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    • 7. 发明申请
    • METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    • 用于生产有机场效应晶体管的方法
    • WO2007128774A1
    • 2007-11-15
    • PCT/EP2007/054307
    • 2007-05-03
    • BASF AKTIENGESELLSCHAFTTHE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITYKÖNEMANN, MartinERK, PeterLING, Mang-MangBAO, Zhenan
    • KÖNEMANN, MartinERK, PeterLING, Mang-MangBAO, Zhenan
    • H01L51/00H01L51/05
    • H01L51/0053C07D471/06C07D471/16C07D493/06H01L27/283H01L51/0545H01L51/0558
    • A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula (I) wherein R 1 , R 2 , R 3 and R 4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y 1 is O or NR a , wherein R a is hydrogen or an organyl residue, Y 2 is O or NR b , wherein R b is hydrogen or an organyl residue, Z 1 , Z 2 , Z 3 and Z 4 are O, where, in the case that Y 1 is NR a , one of the residues Z 1 and Z 2 may be a NR c group, where R a and R c together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y 2 is NR b , one of the residues Z 3 and Z 4 may be a NR d group, where R b and R d together are a bridging group having 2 to 5 atoms between the terminal bonds.
    • 一种制造有机场效应晶体管的方法,包括以下步骤:a)提供包括位于所述衬底上的栅极结构,源电极和漏极的衬底,以及b)将n型有机半导体化合物施加到 栅极结构,源电极和漏电极所在的衬底区域,其中n型有机半导体化合物选自式(I)化合物,其中R 1, R 2,R 3,R 3和R 4独立地是氢,氯或溴,条件是这些基团中的至少一个 不是氢,Y 1是O或NR a,其中R a是氢或有机残基,Y 2, SUP>是O或NR b,其中R b是氢或有机残基,Z 1,Z 2,..., >,Z 3和Z 4是O,其中,在Y 1的情况下, 残基Z 1和Z 2中的一个可以是NR a C n基团,其中R a和R 2都是 一起是在末端键之间具有2至5个原子的桥连基团,其中在Y 2是NR B的情况下,一个 的残基Z 3和Z 4可以是NR d D基团,其中R b和R SUP > d 一起是在末端键之间具有2至5个原子的桥连基团。