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1. 发明申请

US20090149005A1 METHOD FOR MAKING A DISMOUNTABLE SUBSTRATE 有权
标题翻译：制造不合格基材的方法
公开(公告)号：US20090149005A1
公开(公告)日：2009-06-11
申请号：US11719834
申请日：2005-11-25
申请人： Aurelie Tauzin , Chrystelle Lagahe-Blanchard
发明人： Aurelie Tauzin , Chrystelle Lagahe-Blanchard
IPC分类号： H01L21/00 , H01L21/31 , H01L21/36
CPC分类号： C30B33/02 , C30B25/04 , C30B33/00 , H01L21/02381 , H01L21/02532 , H01L21/02625 , H01L21/02639 , H01L21/02647 , H01L21/02664
摘要： The invention concerns a method for forming a growth mask on the surface of an initial crystalline substrate, comprising the following steps: formation of a layer of second material on one of the faces of the initial substrate of first material, formation of a pattern in the thickness of the layer of second material so as to expose the zones of said face of the initial substrate, said zones forming growth windows on the initial substrate, the method being characterised in that the formation of the pattern is obtained by ion implantation carried out in the surface layer of the initial substrate underlying the layer of second material, the implantation conditions being such that they cause, directly or after a heat treatment, on said face of the initial substrate, the appearance of exfoliated zones of first material leading to the localised removal of the zones of second material covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows on the initial substrate. The invention further concerns methods for forming a crystalline thin film and transferring this thin film onto a host substrate.
摘要翻译：本发明涉及一种用于在初始晶体衬底的表面上形成生长掩模的方法，包括以下步骤：在第一材料的初始衬底的一个面上形成第二材料层，在第一材料的表面形成图案第二材料层的厚度以露出初始衬底的所述面的区域，所述区域在初始衬底上形成生长窗口，该方法的特征在于，通过离子注入在在第二材料层下面的初始衬底的表面层，注入条件使得它们直接或在热处理之后在初始衬底的所述表面上引起导致局部化的第一材料的剥离区域的出现去除覆盖第一材料的剥离区域的第二材料的区域，从而局部暴露初始衬底并形成g 初始底物上的第一个窗口。本发明还涉及形成结晶薄膜并将该薄膜转移到主体衬底上的方法。

2. 发明授权

US08993408B2 Method for detaching a silicon thin film by means of splitting, using triple implantation 有权
标题翻译：使用三重注入法通过分裂分离硅薄膜的方法
公开(公告)号：US08993408B2
公开(公告)日：2015-03-31
申请号：US13390601
申请日：2010-08-25
申请人： Aurelie Tauzin
发明人： Aurelie Tauzin
IPC分类号： H01L21/30 , H01L21/762
CPC分类号： H01L21/76254 , Y10T156/1153
摘要： A process for detaching a silicon thin film from a donor substrate by cleaving, includes implanting species within the donor substrate to form a weak layer. The species are implanted at a depth at least equal to the thickness of the thin film to be detached. There is a heat treatment at 450° C. or more and cleaving is along the weak layer. The implanting species includes implanting boron, helium and hydrogen with implantation energies such that: helium and boron concentration maxima are obtained at substantially the same depth, separated by at most 10 nm; and a hydrogen concentration maximum is obtained at a depth at least 20 nm greater than that of the helium and boron concentration maxima. The implantation dose of boron is at least equal to 5×1013 B/cm2 and the dose of helium and hydrogen is at least 1016 atoms/cm2 and at most 4×1016 atoms/cm2.
摘要翻译：通过切割从施主衬底分离硅薄膜的方法包括在供体衬底内植入物质以形成弱层。该物质以至少等于要分离的薄膜的厚度的深度植入。在450℃以上进行热处理，沿着弱层进行裂解。植入物种包括用注入能量注入硼，氦和氢，使得在基本上相同的深度获得氦和硼的最大浓度，分离至多10nm; 并且在比氦和硼浓度最大值大至少20nm的深度处获得氢浓度最大值。硼的注入剂量至少等于5×1013B / cm2，氦和氢的剂量至少为1016原子/ cm2，最多为4×1016原子/ cm2。

