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    • 2. 发明申请
    • ARRAY SUBSTRATE, PREPARATION METHOD THEREOF AND DISPLAY DEVICE
    • 阵列基板,其制备方法和显示装置
    • US20160380005A1
    • 2016-12-29
    • US15098914
    • 2016-04-14
    • BOE TECHNOLOGY GROUP CO., LTD.BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    • Xuecheng HOUKai LUJian GUO
    • H01L27/12
    • H01L27/1248H01L27/124H01L27/1244H01L27/1259
    • The present invention provides an array substrate, a preparation method thereof and a display device. The array substrate includes at least one thin film transistor and a resin layer having at least one resin via hole, wherein a film-thickness-difference-adjusting layer used for reducing the film thickness difference at the resin via hole is arranged at the lower part of the resin layer in at least a part of the resin via hole. By providing the film-thickness-difference-adjusting layer, the film thickness difference at the resin via hole can be effectively reduced, and when a photolithographic process is performed, the difference of the thickness of the photoresist here and the thicknesses at other positions is reduced, so that the via hole fluctuation of a passivation layer caused by the larger film thickness difference at the resin via hole is improved, and the metal residue problem of the pixel electrodes is effectively avoided.
    • 本发明提供阵列基板,其制备方法和显示装置。 阵列基板包括至少一个薄膜晶体管和具有至少一个树脂通孔的树脂层,其中用于降低树脂通孔的膜厚差的膜厚度差调节层设置在下部 在树脂通孔的至少一部分中的树脂层。 通过设置薄膜厚度差调节层,可以有效地降低树脂通孔的膜厚差,当进行光刻处理时,这里的光致抗蚀剂的厚度差和其他位置的厚度之差为 从而提高了由树脂通孔中较大的膜厚度差引起的钝化层的通孔波动,有效地避免了像素电极的金属残留问题。