专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2018140012A1 IMAGING ARRAY WITH EXTENDED DYNAMIC RANGE 审中-公开
公开(公告)号：WO2018140012A1
公开(公告)日：2018-08-02
申请号：PCT/US2017/014976
申请日：2017-01-25
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , MCGRATH, R., Daniel
IPC分类号： G06T5/00 , H04N5/355 , H04N5/335 , H04N19/98
摘要： An imaging array and method for using the same are disclosed The imaging array includes a plurality of pixel sensors connected to a bit line, each pixel sensor includes a photodetector that includes a photodiode, a floating diffusion node, and a buffer connected to the floating diffusion node that produces a pixel output signal having a voltage that is a monotonic function of a voltage on the floating diffusion node. Each pixel sensor also include an overflow capacitor connected to the photodiode by an overflow transfer gate that allows photocharge in excess of a predetermined charge to flow onto the overflow capacitor. The charge accumulated on the photodiode and the overflow capacitor are combined to provide an improved dynamic range for the pixel sensors.

2. 发明申请

WO2020086287A1 ULTRA-HIGH DYNAMIC RANGE CMOS SENSOR 审中-公开
公开(公告)号：WO2020086287A1
公开(公告)日：2020-04-30
申请号：PCT/US2019/055625
申请日：2019-10-10
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , GONG, Chenguang , LIM, Paul, G. , MAGNANI, Albert, M.
IPC分类号： H04N5/235 , H04N5/374 , H04N5/355 , H04N5/378
摘要： An imaging array having a plurality of pixel sensors connected to a bit line is disclosed. Each pixel sensor includes a capacitive overflow pixel sensor characterized by an overflow capacitor having a switching terminal, and a floating diffusion node, a buffer amplifier that connects the floating diffusion node to a bit line in response to row select signal, and a switch that connects the switching terminal to either ground or a boost voltage. The imaging array also includes a switch controller that controls the switch and is connected to the bit line, the switch controller determining a voltage on the bit line, the switch controller connecting the switching terminal to the boost voltage during an exposure of the pixel sensor to light and to either ground or the boost voltage during a readout of charge stored on the overflow capacitor depending on the voltage on the bit line.

3. 发明申请

WO2017147034A1 IMPROVED ULTRA-HIGH DYNAMIC RANGE PIXEL ARCHITECTURE 审中-公开
标题翻译：改进的超高动态范围像素体系结构
公开(公告)号：WO2017147034A1
公开(公告)日：2017-08-31
申请号：PCT/US2017/018622
申请日：2017-02-21
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , MAGNANI, Alberto, M. , MCGRATH, R., Daniel
IPC分类号： H01L27/146 , H04N5/355 , H04N5/3745 , H04N5/378
CPC分类号： G01J1/4228 , G01J1/46 , H01L27/14603 , H01L27/1461 , H01L27/14614 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H04N5/35545 , H04N5/35563 , H04N5/3592 , H04N5/37457
摘要： A pixel comprises a high-response photodiode that collects photocharge, a first transfer gate that enables the charge to be transferred off the high-response photodiode, completely emptying it onto a low-response photodiode, a second transfer gate enables the charge to be transferred off the low-response photodiode, completely emptying it onto floating, diffusion, a third transfer gate for anti-blooming; the floating diffusion collects the transferred charge creating a change of voltage, a means of resetting the floating diffusion. A source-follower is modulated by the voltage on floating diffusion to control hit-line voltage and column-amplifier output. In examples, photocharge is integrated onto both the high-response photodiode and onto the low-response photodiode, The column readout circuit consists of a column amplifier that uses capacitors to set the amplifier gain, three sampling capacitors used as analog memory and for correlated double sampling, and a comparator that assists in providing the final output.
摘要翻译：像素包括收集光电荷的高响应光电二极管，使电荷能够从高响应光电二极管转移出来的第一传输门，将其完全清空到低响应光电二极管上，第二传输门传输门能够将电荷从低响应光电二极管上传输出去，完全将其清空到浮动的扩散区，第三个传输门用于防止泛光; 浮动扩散收集转移的电荷，产生电压的变化，这是重置浮动扩散的手段。源极跟随器由浮动扩散电压调制，以控制命中线电压和列放大器输出。在例子中，光电荷被集成到高响应光电二极管和低响应光电二极管上。列读出电路由一个使用电容器设置放大器增益的列放大器，三个采样电容器用作模拟存储器和相关双采样和帮助提供最终输出的比较器。

