L
CPC分类号： H01L27/286 , H01L27/1214 , H01L27/283 , H01L29/66765 , H01L29/78669 , H01L29/78684 , H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0545
摘要： An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor. In a more specific method for fabricating a complementary transistor circuit the inorganic active semiconductor is deposited in the form of hydrogenated amorphous silicon and an n doped layer of a silicon material is deposited as respectively source and drain areas in the organic transistor. A layer of pentacene is deposited over an isolated layer which is patterned such that the pentacene which forms the active semiconductor in the organic thin-film transistor is isolated electrically from the inorganic thin-film transistor.
摘要翻译：一种集成有机/无机互补薄膜晶体管电路，包括可操作地连接在公共衬底上的第一和第二晶体管，其中第一晶体管是无机薄膜晶体管，第二晶体管是有机薄膜晶体管。无机薄膜晶体管是n沟道晶体管，有机薄膜晶体管是p沟道晶体管，反之亦然。每个晶体管具有单独的栅电极，并且在与无机薄膜晶体管电隔离的有机薄膜晶体管中的p沟道半导体的情况下，有机有源半导体材料。在制造这种晶体管电路的第一种方法中，在公共衬底上为每个晶体管沉积单独的栅电极，有机薄膜晶体管的源极和漏极的材料沉积在相同的层级上有机薄膜晶体管的薄膜结构，并且在每种情况下，有机p沟道晶体管中的有机活性半导体材料与无机n沟道晶体管电隔离，并且有机半导体材料中的有机半导体材料，可选地与无机p沟道晶体管电隔离。在制造互补晶体管电路的更具体的方法中，以氢化非晶硅的形式沉积无机活性半导体，并且在有机晶体管中沉积作为分别的源极和漏极区域的硅材料的n +掺杂层。在分离层上沉积并五苯层，其被图案化，使得在有机薄膜晶体管中形成有源半导体的并五苯与无机薄膜晶体管电隔离。

7. 发明专利

NO985729D0 未知
公开(公告)号：NO985729D0
公开(公告)日：1998-12-08
申请号：NO985729
申请日：1998-12-08
申请人： BONSE MATHIAS , JACKSON THOMAS , THOMASSON DANIEL B , KLAUK HAGEN , GUNDLACH DAVID J
发明人： BONSE MATHIAS , JACKSON THOMAS , THOMASSON DANIEL B , KLAUK HAGEN , GUNDLACH DAVID J
IPC分类号： H01L20060101 , H01L

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