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1. 发明申请

US20150276999A1 COLOR FILTER SUBSTRATE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING A COLOR FILTER SUBSTRATE 有权
标题翻译：彩色滤光片基板，显示装置及制造彩色滤光片基板的方法
公开(公告)号：US20150276999A1
公开(公告)日：2015-10-01
申请号：US14488075
申请日：2014-09-16
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jing LI , Changjiang YAN , Wenyu ZHANG
IPC分类号： G02B5/20 , G03F7/00
CPC分类号： G02B5/201 , G02B26/026
摘要： The present invention relates to the field of displays and discloses a color filter substrate, a display device and a method for manufacturing a color filter substrate. The color filter substrate comprises: a transparent substrate; a light-electricity converting module, provided on the transparent substrate and configured to convert a light beam incident from the transparent substrate into electric energy. The display device comprises the color filter substrate. In the invention, a light-electricity converting module is set on a transparent substrate, thus a light beam incident from the transparent substrate may be converted into electric energy, so that the sunlight transmitted into a display panel may be transformed into electric energy; because the solar energy is abundant, it may meet the demand of the display panel, and the service time of the display panel may be prolonged.
摘要翻译：显示器技术领域本发明涉及显示器领域，并公开了一种滤色器基板，显示装置及其制造方法。滤色器基板包括：透明基板; 光电转换模块，设置在所述透明基板上并且被配置为将从所述透明基板入射的光束转换为电能。显示装置包括滤色器基板。在本发明中，将光电转换模块设置在透明基板上，从而可以将从透明基板入射的光束转换成电能，从而将透射到显示面板的太阳光转换为电能; 因为太阳能充足，所以可以满足显示面板的需要，可延长显示面板的使用时间。

2. 发明申请

US20160033819A1 ARRAY SUBSTRATE AND TRANSFLECTIVE LIQUID CRYSTAL DISPLAY PANEL 有权
标题翻译：阵列基板和透射液晶显示面板
公开(公告)号：US20160033819A1
公开(公告)日：2016-02-04
申请号：US14355273
申请日：2013-12-03
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jing LI , Zhenyu XIE , Xu CHEN , Da XU
IPC分类号： G02F1/1335 , G02F1/1343 , G02F1/1334 , G02F1/1368 , G02F1/1362
CPC分类号： G02F1/133555 , G02F1/1334 , G02F1/133553 , G02F1/13439 , G02F1/1362 , G02F1/136286 , G02F1/1368
摘要： An array substrate and a transflective liquid crystal display panel. The array substrate includes: a plurality of sub-pixel areas defined by gate lines and data lines distributed across each other, each of the sub-pixel areas comprising a transmission area and a reflection area, wherein, the array substrate further comprises an adjustment module; the adjustment module is configured to transmit an adjustment signal to the reflection area and adjust the reflection area from opaque state to transparent state upon an external light intensity being smaller than a preset light intensity.
摘要翻译：阵列基板和透反射液晶显示面板。阵列基板包括：由彼此分布的栅极线和数据线限定的多个子像素区域，每个子像素区域包括透射区域和反射区域，其中阵列基板还包括调整模块 ; 调整模块被配置为在外部光强度小于预设光强度时将调整信号发送到反射区域并将反射区域从不透明状态调整到透明状态。

3. 发明申请

US20200081139A1 DETECTION PANEL, MANUFACTURING METHOD THEREOF AND DETECTION DEVICE 审中-公开
公开(公告)号：US20200081139A1
公开(公告)日：2020-03-12
申请号：US16398935
申请日：2019-04-30
申请人： Beijing BOE Optoelectronics Technology Co., Ltd. , BOE Technology Group Co., Ltd.
发明人： Jing LI , Wenyu ZHANG , Liangjie LI , Hao DONG , Da XU
IPC分类号： G01T1/20 , G02F1/167 , G02F1/16757 , G02F1/1368 , G02F1/1685 , G02F1/16766
摘要： The present disclosure relates to a detection panel, a manufacturing method thereof and a detection device. The detection panel comprises: a base substrate and a photoelectric conversion structure located on the base substrate, and a display structure located on a side of the photoelectric conversion structure facing away from the base substrate and electrically connected to the photoelectric conversion structure; wherein the photoelectric conversion structure is configured to convert an optical signal into an electrical signal, and the display structure is configured to perform image display according to the electrical signal.