3. 发明授权

US08546238B2 Method for transferring at least one micro-technological layer 有权
标题翻译：用于传送至少一个微技术层的方法
公开(公告)号：US08546238B2
公开(公告)日：2013-10-01
申请号：US13271401
申请日：2011-10-12
申请人： Aurelie Tauzin , Anne-Sophie Stragier
发明人： Aurelie Tauzin , Anne-Sophie Stragier
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/76259
摘要： A method for transferring a micro-technological layer includes preparing a substrate having a porous layer buried beneath a useful surface, forming an embrittled zone between it and the surface, bonding the substrate to a supporting substrate, causing detachment at the porous layer by mechanical stress to obtain a first substrate remnant, and a bare surfaced detached layer joined to the supporting substrate, performing technological steps on the bared surface of the detached layer, bonding the detached layer, by the surface to which the technological steps had been applied, to a second supporting substrate, causing detachment, at the embrittled zone, by heat treatment to obtain a detached layer remnant joined to the second supporting substrate, and the detached layer remnant joined to the first supporting substrate.
摘要翻译：用于转移微技术层的方法包括制备具有埋在有用表面下方的多孔层的基材，在其与表面之间形成脆化区域，将基板粘合到支撑基板上，通过机械应力引起在多孔层处的分离为了获得第一基板残留物和接合到支撑基板的裸露的分离层，在剥离层的裸露表面上进行工艺步骤，通过已经应用了技术步骤的表面将分离层粘合到第二支撑基板，通过热处理在脆化区域引起分离，以获得接合到第二支撑基板的分离层残留物，以及接合到第一支撑基板的分离层残留物。

4. 发明申请

US20090061594A1 METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES 有权
标题翻译：通过熔化沉淀法分离薄膜的方法
公开(公告)号：US20090061594A1
公开(公告)日：2009-03-05
申请号：US12293193
申请日：2007-03-28
申请人： Aurelie Tauzin , Bruce Faure , Arnaud Garnier
发明人： Aurelie Tauzin , Bruce Faure , Arnaud Garnier
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.
摘要翻译：从衬底制造薄膜的方法包括将诸如由非气态物质的离子（例如镓）注入衬底中，例如由硅制成的衬底，根据材料选择植入条件和该物种底物，以便允许形成限定在一定深度内的析出物，分布在层内，这些沉淀物由熔点低于基底的固相制成。所述方法还可包括将基材的该表面与加强件紧密接触，以及通过在沉淀物处于其中的条件下施加机械和/或化学脱离应力而在沉淀层处破碎基板而分离薄膜液相。

5. 发明申请

US20140113434A1 PROCESS FOR FORMING A CRACK IN A MATERIAL 有权
标题翻译：在材料中形成裂纹的方法
公开(公告)号：US20140113434A1
公开(公告)日：2014-04-24
申请号：US14114998
申请日：2012-04-27
申请人： Aurelie Tauzin , Frederic Mazen
发明人： Aurelie Tauzin , Frederic Mazen
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.
摘要翻译：描述了从由相同的半导体材料制成的衬底（20）或施主衬底形成半导体材料层（26）的工艺，包括：在所述施主衬底中形成高锂浓度区（22），与 5×10 18原子/ cm 3和5×1020原子/ cm 3之间的浓度，然后在高锂离子浓度区内的供体衬底中或附近的氢注入（24），加强筋（19）与施主衬底，施加热预算以导致由植入所限定的层（34）的分离。

