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1. 发明授权

US07683347B2 Technique for improving ion implantation throughput and dose uniformity 有权
标题翻译：提高离子注入量和剂量均匀性的技术
公开(公告)号：US07683347B2
公开(公告)日：2010-03-23
申请号：US11537050
申请日：2006-09-29
申请人： Atul Gupta , Anthony Renau , Donna Smatlak , Joseph C. Olson
发明人： Atul Gupta , Anthony Renau , Donna Smatlak , Joseph C. Olson
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/302 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.
摘要翻译：公开了一种改善离子注入通量和剂量均匀性的技术。在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

2. 发明授权

US06403972B1 Methods and apparatus for alignment of ion beam systems using beam current sensors 有权
标题翻译：使用光束电流传感器对离子束系统进行对准的方法和装置
公开(公告)号：US06403972B1
公开(公告)日：2002-06-11
申请号：US09349828
申请日：1999-07-08
申请人： Antonella Cucchetti , Leo Vincent Klos, Jr. , Joseph C. Olson , Raymond L. Pelletier , Keith Pierce , Anthony Renau , Donna Smatlak
发明人： Antonella Cucchetti , Leo Vincent Klos, Jr. , Joseph C. Olson , Raymond L. Pelletier , Keith Pierce , Anthony Renau , Donna Smatlak
IPC分类号： H01J3730
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： An ion beam is sensed with a beam current sensor which has a sensing aperture that is smaller than a cross-sectional dimension of the ion beam at the beam current sensor. The sensed ion beam current is indicative of ion beam position relative to a desired ion beam path. The ion beam position may be adjusted if the sensed ion beam position differs from the desired ion beam path. One or more beam current sensors may be utilized in an ion implanter for calibration and/or alignment. The beam current sensor may be utilized to determine a relation between a characteristic of an ion beam, such as magnetic rigidity, and a parameter of a system element, such as magnetic field, required to direct the ion beam along a desired ion beam path.
摘要翻译：用束电流传感器感测离子束，其具有小于束电流传感器处的离子束的横截面尺寸的感测孔径。感测的离子束电流指示相对于期望的离子束路径的离子束位置。如果感测的离子束位置与期望的离子束路径不同，则可以调节离子束位置。用于校准和/或对准的离子注入机中可以使用一个或多个束电流传感器。束电流传感器可以用于确定离子束的特性（例如磁刚性）与系统元件（诸如磁场）的参数之间的关系，以将离子束沿着期望的离子束路径引导。

3. 发明申请

US20080078953A1 TECHNIQUE FOR IMPROVING ION IMPLANTATION THROUGHPUT AND DOSE UNIFORMITY 有权
标题翻译：用于改善离子植入和剂量均匀性的技术
公开(公告)号：US20080078953A1
公开(公告)日：2008-04-03
申请号：US11537050
申请日：2006-09-29
申请人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
发明人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.
摘要翻译：公开了一种改善离子注入通量和剂量均匀性的技术。在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

4. 发明授权

US08461030B2 Apparatus and method for controllably implanting workpieces 有权
公开(公告)号：US08461030B2
公开(公告)日：2013-06-11
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

5. 发明申请

US20110124186A1 APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES 有权
标题翻译：用于控制工件的装置和方法
公开(公告)号：US20110124186A1
公开(公告)日：2011-05-26
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/265 , G21K5/10
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
摘要翻译：等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

6. 发明授权

US07462844B2 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US07462844B2
公开(公告)日：2008-12-09
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

7. 发明授权

US08716682B2 Apparatus and method for multiple slot ion implantation 有权
标题翻译：多槽离子注入的装置和方法
公开(公告)号：US08716682B2
公开(公告)日：2014-05-06
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H05H1/24
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

8. 发明申请

US20120248328A1 APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION 有权
标题翻译：多种植入物的装置和方法
公开(公告)号：US20120248328A1
公开(公告)日：2012-10-04
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H01J3/14 , G21G5/00
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

9. 发明授权

US07459692B2 Electron confinement inside magnet of ion implanter 有权
标题翻译：离子注入机磁体内的电子约束
公开(公告)号：US07459692B2
公开(公告)日：2008-12-02
申请号：US11272193
申请日：2005-11-10
申请人： Anthony Renau , Joseph C. Olson , Shengwu Chang , James Buff
发明人： Anthony Renau , Joseph C. Olson , Shengwu Chang , James Buff
IPC分类号： H01J1/50
CPC分类号： H01J37/1475 , H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/0042 , H01J2237/055
摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
摘要翻译：公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

10. 发明授权

US06573518B1 Bi mode ion implantation with non-parallel ion beams 有权
标题翻译：具有非平行离子束的Bi模式离子注入
公开(公告)号：US06573518B1
公开(公告)日：2003-06-03
申请号：US09699653
申请日：2000-10-30
申请人： Anthony Renau , Joseph C. Olson
发明人： Anthony Renau , Joseph C. Olson
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J2237/24528 , H01J2237/24542
摘要： A method for implanting ions into a workpiece, such as a semiconductor wafer, includes the steps of generating an ion beam, measuring an angle of non-parallelism of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, tilting the wafer at a second angle, and performing a second implant at the second angle. The first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. Preferably, the first and second implants are controlled to provide substantially equal ion doses in the workpiece.
摘要翻译：用于将离子注入到诸如半导体晶片的工件中的方法包括以下步骤：产生离子束，测量离子束的非平行度的角度，以第一角度倾斜晶片，在第一角度，以第二角度倾斜晶片，并且以第二角度执行第二植入。第一和第二角度相对于参考方向的符号相反，并且幅度等于或大于所测量的非平行度的角度。优选地，控制第一和第二植入物以在工件中提供基本相等的离子剂量。

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