4. 发明申请

US20180137814A1 PIXEL DRIVING CIRCUIT, DISPLAY SUBSTRATE AND DRIVING METHOD THEREOF, AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20180137814A1
公开(公告)日：2018-05-17
申请号：US15118389
申请日：2015-12-21
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Shengji YANG , Xue DONG , Haisheng WANG , Xiaochuan CHEN , Yingming LIU , Weijie ZHAO , Rui XU , Chen MENG , Jing XUE , Ruijun DONG , Jing LI
IPC分类号： G09G3/3233 , G06F3/041
CPC分类号： G09G3/3233 , G06F3/0418 , G09G3/32 , G09G2300/0842 , G09G2320/0233 , G09G2354/00
摘要： The present disclosure provides a pixel driving circuit, a display substrate and a driving method thereof, and a display device. The pixel driving circuit includes a driving unit, a data voltage write unit, an energy storage unit, a threshold compensation unit, and a touch driving compensation unit. The energy storage unit comprises a first energy storage end and a second energy storage end. The touch driving compensation unit is connected to the second energy storage end of the energy storage unit to compensate the voltage of the second energy storage end in a touch phase, so as to maintain that driving current generated by the driving unit does not vary with time. The pixel driving circuit provided by the present disclosure can allow luminance of a driven electroluminescent element does not vary with time in a touch phase, thereby avoiding affecting light emission display of the driven electroluminescent element.

5. 发明申请

US20160225914A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE 有权
标题翻译：薄膜晶体管，其制造方法和阵列基板
公开(公告)号：US20160225914A1
公开(公告)日：2016-08-04
申请号：US14388634
申请日：2013-12-04
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Wenyu ZHANG , Zongmin TIAN , Jing LI
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/78696 , H01L27/1222 , H01L27/1225 , H01L27/1259 , H01L27/127 , H01L29/41733 , H01L29/66742 , H01L29/78618 , H01L29/78642 , H01L29/78663 , H01L29/78669 , H01L29/7869
摘要： A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.
摘要翻译：提供薄膜晶体管，其制造方法和阵列基板。薄膜晶体管包括设置在基底基板上的栅电极，栅绝缘层，有源层，源电极和漏电极，并且沿着与基底基板垂直的方向，源电极和漏电极分别设置在有源层的相对两侧，源电极和漏电极接触有源层。

6. 发明申请

US20160247840A1 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE 有权
标题翻译：阵列基板及其制造方法，显示装置
公开(公告)号：US20160247840A1
公开(公告)日：2016-08-25
申请号：US14386209
申请日：2013-12-03
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jing LI , Wenyu ZHANG , Jiaxiang ZHANG
IPC分类号： H01L27/12 , H01L23/50
CPC分类号： H01L27/124 , G02F1/136286 , G02F2201/40 , H01L23/50 , H01L27/1222 , H01L27/1288 , H01L29/41733 , H01L29/41741 , H01L29/41775 , H01L29/78642
摘要： An array substrate and a display device are presented. The array substrate includes: a base substrate and a plurality of thin film transistor units located on the base substrate, wherein, the thin film transistor unit includes: a first gate electrode located on the base substrate, a gate insulating layer located on the first gate electrode, a drain electrode disposed in the same layer as the first gate electrode, an active layer located on the drain electrode, a source electrode located on the active layer, a first transparent conductive layer is provided between the base substrate and the first gate electrode and the drain electrode that are disposed in the same layer, and the gate insulating layer is also disposed between the first gate electrode plus the first transparent conductive layer beneath it and the drain electrode plus the first transparent conductive layer beneath it.
摘要翻译：呈现阵列基板和显示装置。阵列基板包括：基底基板和位于基底基板上的多个薄膜晶体管单元，其中，薄膜晶体管单元包括：位于基底基板上的第一栅电极，位于第一栅极上的栅极绝缘层电极，设置在与第一栅电极相同的层中的漏电极，位于漏电极上的有源层，位于有源层上的源电极，第一透明导电层设置在基底基板和第一栅电极之间和漏电极，并且栅绝缘层也设置在第一栅电极与其下的第一透明导电层之间，漏电极加上其下的第一透明导电层。

7. 发明申请

US20160247821A1 ARRAY SUBSTRATE AND ITS MANUFACTURING METHOD, DISPLAY DEVICE 有权
标题翻译：阵列基板及其制造方法，显示装置
公开(公告)号：US20160247821A1
公开(公告)日：2016-08-25
申请号：US14388182
申请日：2013-10-31
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jing LI , Fang LIU
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , H01L27/1222 , H01L27/1288 , H01L29/78642
摘要： An array substrate including: a base substrate and a thin film transistor unit provided on the base substrate; the thin film transistor unit comprises: a first gate electrode provided on the base substrate, a gate insulating layer provided on the first gate electrode, a source electrode disposed in a same layer as the first gate electrode, an active layer provided on the source electrode, a drain electrode provided on the active layer, and the gate insulating layer disposed between the first gate electrode and the source electrode. This array substrate reduces a channel length of a conducting channel of the thin film transistor unit, and meanwhile increases an aperture ratio of a pixel.
摘要翻译：一种阵列基板，包括：基底基板和设置在基底基板上的薄膜晶体管单元; 所述薄膜晶体管单元包括：设置在所述基底基板上的第一栅极电极，设置在所述第一栅电极上的栅极绝缘层，与所述第一栅电极设置在同一层中的源电极，设置在所述源极上的有源层设置在有源层上的漏电极，以及设置在第一栅电极和源电极之间的栅极绝缘层。该阵列基板减小了薄膜晶体管单元的导电沟道的沟道长度，同时增加了像素的开口率。

8. 发明申请

US20170287950A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20170287950A1
公开(公告)日：2017-10-05
申请号：US15625436
申请日：2017-06-16
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Zhenyu XIE , Shaoying XU , Tiansheng LI , Changjiang YAN , Jing LI , Zongmin TIAN
IPC分类号： H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1248 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer.