4. 发明申请

WO2015084561A1 VARIABLE GAIN COLUMN AMPLIFIER ADAPTED FOR USE IN IMAGING ARRAYS 审中-公开
标题翻译：可变增益柱放大器适用于成像阵列
公开(公告)号：WO2015084561A1
公开(公告)日：2015-06-11
申请号：PCT/US2014/065431
申请日：2014-11-13
申请人： BAE SYSTEMS IMAGING SOLUTIONS, INC.
发明人： DO, Hung, T. , BARTKOVJAK, Peter , FOWLER, Boyd , MIMS, Stephen, W.
IPC分类号： H04N5/335
CPC分类号： H04N5/23232 , H04N5/357 , H04N5/3575 , H04N5/37455 , H04N5/378
摘要： An imaging sensor using a novel bit line processing circuit, that circuit, and the method of processing the pixel outputs from an image sensor using that processing circuit are disclosed. The image sensor includes an array of pixel sensors, a signal digitizing circuit, and a digitizing controller. Each pixel sensor generates a voltage signal that is a function of a charge on the photodetector in that pixel sensor, and couples that voltage signal to a bit line in response to a first signal. The signal digitizing circuit is connected to the bit line, the digitizing circuit converting the voltage signal to a plurality of output digital values, the output digital values having selectable levels of digitization noise. The digitizing controller generates the level of noise based on the voltage signal. The signal digitizing circuit includes a variable gain amplifier and an ADC having a fixed number of bits.
摘要翻译：公开了一种利用新颖的位线处理电路，该电路以及使用该处理电路从图像传感器处理像素输出的方法的成像传感器。图像传感器包括像素传感器阵列，信号数字化电路和数字化控制器。每个像素传感器产生作为该像素传感器中的光电检测器上的电荷的函数的电压信号，并且响应于第一信号将该电压信号耦合到位线。信号数字化电路连接到位线，数字化电路将电压信号转换为多个输出数字值，输出数字值具有可选择的数字化噪声水平。数字化控制器基于电压信号产生噪声电平。信号数字化电路包括可变增益放大器和具有固定位数的ADC。

5. 发明申请

WO2020214776A1 PIXEL AND IMAGING ARRAY WITH REDUCED DARK CURRENT ADAPTED TO LOW LIGHT IMAGING 审中-公开
公开(公告)号：WO2020214776A1
公开(公告)日：2020-10-22
申请号：PCT/US2020/028457
申请日：2020-04-16
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , GONG, Chenguang , MIMS, Stephen, W. , NGUYEN, Khai
IPC分类号： H01L27/146 , H04N5/378
摘要： A pixel sensor, an imaging array that includes such pixel sensors, and a method for operating an imaging array are disclosed. The pixel sensor includes a transfer gate that connects a photodiode to a floating diffusion node in response to a transfer signal, a reset circuit, and a controller. The reset circuit is adapted to apply either a first potential or a second potential to the floating diffusion node, the second potential being less than the first potential. The controller is configured to cause the reset circuit to apply the first potential to the floating diffusion node while the transfer gate is conducting just prior to a start of an accumulation phase, and then apply the second potential to the floating diffusion node after the transfer gate is rendered non-conducting, the second potential is less than the first potential.

6. 发明申请

WO2018140015A1 BACKSIDE ILLUMINATED GLOBAL SHUTTER IMAGING ARRAY 审中-公开
公开(公告)号：WO2018140015A1
公开(公告)日：2018-08-02
申请号：PCT/US2017/014983
申请日：2017-01-25
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , GONG, Chenguang , MAGNANI, Albert, M.
IPC分类号： H04N5/3745 , H04N5/361
摘要： An imaging array and method for using the same that are adapted for backside illuminated imaging arrays utilizing a global shutter are disclosed. The imaging array includes a plurality of pixel sensors having an ordered array of pixel sensors. Each pixel sensor includes a main photodiode and a correction photodiode. A controller resets all of the main photodiodes at a first time that is the same for all of the pixel sensors, resets all of the correction photodiodes at a second time that is the same for all of the pixel sensors after the first time, and sequentially reads out the pixel sensors. The pixel sensor is read out at a third time that is different for different ones of the pixel sensors. A correction charge is measured that corrects for the different readout times.

