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1. 发明公开

US20240234532A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE 审中-公开
公开(公告)号：US20240234532A1
公开(公告)日：2024-07-11
申请号：US17925222
申请日：2021-12-27
申请人： BOE Technology Group Co., Ltd.
发明人： Hehe HU , Dongfang WANG , Fengjuan LIU , Ce NING , Zhengliang LI , Jiayu HE , Yan QU , Kun ZHAO , Jie HUANG , Liping LEI , Yunsik IM , Shunhang ZHANG , Nianqi YAO , Feifei LI
IPC分类号： H01L29/43 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号： H01L29/435 , H01L27/1214 , H01L29/41733 , H01L29/66742
摘要： The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

2. 发明公开

US20240097042A1 OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20240097042A1
公开(公告)日：2024-03-21
申请号：US17781773
申请日：2021-06-25
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Lizhong WANG , Guangcai YUAN , Ce NING , Nianqi YAO , Hehe HU , Liping LEI , Dongfang WANG , Dapeng XUE , Shuilang DONG , Zhengliang LI
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66742
摘要： At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

3. 发明申请

US20230036385A1 THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL 有权
公开(公告)号：US20230036385A1
公开(公告)日：2023-02-02
申请号：US17772689
申请日：2021-06-24
申请人： BOE Technology Group Co., Ltd.
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Xue LIU , Zhi WANG , Feng GUAN
IPC分类号： H01L29/786 , H01L29/06 , H01L29/66
摘要： The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

4. 发明申请

US20220126294A1 BIOCHIP AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220126294A1
公开(公告)日：2022-04-28
申请号：US17432580
申请日：2021-01-22
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Xiaochen MA , Ce NING , Guangcai YUAN , Xin GU , Zhengliang LI
IPC分类号： B01L3/00 , C23C14/34 , C23C14/04
摘要： A biochip and a method for manufacturing the same are provided. The biochip includes: a guide layer; a channel layer on the guide layer, wherein the channel layer has therein a plurality of first channels extending in a first direction; a plurality of second channels extending in a second direction, wherein each of the plurality of second channels is in communication with the plurality of first channels, the plurality of second channels are in a layer where the channel layer is located, or in a layer where the channel layer and the guide layer are located; an encapsulation cover plate on a side of the channel layer distal to the guide layer; and a driving unit configured to drive biomolecules to move.

5. 发明申请

US20210229088A1 MICROFLUIDIC CHANNEL AND PREPARATION METHOD AND OPERATION METHOD THEREOF 有权
公开(公告)号：US20210229088A1
公开(公告)日：2021-07-29
申请号：US16643464
申请日：2019-03-11
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Xiaochen MA , Guangcai YUAN , Ce NING , Zhengliang LI
IPC分类号： B01L3/00 , G01N35/10
摘要： A microfluidic channel and a preparation method and an operation method thereof. The microfluidic channel includes: a channel structure, including a channel for a liquid sample to flow through and a channel wall surrounding the channel. The channel wall includes an electrolyte layer made of an electrolyte material; and a control electrode layer, at a side of the electrolyte layer away from the channel. The control electrode layer overlaps with the electrolyte layer with respect to the channel.

6. 发明申请

US20190043673A1 USE OF METALLIC NANO-PARTICLES, DYE-SENSITIZED SOLAR CELL AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20190043673A1
公开(公告)日：2019-02-07
申请号：US16051550
申请日：2018-08-01
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Xuefei SUN , Zhengliang LI , Bin ZHANG
IPC分类号： H01G9/20 , H01G9/00
摘要： A use of metallic nano-particles, a dye-sensitized solar cell and a method for fabricating the same are disclosed. The dye-sensitized solar cell includes: an electrode; a semiconductor layer arranged on the electrode and comprising dye molecules; a metallic nano-particle layer arranged on a side of the semiconductor layer away from the electrode; and a counter electrode arranged on a side of the metallic nano-particle layer away from the semiconductor layer.

