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1. 发明申请

WO2015004596A1 THE USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS IN FORMULATIONS FOR PHOTO MASK CLEANING 审中-公开
标题翻译：具有至少三个短链全氟代基团的表面活性剂在照相胶片清洁配方中的应用
公开(公告)号：WO2015004596A1
公开(公告)日：2015-01-15
申请号：PCT/IB2014/062938
申请日：2014-07-08
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED
发明人： KLIPP, Andreas , HONCIUC, Andrei , YANG, Chu-Ya
IPC分类号： C11D1/00 , H01L21/027
CPC分类号： G03F1/82 , C11D1/004 , G03F1/22 , G03F1/24 , G03F1/68 , G03F7/20 , G03F7/32
摘要： The use of surfactants A, a1% by weight, aqueous solutions of which exhibit a static surface tension
摘要翻译：使用表面活性剂A，a1重量％的水溶液表现出静态表面张力<25mN / m，所述表面活性剂A含有至少三个短链全氟化基团，Rf选自三氟甲基，五氟乙基， 1-七氟丙基，2-七氟丙基和五氟硫烷，用于清洁具有包含图案的图案的光掩模，其最小线空间尺寸小于200nm。通过使用包含表面活性剂A的掩模清洁溶液，增加的颗粒去除效率，更广泛的物理力处理过程窗口观察到阴霾缺陷，无水印，无CD损失。

2. 发明申请

WO2014013396A3 COMPOSITION FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES 审中-公开
公开(公告)号：WO2014013396A3
公开(公告)日：2014-01-23
申请号：PCT/IB2013/055728
申请日：2013-07-12
申请人： BASF SE , BASF SCHWEIZ AG , BASF (CHINA) COMPANY LIMITED
发明人： KLIPP, Andreas , HONCIUC, Andrei , MONTERO PANCERA, Sabrina , BAAN, Zoltan
IPC分类号： G03F7/42 , C11D3/26
摘要： A composition comprising a quaternary ammonium compound for developing photoresists applied to semiconductor substrates is provided. A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices is also provided. The pattern collapse can be avoided by prevent swelling of the photoresist by using the improved composition.

3. 发明申请

WO2014091363A1 USE OF COMPOSITIONS COMPRISING A SURFACTANT AND A HYDROPHOBIZER FOR AVOIDING ANTI PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW 审中-公开
标题翻译：使用包含表面活性剂和疏水剂的组合物，用于避免在50nm或以下的线空间处理图案的材料时避免图案皱褶
公开(公告)号：WO2014091363A1
公开(公告)日：2014-06-19
申请号：PCT/IB2013/060616
申请日：2013-12-04
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED
发明人： KLIPP, Andreas , HONCIUC, Andrei , OETTER, Günter , BITTNER, Christian
IPC分类号： H01L21/027
CPC分类号： G03F7/422 , C11D1/835 , C11D1/94 , C11D11/0047 , G03F7/2041 , G03F7/405 , H01L21/02057 , H01L21/0273
摘要： Provided is use of an aqueous composition comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below. Said composition comprising at least one non-ionic surfactant A and at least one hydrophobizer B, wherein the at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration, and the hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5 -95° compared to the contact angle of water to the substrate before such contacting.
摘要翻译：本发明提供使用包含表面活性剂和疏水化剂的水性组合物，用于在线空间尺寸为50nm或以下时处理图案化材料时避免抗图案塌陷。所述组合物包含至少一种非离子表面活性剂A和至少一种疏水化剂B，其中所述至少一种表面活性剂A具有10mN / m至35mN / m的平衡表面张力，其由至少一种选择临界胶束浓度的水中的表面活性剂A，并且选择疏水化剂B，使得与接触相比，使底物与疏水化剂B在水中的溶液接触5 -95度，使水与基底的接触角增加在接触之前，水与基材的角度。