7. 发明申请

WO2018118016A1 GLOBAL SHUTTER SCHEME THAT REDUCES THE EFFECTS OF DARK CURRENT 审中-公开
公开(公告)号：WO2018118016A1
公开(公告)日：2018-06-28
申请号：PCT/US2016/067618
申请日：2016-12-19
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , LIM, Paul, G. , MIMS, Stephen, W.
IPC分类号： H04N5/341 , H04N5/353 , H04N5/359 , H04N5/361 , H04N5/374 , H04N5/3745
摘要： An imaging array having a plurality of pixel sensors connected to a bit line is disclosed. Each pixel sensor includes a first photodetector having a photodiode, a floating diffusion node, and an amplifier. The floating diffusion node is characterized by a parasitic photodiode and parasitic capacitance. The amplifier amplifies a voltage on the floating diffusion node to produce a signal on an amplifier output. The first photodetector also includes a bit line gate that connects the amplifier output to the bit line in response to a row select signal and a voltage dividing capacitor having a first terminal connected to the floating diffusion node and a second terminal connected to a drive source that switches a voltage on the second terminal between a drive potential different from ground and ground in response to a drive control signal.

8. 发明申请

WO2021118912A1 SMALL PIXEL HIGH DYNAMIC RANGE PIXEL SENSOR 审中-公开
公开(公告)号：WO2021118912A1
公开(公告)日：2021-06-17
申请号：PCT/US2020/063557
申请日：2020-12-07
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , GONG, Chenguang , LIM, Paul, G. , MAGNANI, Alberto, M.
IPC分类号： H04N5/374 , H01L27/146 , H04N3/10 , H04N5/10 , H04N5/3745 , H04N5/378
摘要： An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.

9. 发明申请

WO2019005070A1 ULTRA-LOW NOISE AMPLIFIER ADAPTED FOR CMOS IMAGING SENSORS 审中-公开
公开(公告)号：WO2019005070A1
公开(公告)日：2019-01-03
申请号：PCT/US2017/039993
申请日：2017-06-29
申请人： BAE SYSTEMS IMAGING SOLUTIONS INC.
发明人： DO, Hung, T. , GONG, Chenguang , MAGNANI, Alberto, M.
IPC分类号： H04N5/3745 , H03F3/08 , H03F3/16 , H03F3/213 , H04N5/357 , H04N5/378
摘要： A low-noise amplifier is disclosed. The amplifier includes a signal amplifier having an amplifier signal output, a first filter capacitor, a buffer amplifier having a buffer amplifier input and a buffer amplifier output; and a switching network. The first filter capacitor has first and second terminals. The second terminal is connected to a power rail. The amplifier signal output is connected to the buffer amplifier input by a first direct current path and the buffer amplifier output to the first terminal of the first filter capacitor by a second direct current path during a first time period. The amplifier signal output is connected directly to the first terminal of the first filter capacitor by a third direct current path during a second time period, and the amplifier signal output to the first terminal of the first filter capacitor through a resistor during a third time period.

10. 发明申请

WO2015038336A1 AMPLIFIER ADAPTED FOR CMOS IMAGING SENSORS 审中-公开
标题翻译：适用于CMOS成像传感器的放大器
公开(公告)号：WO2015038336A1
公开(公告)日：2015-03-19
申请号：PCT/US2014/052865
申请日：2014-08-27
申请人： BAE SYSTEMS IMAGING SOLUTIONS, INC.
发明人： FOWLER, Boyd , DO, Hung, T. , LIU, Xinqiao
IPC分类号： H03F3/213
CPC分类号： H04N5/3745 , H03F3/082 , H03F3/16 , H04N5/357 , H04N5/378
摘要： A column, readout amplifier and imaging array using the same method are disclosed, The column readout amplifier includes a signal amplifier having an amplifier signal output, a first, filter capacitor, a buffer amplifier having a buffer amplifier input and a buffer amplifier output and a switching network. The switching network connects the amplifier signal output to the buffer amplifier input and the buffer amplifier output to the first filter capacitor during a first rime period, and connects the amplifier signal output directly to the first filter capacitor during a second time period. The time periods can be of fixed duration or determined by the difference in potential between the input and output, of the buffer amplifier. The column readout amplifier can be used in an imaging array to readout columns of pixels.
摘要翻译：列读出放大器和使用相同方法的成像阵列被公开。列读出放大器包括具有放大器信号输出的信号放大器，第一滤波电容器，具有缓冲放大器输入和缓冲放大器输出的缓冲放大器和交换网络。开关网络在第一时间段期间将放大器信号输出连接到缓冲放大器输入端和缓冲放大器输出到第一滤波电容器，并且在第二时间段期间将放大器信号输出直接连接到第一滤波电容器。时间段可以是固定持续时间，或由缓冲放大器的输入和输出之间的电位差决定。列读出放大器可用于成像阵列中以读出像素列。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式