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1. 发明申请

WO2013066466A2 LOW VOLTAGE HIGH EFFICIENCY GALLIUM ARSENIDE POWER AMPLIFIER 审中-公开
标题翻译：低电压高效率砷化镓功率放大器
公开(公告)号：WO2013066466A2
公开(公告)日：2013-05-10
申请号：PCT/US2012050499
申请日：2012-08-12
申请人： BAE SYSTEMS INTEGRATION AND ELECTRONIC SYSTEMS INTEGRATION INC , DUGAS DOUGLAS M , LENDER ROBERT J JR
发明人： DUGAS DOUGLAS M , LENDER ROBERT J JR
CPC分类号： H03F3/21 , H03F3/191 , H03F3/195 , H03F3/245
摘要： A low voltage, switch mode PHEMT power amplifier with a 0.1 mum gate length and a low loss, lumped element, output matching circuit is disclosed that provides high performance over a frequency range of 1.4 GHz - 2.5 GHz. The amplifier makes use of monolithic circuit technology for the first stage and output transistor, and uses a printed circuit board with surface mount components for the output matching network. The power output of the power amplifier is stable over a range of 60 degrees centigrade, has high power efficiencies of 44 - 53% with greater than 2 watts output power over the frequency range of 1.4 GHz and 2.5 GHz. In addition, through drain voltage control, the output power can be varied over a wide range between about 0.8 to 2.5 watts while still maintaining a high efficiency in the range of 50 ± 3%.
摘要翻译：公开了一种低电压开关模式PHEMT功率放大器，其具有0.1mum的栅极长度和低损耗的集总元件输出匹配电路，其在1.4GHz-2.5GHz的频率范围内提供高性能。放大器利用单片电路技术用于第一级和输出晶体管，并使用带表面贴装元件的印刷电路板用于输出匹配网络。功率放大器的功率输出在60摄氏度范围内保持稳定，具有44-53％的高功率效率，在1.4GHz和2.5GHz的频率范围内具有大于2瓦的输出功率。另外，通过漏极电压控制，输出功率可以在大约0.8至2.5瓦的宽范围内变化，同时仍保持50±3％范围内的高效率。

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