6. 发明申请

US20120088351A1 METHOD FOR TRANSFERRING AT LEAST ONE MICRO-TECHNOLOGICAL LAYER 有权
标题翻译：用于传输至少一个微技术层的方法
公开(公告)号：US20120088351A1
公开(公告)日：2012-04-12
申请号：US13271401
申请日：2011-10-12
申请人： Aurelie Tauzin , Anne-Sophie Stragier
发明人： Aurelie Tauzin , Anne-Sophie Stragier
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/76259
摘要： A method for transferring a micro-technological layer includes preparing a substrate having a porous layer buried beneath a useful surface, forming an embrittled zone between it and the surface, bonding the substrate to a supporting substrate, causing detachment at the porous layer by mechanical stress to obtain a first substrate remnant, and a bare surfaced detached layer joined to the supporting substrate, performing technological steps on the bared surface of the detached layer, bonding the detached layer, by the surface to which the technological steps had been applied, to a second supporting substrate, causing detachment, at the embrittled zone, by heat treatment to obtain a detached layer remnant joined to the second supporting substrate, and the detached layer remnant joined to the first supporting substrate.
摘要翻译：用于转移微技术层的方法包括制备具有埋在有用表面下方的多孔层的基材，在其与表面之间形成脆化区域，将基板粘合到支撑基板上，通过机械应力引起在多孔层处的分离为了获得第一基板残留物和接合到支撑基板的裸露的分离层，在剥离层的裸露表面上进行工艺步骤，通过已经应用了技术步骤的表面将分离层粘合到第二支撑基板，通过热处理在脆化区域引起分离，以获得接合到第二支撑基板的分离层残留物，以及接合到第一支撑基板的分离层残留物。

7. 发明授权

US09105688B2 Process for forming a crack in a material 有权
标题翻译：在材料中形成裂缝的方法
公开(公告)号：US09105688B2
公开(公告)日：2015-08-11
申请号：US14114998
申请日：2012-04-27
申请人： Aurelie Tauzin , Frederic Mazen
发明人： Aurelie Tauzin , Frederic Mazen
IPC分类号： H01L21/46 , H01L21/762
CPC分类号： H01L21/76254
摘要： A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone (22), with a concentration between 5×1018 atoms/cm3 and 5×1020 atoms/cm3, then a hydrogen implantation (24) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener (19) with the donor substrate, application of a thermal budget to result in the detachment of the layer (34) defined by the implantation.
摘要翻译：描述了从由相同的半导体材料制成的衬底（20）或施主衬底形成半导体材料层（26）的工艺，包括：在所述施主衬底中形成高锂浓度区（22），与 5×10 18原子/ cm 3和5×1020原子/ cm 3之间的浓度，然后在高锂离子浓度区内的供体衬底中或附近的氢注入（24），加强筋（19）与施主衬底，施加热预算以导致由植入所限定的层（34）的分离。

8. 发明申请

US20110076836A1 METHOD FOR THE ULTRASONIC PLANARIZATION OF A SUBSTRATE, FROM ONE SURFACE OF WHICH A BURIED WEAKENED LAYER HAS BEEN UNCOVERED BY FRACTURE 有权
标题翻译：一种基底的超声波平面化方法，一种被破坏的破碎层已被破碎的一个表面
公开(公告)号：US20110076836A1
公开(公告)日：2011-03-31
申请号：US12889180
申请日：2010-09-23
申请人： Aurelie Tauzin
发明人： Aurelie Tauzin
IPC分类号： H01L21/762
CPC分类号： H01L21/02032 , H01L21/76254
摘要： A method for forming a plurality of thin films from a microtechnological donar substrate with a view to recycling of the donor substrate, the method including exposing a face of the donor substrate by fracturing the donor substrate along a layer weakened by implantation and placing the exposed face in a bath and applying ultrasound with a frequency of between 10 kHz and 80 kHz under conditions suitable for causing cavitation along the exposed face. In the case of a silicon donor substrate, the bath is exposed to an ultrasound power per unit volume of greater than 5 W/I, at a power of greater than 10 W with a duration of greater than 1 minute, and at a temperature between 1° C. and 100° C.
摘要翻译：一种用于从微技术的多孔基底形成多个薄膜的方法，其目的是使施主衬底再循环，所述方法包括通过沿植入物削弱的层断裂给体衬底而暴露供体衬底的表面，并将暴露面在适合于沿着暴露的脸部引起气蚀的条件下，以10kHz至80kHz的频率施加超声波。在硅供体衬底的情况下，以大于10W的功率大于10W的功率暴露浴，每单位体积的超声功率大于5W / I，持续时间大于1分钟，并且在 1°C和100°C