7. 发明申请

US20160351585A1 ARRAY SUBSTRATE AND DISPLAY DEVICE 审中-公开
标题翻译：阵列基板和显示设备
公开(公告)号：US20160351585A1
公开(公告)日：2016-12-01
申请号：US14895352
申请日：2015-05-15
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Zhanfeng CAO , Feng ZHANG , Qi YAO , Jincheng GAO , Bin ZHANG , Xiaolong HE , Zhengliang LI , Wei ZHANG
IPC分类号： H01L27/12 , G02F1/1345
CPC分类号： H01L27/124 , G02F1/1345 , G02F1/13452 , G02F1/13454 , G02F1/136204 , H01L27/12
摘要： An array substrate and a display device are provided. The array substrate comprises a plurality of signal lines (40), a plurality of connecting lines (50) and a driving module (60) in a peripheral region (1) outside a display region (2); the connecting lines (50) are configured for connecting the signal lines (40) and the driving module (60), to transmit signal from the signal lines (40) to the driving module (60), wherein, at least one of the connecting lines (50) and at least one of the signal lines (40) are designed to intersect with and insulated from each other in a first region (N). The at least one of the signal lines (40) includes, in a second region (O) other than the first region (N), a first electrode line layer (401) and a second electrode line layer (402), while, in the first region (N), includes the first electrode line layer (401) but does not include the second electrode line layer (402). The array substrate may prevent problems of electrostatic accumulation or short circuit from occurring between the connecting lines (50) and the second electrode line layer (402).
摘要翻译：提供阵列基板和显示装置。阵列基板包括在显示区域（2）外部的周边区域（1）中的多条信号线（40），多条连接线（50）和驱动模块（60）。连接线（50）被配置用于连接信号线（40）和驱动模块（60），以将信号从信号线（40）发送到驱动模块（60），其中至少一个连接线路（50）和信号线（40）中的至少一个被设计成在第一区域（N）中与彼此相交和绝缘。信号线（40）中的至少一个在除了第一区域（N）之外的第二区域（O）中包括第一电极线层（401）和第二电极线层（402），而在第一区域（N）包括第一电极线层（401），但不包括第二电极线层（402）。阵列基板可以防止在连接线（50）和第二电极线层（402）之间发生静电积聚或短路的问题。

8. 发明申请

US20160336373A1 X-RAY FLAT PANEL DETECTOR AND X-RAY DIGITAL RADIOGRAPHY SYSTEM 有权
标题翻译： X射线平板检测器和X射线数字放射系统
公开(公告)号：US20160336373A1
公开(公告)日：2016-11-17
申请号：US15088177
申请日：2016-04-01
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jincheng GAO , Zhanfeng CAO , Xiangchun KONG , Qi YAO , Zhengliang LI , Bin Zhang , Xiaolong HE
IPC分类号： H01L27/146 , G01T1/24 , G01T1/20
CPC分类号： H01L27/14663 , G01T1/2018 , G01T1/241 , H01L27/14612
摘要： The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode. As a result, it is improved the quantum detection efficiency and the sensitivity of the X-ray flat panel detector.
摘要翻译：本公开提供了一种X射线平板检测器，包括：基底; 设置在基底基板上的薄膜晶体管（TFT），像素电极层，光电二极管，透明电极层和X射线转换层; 以及电场施加部，被配置为产生电场，其中所述光电二极管被布置在电场中，并且当可见光被所述光电二极管转换为电信号时，所述负电荷的移动方向基本上与所述电场的方向相同电场。在该检测器中，施加与光电二极管中的负电荷的移动方向基本相同的电场的方向，从而可以在电场的影响下加速光电二极管的空穴和电子的移动，并且因此电信号可以迅速到达像素电极。结果，提高了X射线平板检测器的量子检测效率和灵敏度。

9. 发明公开

US20240334762A1 ORGANIC ELECTROLUMINESCENT DISPLAY SUBSTRATE AND MANUFACTURING METHOD, DISPLAY PANEL AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20240334762A1
公开(公告)日：2024-10-03
申请号：US18741629
申请日：2024-06-12
申请人： BOE Technology Group Co., Ltd.
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Xue LIU
IPC分类号： H10K59/13 , H10K59/12 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00
CPC分类号： H10K59/13 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/1201
摘要： An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

10. 发明公开

US20240274674A1 THIN FILM TRANSISTOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20240274674A1
公开(公告)日：2024-08-15
申请号：US18021778
申请日：2022-03-31
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Niangi YAO , Kun ZHAO , Feifei LI
IPC分类号： H01L29/417 , H01L29/423
CPC分类号： H01L29/41733 , H01L29/42384
摘要： Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

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