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    • 1. 发明公开
    • Organometallic single source precursors for inorganic films coatings and powders
    • 基于用于无机膜涂层和粉末的制备单一的有机金属化合物前体
    • EP0869103A1
    • 1998-10-07
    • EP98105661.7
    • 1998-03-27
    • Atwood, David Allan
    • Atwood, David Allan
    • C01F7/30C07F5/06
    • C01F7/304C07F5/069C23C26/00
    • The invention is directed to making inorganic materials consisting of a metal and a group 16 element in the stoichiometric ratio of 2:3 from single source precursors having the same 2:3 metal to heteroatom stoichiometric ratio.
      In particular, the invention discloses a process for making aluminum oxide from single source precursors that have an aluminum to oxygen ratio of 2:3. The precursors are organoaluminum tetrametallic compounds containing organooxy bridging groups and organo terminal groups. As these compounds tend to be viscous liquids or oils, they can be applied to a substrate surface then pyrolyzed to eliminate the organic ligands and produce aluminum oxide in situ, without using gas phase deposition techniques.
    • 本发明涉及制备由金属的无机材料和以2的化学计量比16族元素:3从具有相同2单一来源前体:3金属杂原子化学计量比。 特别地,本发明盘松动用于使从铝单一来源前体thathave到的2个氧比氧化铝的方法:3。 该前体是含有有机含氧桥基和有机末端基团的有机铝四金属化合物。 作为合成的化合物往往是粘性液体或油,它们可以应用到一个基底表面然后热解以除去有机配体和原位生产氧化铝,而不使用气相沉积技术。