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    • 4. 发明专利
    • PHOTOVOLTAIC CELL
    • AU8474575A
    • 1977-03-17
    • AU8474575
    • 1975-09-11
    • BALDWIN CO D H
    • JORDAN JOHN FLAMPKIN CURTIS M
    • C03C17/34H01L21/00H01L31/0336H01L31/06H01L31/18B05D1/02B05D1/36H01L21/363
    • A method of making low cost photovoltaic cells on a large scale basis by means of a continuous process of coating sheet glass while the sheet glass moves in and has its under surface immersed in a tank of molten material, comprising forming the film of CdS microcrystals on the glass sheet, which has previously been coated with transparent SnOx to a thickness of about 0.3 to 0.6 microns. A water solution of a cadmium salt, a sulphur compound, and an aluminum containing soluble compound is intermittenty sprayed on said glass while its exposed surface is maintained at a constant temperature in the range 500 DEG F to 1100 DEG F and while irradiating the surface with intense ultraviolet light so as to form a film of CdS microcrystals. This CdS film has Al impregnated within the stratum of the film adjacent to the SnOx, but only optionally has Al impregnated in the stratum of the CdS film adjacent to the exposed surface of the CdS film. After the spray process is completed, the temperature of the sheet of glass is brought to the range 450 DEG C to 550 DEG C, 525 DEG being optium. After heating, the glass is cooled to approximately room temperature and the exposed surface of the CdS is converted to CuxS, the x of CuxS being as close to 2 as possible, by dipping the coated glass in a solution comprising: a solvent, which may be water; a weak acid, such as tartaric acid, citric acid, or lactic acid; a copper containing compound; and, optionally, a quantity of H2Ce(SO4)4 and NaCl, or some other chloride; or by electroplating to form a film of CuxS; or, by a combination of dipping and electroplating. The CuxS forming process proceeds by ion exchange, i.e., S from CdS combines with Cu to form CuxS. Cu is then applied over the CuxS, and the cell is cured at a temperature in the range 400 DEG F to 500 DEG F.
    • 5. 发明专利
    • DE2542194A1
    • 1976-04-01
    • DE2542194
    • 1975-09-22
    • BALDWIN CO D H
    • JORDAN JOHN FLAMPKIN CURTIS M
    • C03C17/34H01L21/00H01L31/0336H01L31/18
    • A method of making low cost photovoltaic cells on a large scale basis by means of a continuous process of coating sheet glass while the sheet glass moves in and has its under surface immersed in a tank of molten material, comprising forming the film of CdS microcrystals on the glass sheet, which has previously been coated with transparent SnOx to a thickness of about 0.3 to 0.6 microns. A water solution of a cadmium salt, a sulphur compound, and an aluminum containing soluble compound is intermittenty sprayed on said glass while its exposed surface is maintained at a constant temperature in the range 500 DEG F to 1100 DEG F and while irradiating the surface with intense ultraviolet light so as to form a film of CdS microcrystals. This CdS film has Al impregnated within the stratum of the film adjacent to the SnOx, but only optionally has Al impregnated in the stratum of the CdS film adjacent to the exposed surface of the CdS film. After the spray process is completed, the temperature of the sheet of glass is brought to the range 450 DEG C to 550 DEG C, 525 DEG being optium. After heating, the glass is cooled to approximately room temperature and the exposed surface of the CdS is converted to CuxS, the x of CuxS being as close to 2 as possible, by dipping the coated glass in a solution comprising: a solvent, which may be water; a weak acid, such as tartaric acid, citric acid, or lactic acid; a copper containing compound; and, optionally, a quantity of H2Ce(SO4)4 and NaCl, or some other chloride; or by electroplating to form a film of CuxS; or, by a combination of dipping and electroplating. The CuxS forming process proceeds by ion exchange, i.e., S from CdS combines with Cu to form CuxS. Cu is then applied over the CuxS, and the cell is cured at a temperature in the range 400 DEG F to 500 DEG F.
    • 7. 发明专利
    • DE2621920A1
    • 1977-05-18
    • DE2621920
    • 1976-05-17
    • BALDWIN CO D H
    • JORDAN JOHN FLAMPKIN CURTIS M
    • H01L31/04H01L31/0336H01L31/18
    • A photovoltaic cell having an electrically conductive substrate, which may be glass having a film of conductive tin oxide; a first layer containing a suitable semiconductor, which layer has a first component film with an amorphous structure and a second component film with a polycrystalline structure; a second layer forming a heterojunction with the first layer; and suitable electrodes where the heterojunction is formed from a solution containing copper, the amorphous film component is superposed above an electrically conductive substrate to resist permeation of the copper-containing material to shorting electrical contact with the substrate. The penetration resistant amorphous layer permits a variety of processes to be used in forming the heterojunction with even very thin layers (1-6 mu thick) of underlying polycrystalline semi-conductor materials. In some embodiments, the amorphous-like structure may be formed by the addition of aluminum or zirconium compounds to a solution of cadmium salts sprayed over a heated substrate.