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1. 发明授权

US10466820B2 OLED array substrate, manufacturing method thereof and touch display device 有权
公开(公告)号：US10466820B2
公开(公告)日：2019-11-05
申请号：US15524244
申请日：2015-12-11
申请人： BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Wenlong Wang , Yinhu Huang , Zhiyuan Lin , Ling Han , Jun Ma , Liang Lin
IPC分类号： G06F3/041 , H01L21/77 , G09G3/3225 , H01L27/32 , H01L51/52 , H01L51/56 , G06F3/044 , H01L27/12
摘要： The embodiments of the present invention provide an OLED array substrate, a method for manufacturing the OLED array substrate, and a touch display device. The OLED array substrate includes a first metal layer pattern, a transparent conductive layer pattern, an insulating layer pattern disposed between the first metal layer pattern and the transparent conductive layer pattern. The first metal layer pattern includes a metal bridge line. The transparent conductive layer pattern includes an anode of an OLED, a plurality of first electrodes extending in a first direction and a plurality of second electrodes extending in a second direction. Each of the first electrodes includes a plurality of first sub-electrodes, and each of the first sub-electrodes is electrically connected to a corresponding metal bridge line.

2. 发明授权

US10134770B2 Preparation method of conductive via hole structure, array substrate and display device 有权
公开(公告)号：US10134770B2
公开(公告)日：2018-11-20
申请号：US15114219
申请日：2016-01-21
申请人： BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Zhiyuan Lin , Yinhu Huang , Zhixiang Zou , Binbin Cao
IPC分类号： H01L27/12 , H01L21/77 , G02F1/1333 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/308 , H01L21/768 , H01L29/45 , H01L29/49 , G02F1/136
摘要： A preparation method of a conductive via hole structure, a preparation method of an array substrate and a preparation method of a display device, the preparation method of the array substrate includes: forming a first metal layer (01) including the first metal structure (01a), forming a non-metallic film including a first part corresponding to the first metal structure (01a) and an organic insulating film (40′) in sequence; patterning the organic insulating film (40′) to form a first organic insulating layer via hole (41) corresponding to the first part; then baking to form an organic insulating layer (40); and then, removing the first part of the non-metallic film to form a non-metallic layer and expose the part of the surface (011) of the first metal structure (01a). This method can avoid the metal structure from being seriously oxidized.

3. 发明授权

US09716113B2 Conductive structure and method of manufacturing the same, array substrate 有权
公开(公告)号：US09716113B2
公开(公告)日：2017-07-25
申请号：US14744308
申请日：2015-06-19
申请人： BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
发明人： Binbin Cao , Zhiyuan Lin
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1262 , H01L29/45 , H01L29/458 , H01L29/4908
摘要： The present invention discloses a conductive structure, a method of manufacturing the conductive structure, and an array substrate. The method of manufacturing the conductive structure, comprising steps of: Forming a barrier metal film and a copper metal film in this order on a substrate, wherein the copper metal film being laminated on the barrier metal film; forming a preset photoresist pattern on the copper metal film; etching the barrier metal film and the copper metal film; oxidizing an exposed sidewall of the etched barrier metal film and an exposed sidewall of the etched copper metal film, so as to generate metal oxide layers on the exposed sidewall of the etched barrier metal film and the exposed sidewall of the etched copper metal film, respectively; and stripping off the photoresist pattern by means of a photoresist stripping liquid. In the method of manufacturing the conductive structure according to embodiments of the present invention, the exposed sidewall of the conductive structure is oxidized to generate a uniform metal oxidization layer on the exposed sidewall before removing the photoresist from the conductive structure by a wet stripping process. In this way, it can effectively prevent the interfaces between the copper metal film and the barrier metal film from being separated during performing the wet stripping process.

4. 发明授权

US10506720B2 Carrying device, wet etching apparatus and usage method thereof 有权
公开(公告)号：US10506720B2
公开(公告)日：2019-12-10
申请号：US15105507
申请日：2016-01-21
申请人： BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Zhiyuan Lin , Yinhu Huang
IPC分类号： H01L21/67 , H05K3/06 , H05K3/00
CPC分类号： H05K3/068 , H01L21/6708 , H01L21/67103 , H05K3/002 , H05K3/0085 , H05K3/067 , H05K2203/10 , H05K2203/1105
摘要： The present invention discloses a carrying device, a wet etching apparatus and a usage method thereof. The carrying device comprises a carrying body and a heating unit both disposed under a to-be-processed substrate, the carrying body is used for carrying the to-be-processed substrate such that the to-be-processed substrate is placed inclined; the heating unit is used for heating the to-be-processed substrate, such that temperature of the to-be-processed substrate rises gradually from a top portion to a bottom portion thereof. In the technical solution of the present invention, by disposing the heating unit under the to-be-processed substrate, the temperature of the to-be-processed substrate rises gradually from the top portion to the bottom portion thereof, thus etch rate of the etchant on the bottom portion of the to-be-processed substrate can be increased, and uniformity of etch rate in the inclined wet etching process is improved.

5. 发明申请

US20160276369A1 CONDUCTIVE STRUCTURE AND METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE 有权
标题翻译：导电结构及其制造方法，阵列基板
公开(公告)号：US20160276369A1
公开(公告)日：2016-09-22
申请号：US14744308
申请日：2015-06-19
申请人： BOE Technology Group Co., Ltd. , Hefei Xinsheng Optoelectronics Technology Co., Ltd.
发明人： Binbin Cao , Zhiyuan Lin
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1262 , H01L29/45 , H01L29/458 , H01L29/4908
摘要： The present invention discloses a conductive structure, a method of manufacturing the conductive structure, and an array substrate. The method of manufacturing the conductive structure, comprising steps of: Forming a barrier metal film and a copper metal film in this order on a substrate, wherein the copper metal film being laminated on the barrier metal film; forming a preset photoresist pattern on the copper metal film; etching the barrier metal film and the copper metal film; oxidizing an exposed sidewall of the etched barrier metal film and an exposed sidewall of the etched copper metal film, so as to generate metal oxide layers on the exposed sidewall of the etched barrier metal film and the exposed sidewall of the etched copper metal film, respectively; and stripping off the photoresist pattern by means of a photoresist stripping liquid. In the method of manufacturing the conductive structure according to embodiments of the present invention, the exposed sidewall of the conductive structure is oxidized to generate a uniform metal oxidization layer on the exposed sidewall before removing the photoresist from the conductive structure by a wet stripping process. In this way, it can effectively prevent the interfaces between the copper metal film and the barrier metal film from being separated during performing the wet stripping process.
摘要翻译：本发明公开了导电结构体，导电结构体的制造方法以及阵列基板。制造导电结构体的方法包括以下步骤：在衬底上依次形成阻挡金属膜和铜金属膜，其中所述铜金属膜层压在所述阻挡金属膜上; 在铜金属膜上形成预设的光刻胶图案; 蚀刻阻挡金属膜和铜金属膜; 氧化蚀刻的阻挡金属膜的暴露的侧壁和蚀刻的铜金属膜的暴露的侧壁，以分别在蚀刻的阻挡金属膜的暴露的侧壁和蚀刻的铜金属膜的暴露的侧壁上分别产生金属氧化物层 ; 并通过光致抗蚀剂剥离液体剥离光刻胶图案。在根据本发明的实施例的制造导电结构的方法中，通过湿剥离工艺从导电结构去除光致抗蚀剂之前，将导电结构的暴露的侧壁氧化，以在暴露的侧壁上产生均匀的金属氧化层。以这种方式，可以有效地防止在执行湿剥离工艺期间铜金属膜与阻挡金属膜之间的界面分离。

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