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    • 2. 发明申请
    • LOW COST, ACTIVE ANTENNA ARRAYS
    • 低成本,主动天线阵列
    • WO2012003276A1
    • 2012-01-05
    • PCT/US2011/042527
    • 2011-06-30
    • BLUE DANUBE LABS, INC.BANU, MihaiFENG, YipingPRODANOV, Vladimir, Ivanov
    • BANU, MihaiFENG, YipingPRODANOV, Vladimir, Ivanov
    • H01Q3/26H04B7/08
    • H04B7/0682H01Q3/26
    • A transmitter system including: a bidirectional signaling (BDS) network having first and second networks for carrying first and second carrier signals, and having a set of n phase synchronous location pairs (a i , b i ),; and also including tunable transmitter circuits for driving an antenna array, each tunable transmitter circuit having an output line for carrying an output signal and first and second input lines electrically connected to the first and second networks of the BDS network at locations of a corresponding one of the set of phase synchronous location pairs, and including a multiplier having a first input electrically connected to the first input line of that tunable transmitter circuit; a phase setting circuit electrically connected to the multiplier for controlling the phase of the output signal of that tunable transmitter circuit; and an amplitude setting circuit for controlling the amplitude of the output signal of that tunable transmitter circuit.
    • 一种发射机系统,包括:双向信令(BDS)网络,具有用于承载第一和第二载波信号的第一和第二网络,并且具有一组n相同步位置对(ai,bi); 并且还包括用于驱动天线阵列的可调谐发射器电路,每个可调谐发射器电路具有用于承载输出信号的输出线和在BDS网络的相应一个的位置处电连接到BDS网络的第一和第二网络的第一和第二输入线 所述相位同步位置对的集合,并且包括具有电连接到所述可调谐发射器电路的第一输入线的第一输入的乘法器; 电连接到乘法器的相位设置电路,用于控制可调谐发射器电路的输出信号的相位; 以及用于控制该可调谐发射机电路的输出信号的振幅的幅度设定电路。
    • 6. 发明申请
    • TEST PADS, METHODS AND SYSTEMS FOR MEASURING PROPERTIES OF A WAFER, AND SYSTEMS AND METHODS FOR CONTROLLING DEPOSITION OF A CHARGE ON A WAFER FOR MEASUREMENT OF ONE OR MORE ELECTRICAL PROPERTIES OF THE WAFER
    • 用于测量波形特性的测试垫,方法和系统,以及用于控制在波形上沉积电荷以测量一个或更多个电流特性的系统和方法
    • WO2007022538A2
    • 2007-02-22
    • PCT/US2006/032822
    • 2006-08-21
    • KLA-TENCOR TECHNOLOGIES CORPORATIONSHI, JianouZHANG, XiafangPEI, ShiyouHUANG, Shu, ChunYEH, DennisRZEPIELA, Jeffrey, A.FENG, YipingKHAN, AhmadKAGAN, AlexanderEDELSTEIN, Sergio
    • SHI, JianouZHANG, XiafangPEI, ShiyouHUANG, Shu, ChunYEH, DennisRZEPIELA, Jeffrey, A.FENG, YipingKHAN, AhmadKAGAN, AlexanderEDELSTEIN, Sergio
    • G01R31/26
    • G01R31/2831G01R31/2856H01L22/34H01L2924/0002H01L2924/00
    • Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties. In addition, systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
    • 提供了用于测量晶片性能的测试垫,方法和系统。 形成在晶片上的一个测试焊盘包括测试结构,其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性,并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。 此外,提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源,其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。