9. 发明申请

US20060083280A1 Method for producing multilayers on a substrate 审中-公开
标题翻译：在基板上制造多层的方法
公开(公告)号：US20060083280A1
公开(公告)日：2006-04-20
申请号：US11247268
申请日：2005-10-12
申请人： Aurelie Tauzin , Philippe Gilet
发明人： Aurelie Tauzin , Philippe Gilet
IPC分类号： H01S5/00
CPC分类号： H01L21/76254
摘要： The invention relates to a method for producing a multilayer on a receiving substrate, including the following steps: the formation of an initial substrate comprising a first material layer formed on the surface of a supporting substrate made of a second material, molecular adhesion bonding of the surface of the initial substrate comprising the first material layer to the bonding surface of a receiving substrate to obtain a bonded structure, partial removal of the initial substrate so as to leave a thin film of said second material on the first material layer, evaporation of the second material thin film with a selective stop on the first material layer, growth of at least one layer from the first material layer bonded to the receiving substrate, with the evaporation step and the growth step being carried out in the same technological apparatus.
摘要翻译：本发明涉及一种用于在接收基板上制造多层的方法，包括以下步骤：初始基底的形成，其包括形成在由第二材料制成的支撑基底的表面上的第一材料层，分子粘合初始衬底的表面包括第一材料层到接收衬底的接合表面以获得接合结构，部分去除初始衬底以便在第一材料层上留下所述第二材料的薄膜，蒸发在第一材料层上具有选择性停止的第二材料薄膜，在相同的技术装置中进行蒸发步骤和生长步骤，从结合到接收基板的第一材料层生长至少一层。

10. 发明申请

US20120138238A1 METHOD FOR DETACHING A SILICON THIN FILM BY MEANS OF SPLITTING, USING TRIPLE IMPLANTATION 有权
标题翻译：通过分割方法分离硅薄膜的方法，使用三重植入
公开(公告)号：US20120138238A1
公开(公告)日：2012-06-07
申请号：US13390601
申请日：2010-08-25
申请人： Aurelie Tauzin
发明人： Aurelie Tauzin
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , Y10T156/1153
摘要： In order to detach a silicon thin film from a starting substrate by splitting, a step of implanting species within the starting substrate (10) through a free surface is carried out in order to form a weakening layer (13), at least one intermediate step at a temperature of at least 450° C. before and/or after an optional securing step for tightly contacting the free surface with a stiffener, and then a detachment step by splitting along the weakening layer. The implantation step comprises implanting boron, helium, and hydrogen in any order at implantation energies such that maximum boron and helium concentrations are obtained substantially at one and the same depth, with a maximum difference of 10 nm, said maximum concentrations being at a shallower level than the maximum hydrogen concentration, and at implantation doses such that the boron dose is at least equal to 5.1013 B/cm2 and the total helium and hydrogen dose is at least equal to 1016 atoms/cm2 and at most equal to 4.1016 atoms/cm2, preferably at most equal to 3.1016 atoms/cm2.
摘要翻译：为了通过分裂从起始衬底分离硅薄膜，进行通过自由表面注入起始衬底（10）内的物质以形成弱化层（13）的步骤，至少一个中间步骤在用于将自由表面与加强件紧密接触的可选固定步骤之前和/或之后的至少450℃的温度下进行，然后通过沿着弱化层分裂的分离步骤。注入步骤包括在注入能量下以任何顺序注入硼，氦和氢，使得基本上在一个和相同的深度获得最大的硼和氦浓度，最大差为10nm，所述最大浓度处于较浅的水平并且在注入剂量下，硼剂量至少等于5.1013B / cm2，总氦和氢剂量至少等于1016原子/ cm2，最多等于4.1016原子/ cm2，优选至多等于3.1016原子/ cm 2。

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