4. 发明申请

WO2014009847A1 COMPOSITIONS FOR ANTI PATTERN COLLAPSE TREATMENT COMPRISING GEMINI ADDITIVES 审中-公开
标题翻译：用于包含GEMINI添加剂的抗皱纹治疗组合物
公开(公告)号：WO2014009847A1
公开(公告)日：2014-01-16
申请号：PCT/IB2013/055392
申请日：2013-07-01
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , BASF SCHWEIZ AG
发明人： KLIPP, Andreas , HONCIUC, Andrei , OETTER, Günter , BITTNER, Christian
IPC分类号： G03F7/32 , C11D1/40
CPC分类号： C11D11/0047 , C11D1/008 , C11D1/40 , C11D1/62 , G03F7/2041 , G03F7/322 , G03F7/40
摘要： The use of a Gemini additive in compositions for treating semiconductor substrates is provided. The compositions are useful in processes for manufacturing integrated circuits devices, optical devices, micromachines and mechanical precision devices, in particular for developing photoresists and post etch residue removal to avoid pattern collapse.
摘要翻译：提供了用于处理半导体衬底的组合物中使用双子座添加剂。组合物可用于制造集成电路器件，光学器件，微机械和机械精密器件的工艺，特别是用于显影光致抗蚀剂和后蚀刻残留物去除以避免图案崩溃。

5. 发明申请

WO2012127342A1 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES HAVING PATTERNED MATERIAL LAYERS WITH LINE-SPACE DIMENSIONS OF 50 NM AND LESS 审中-公开
标题翻译：用于制造集成电路装置的方法，光学装置，微型计算机和机械精密装置，具有50纳米的空间尺寸的图案材料层和较小的材料层
公开(公告)号：WO2012127342A1
公开(公告)日：2012-09-27
申请号：PCT/IB2012/050946
申请日：2012-02-29
申请人： BASF SE , BASF (CHINA) COMPANY LIMITED , KLIPP, Andreas , OETTER, Günter , MONTERO PANCERA, Sabrina , HONCIUC, Andrei , BITTNER, Christian
发明人： KLIPP, Andreas , OETTER, Günter , MONTERO PANCERA, Sabrina , HONCIUC, Andrei , BITTNER, Christian
IPC分类号： G03F7/20 , C11D1/00
CPC分类号： H01L21/3083 , G03F7/2041 , G03F7/322 , G03F7/405
摘要： A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.
摘要翻译：一种用于制造集成电路器件，光学器件，微机械和机械精密器件的方法，所述方法包括以下步骤：（1）提供具有线空间尺寸为50nm以下且具有> 2的纵横比的图案化材料层的衬底 ; （2）通过使衬底与含有至少一种具有至少一个阳离子的至少一种无氟阳离子表面活性剂A的含水无氟溶液S接触至少一次来提供正电荷或负电荷的表面，或潜在的阳离子基团，至少一种具有至少一个阴离子或潜在阴离子基团的至少一种无氟阴离子表面活性剂A或至少一种无氟两性表面活性剂A; 和（3）从与基板的接触中除去无水的无水溶液S.

6. 发明申请

WO2017009068A1 DEFECT REDUCTION RINSE SOLUTION CONTAINING AMMONIUM SALTS OF SULFOESTERS 审中-公开
标题翻译：含有硫酸钠的缺陷减少溶液
公开(公告)号：WO2017009068A1
公开(公告)日：2017-01-19
申请号：PCT/EP2016/065474
申请日：2016-07-01
申请人： BASF SE
发明人： BITTNER, Christian , OETTER, Guenter , HONCIUC, Andrei , KLIPP, Andreas , BRAUN, Simon
IPC分类号： C11D1/12 , C11D11/00 , G03F7/42 , H01L21/02
CPC分类号： C11D11/0047 , C11D1/123 , G03F7/40 , G03F7/425 , G03F7/426
摘要： The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.
摘要翻译：本发明涉及包含一种或多种选自下组的一种或多种化合物的组合物的组合物的用途：磺基丁二酸二酯，（磺甲基） - 丁二酸二酯，甲基 - 磺基丁二酸二酯，磺基戊二酸二酯和磺基三球酸酸三酯，用于清洗或漂洗包含基材的产品，并在其上支撑具有线宽为50nm的线间距结构的图案化材料层及以下。本发明还涉及一种制造包括基底并在其上被支撑在其上的具有线宽为50nm或更小的线空间结构的图案化材料层的清洁或冲洗产品的相应方法。本发明还涉及HAZEN值低于1000的颜色和/或0.08至10NTU范围内的浊度的溶液，其中溶液包含水和一种或多种铵盐和任选的一种或多种有机溶剂化合物。本发明还涉及制备相应溶液的方法。