9. 发明申请

US20160372489A1 Display Panel and Method of Fabricating the Same, and Display Device 有权
标题翻译：显示面板及其制作方法及显示装置
公开(公告)号：US20160372489A1
公开(公告)日：2016-12-22
申请号：US14905380
申请日：2015-08-18
申请人： BOE Technology Group Co., Ltd. , Beijing BOE Optoelectronics Technology Co., Ltd.
发明人： Jing LI , Yulin CUI
IPC分类号： H01L27/12 , H01L25/00 , H01L21/768 , H01L25/065 , H01L21/02
CPC分类号： H01L27/124 , H01L21/02271 , H01L21/76802 , H01L21/76804 , H01L21/76816 , H01L25/0655 , H01L25/50 , H01L27/1259
摘要： The present invention provides a display panel, a fabricating method thereof and a display device. The display panel comprises a pixel region and a fan-out region, first signal lines and second signal lines are provided to intersect each other in the pixel region, and extend into the fan-out region, respectively, a first insulation layer is provided between the first signal lines and the second signal lines, a second insulation layer is provided on the second signal lines, the second insulation layer comprises at least four layers of structures, and a density of each layer of structure of the second insulation layer decreases gradually along a direction away from the first insulation layer. A size of the via hole formed in the second insulation layer by etching is smaller than that of the via hole formed in the prior art.
摘要翻译：本发明提供一种显示面板及其制造方法以及显示装置。显示面板包括像素区域和扇出区域，第一信号线和第二信号线被设置为在像素区域中彼此相交并分别延伸到扇出区域中，第一绝缘层设置在第一信号线和第二信号线，第二绝缘层设置在第二信号线上，第二绝缘层包括至少四层结构，并且第二绝缘层的每层结构的密度逐渐降低远离第一绝缘层的方向。通过蚀刻形成在第二绝缘层中的通孔的尺寸小于现有技术中形成的通孔的尺寸。

10. 发明申请

US20160035901A1 FABRICATING METHOD OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND DISPLAY PANEL 有权
标题翻译：薄膜晶体管，薄膜晶体管和显示面板的制作方法
公开(公告)号：US20160035901A1
公开(公告)日：2016-02-04
申请号：US14421931
申请日：2014-04-25
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jing LI , Zhenyu XIE , Xu CHEN , Wenyu ZHANG , Da XU
IPC分类号： H01L29/786 , H01L29/66 , H01L21/311 , H01L21/02
CPC分类号： H01L29/78675 , H01L21/0217 , H01L21/02532 , H01L21/02592 , H01L21/02672 , H01L21/31111 , H01L27/1281 , H01L29/66757 , H01L29/78603
摘要： Embodiments of the invention provide a fabricating method a thin film transistor, a thin film transistor and a display panel, so as to improve carrier mobility in the polycrystalline silicon. The fabricating method a thin film transistor comprises following M1, depositing an inducing layer on a substrate; M2, etching a recess in the inducing layer by an etching process, the recess having an edge with a prescribed shape; M3, depositing an amorphous silicon layer in the recess having an edge with a prescribed shape, and inducing the amorphous silicon layer to form a polycrystalline silicon layer by crystallization method, polycrystalline silicon grains in the polycrystalline silicon layer arranging in a direction vertical to the edge of the recess by the limitation of the edge of the recess, and the polycrystalline silicone layer and the inducing layer together forming a semiconductor layer; and M4, forming a gate insulating layer, a gate, a passivation layer and a source and a drain connecting with the semiconductor layer sequentially on the semiconductor layer.
摘要翻译：本发明的实施例提供薄膜晶体管，薄膜晶体管和显示面板的制造方法，以便提高多晶硅中的载流子迁移率。制造方法薄膜晶体管包括以下M1，在衬底上沉积诱导层; M2，通过蚀刻处理蚀刻诱导层中的凹部，凹部具有规定形状的边缘; M3，在具有规定形状的边缘的凹部中沉积非晶硅层，并且通过结晶法诱导非晶硅层形成多晶硅层，多晶硅层中的多晶硅晶粒沿垂直于边缘的方向排列通过限制凹部的边缘，并且多晶硅层和诱导层一起形成半导体层; 和M4，在半导体层上依次形成栅极绝缘层，栅极，钝化层以及与半导体层连接的源极和漏极。

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