7. 发明公开

EP3033408A1 THE USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS IN FORMULATIONS FOR PHOTO MASK CLEANING 有权
标题翻译：表面活性剂至少三个短链全氟组中使用在所述用于清洁光掩膜配方
公开(公告)号：EP3033408A1
公开(公告)日：2016-06-22
申请号：EP14822568.3
申请日：2014-07-08
申请人： BASF SE
发明人： KLIPP, Andreas , HONCIUC, Andrei , YANG, Chu-Ya
IPC分类号： C11D1/00 , H01L21/027
CPC分类号： G03F1/82 , C11D1/004 , G03F1/22 , G03F1/24 , G03F1/68 , G03F7/20 , G03F7/32
摘要： The use of surfactants A, a 1% by weight, aqueous solutions of which exhibit a static surface tension
摘要翻译：使用表面活性剂A，由1重量％，米其表现出的wässrige解决方案的静态表面张力<25个MN /时，所说的表面活性选自含至少三个短链全氟化基团RF由......组成三氟甲基，五氟乙基，1-七氟丙基，2-七氟丙基，和五氟硫烷基为清洁具有用于制造半导体衬底，通过使用掩模的清洁溶液包含表面活性剂甲纳米包括具有低于60最小线间距尺寸的图案的图案的光掩模。增加的颗粒去除效率，更宽的工艺窗口物理治疗力，无雾的缺陷，无水纹，无CD损失进行观察。

8. 发明公开

EP2686737A1 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES HAVING PATTERNED MATERIAL LAYERS WITH LINE-SPACE DIMENSIONS OF 50 NM AND LESS 审中-公开
标题翻译：方法的集成电路器件的光学器件，微型机械和机械装置采用精密结构材料层，50纳米或更小尺寸领先
公开(公告)号：EP2686737A1
公开(公告)日：2014-01-22
申请号：EP12761512.8
申请日：2012-02-29
申请人： BASF SE
发明人： KLIPP, Andreas , OETTER, Günter , MONTERO PANCERA, Sabrina , HONCIUC, Andrei , BITTNER, Christian
IPC分类号： G03F7/20 , C11D1/00
CPC分类号： H01L21/3083 , G03F7/2041 , G03F7/322 , G03F7/405
摘要： A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.

9. 发明授权

EP3033408B1 THE USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS IN FORMULATIONS FOR PHOTO MASK CLEANING 有权
公开(公告)号：EP3033408B1
公开(公告)日：2020-01-22
申请号：EP14822568.3
申请日：2014-07-08
申请人： BASF SE
发明人： KLIPP, Andreas , HONCIUC, Andrei , YANG, Chu-Ya
IPC分类号： G03F1/68 , G03F1/82 , G03F7/32 , G03F7/00

10. 发明公开

EP2932525A1 USE OF COMPOSITIONS COMPRISING A SURFACTANT AND A HYDROPHOBIZER FOR AVOIDING ANTI PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW 有权
标题翻译：用表面活性剂和疏化合物的用途，手段来减少结构倒塌的危险结构性材料处理为50nm或更小尺寸领先
公开(公告)号：EP2932525A1
公开(公告)日：2015-10-21
申请号：EP13861597.6
申请日：2013-12-04
申请人： BASF SE
发明人： KLIPP, Andreas , HONCIUC, Andrei , OETTER, Günter , BITTNER, Christian
IPC分类号： H01L21/027
CPC分类号： G03F7/422 , C11D1/835 , C11D1/94 , C11D11/0047 , G03F7/2041 , G03F7/405 , H01L21/02057 , H01L21/0273
摘要： Provided is use of an aqueous composition comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below. Said composition comprising at least one non-ionic surfactant A and at least one hydrophobizer B, wherein the at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration, and the hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5 -95° compared to the contact angle of water to the substrate before such contacting.

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